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基于温度传感器的柔性电子皮肤研究.docx
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基于温度传感器的柔性电子皮肤研究.docx
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I
摘 要
基于柔性温度传感器的电子皮肤,在可穿戴人类活动监测设备和个人医疗健
康等应用领域中已经得到广泛的关注。但是,目前电子皮肤研究领域在提高设备
稳定性,提高器件灵敏度和降低成本等方面还有诸多挑战有待进一步解决。基于
薄膜晶体管的温度传感器具备良好的可重复性,较高的稳定性和高灵敏度,因此
在电子皮肤领域具备较大的潜力。本文基于薄膜晶体管的工作原理,利用铟镓锌
氧作为器件沟道层材料,选择磁控溅射、旋涂等简单工艺,制备得到温度敏感型
薄膜晶体管传感器件。为了在人工电子皮肤领域开展相应的应用研究,深入探讨
了柔性器件的温度响应特性。本文的主要研究内容如下:
首先,为了制备柔性透明器件,采用磁控溅射和旋涂等简单工艺。器件具备
1.1 V 的工作电压和 2.81×10
7
的开关比。场效应迁移率和亚阈值摆幅分别为 33.5
cm
2
/Vs 和 83.38 mV/dec。该柔性透明器件具备良好的转移特性和输出特性,同时
还具有良好的温度敏感性。柔性透明器件的阈值电压 V
TH
与外界温度具备较强的
相关性,建立了输出特性曲线和温度之间相关性模型。此外,在不同的温度条件
下,不同源极电压(0.5~3.5 V)对器件电学性能的影响程度较小。
其次,测试了柔性透明薄膜晶体管器件的机械柔韧性。在两个弯曲方向和不
同弯曲半径下都实现了良好的转移特性曲线。在向下和向上弯曲的测试平台上,
弯曲半径从 18 mm 变化到 48 mm,阈值电压(V
TH
)分别是从 0.646 V 变化到 0.627
V,从 0.678 V 变化到 0.572 V,结果表明柔性 TFT 具有良好的机械柔韧性。以 5
mm 的半径重复弯曲装置对相同的器件来进行弯曲耐力测试。在 10,000 次弯曲测
试后,其阈值电压 V
TH
也仅从 1.08 V 略微增加到 1.16 V,表明该柔性透明器件具
备良好的器件变形稳定性,在 10,000 次循环之后,依旧可以保持良好的电学性
能。
最后、通过循环偏压测试和能带间缺陷态密度测试,解释柔性透明薄膜晶体
管器件的温度传感机理。当外界温度发生改变,热激发的氧原子引起空位,而且
热激发的氧原子离开初始位置并进入间隙位置,同时在较高温度下由氧空位产生
的自由电子会降低阈值电压 V
TH
,当温度降低时,氧空位和间隙氧原子彼此重新
II
结合,返回到初始的准平衡状态。
关键词:柔性电子皮肤,温度传感器,薄膜晶体管,非晶态氧化铟镓锌
III
ABSTRACT
Electronic skin based on flexible temperature sensor has been widely concerned
in the application fields of wearable human activity monitoring equipment and personal
medical health. However, there are still many challenges to be solved in the field of
electronic skin research, such as improving the stability of the device, improving the
sensitivity of the device and reducing the cost. The temperature sensor based on thin
film transistor has good repeatability, high stability and high sensitivity, so it has great
potential in the field of electronic skin. In this paper, based on the working principle of
the transistors, indium gallium zinc oxide is used as the semiconductor layer material
of the device, and simple processes such as magnetron sputtering and spin coating are
selected to prepare the temperature sensitive amorphous oxide semiconductor thin film
transistor sensor. The temperature response characteristics of the thin film transistor
device are studied, and the corresponding research is carried out in the field of artificial
electronic skin. The main contents of this paper are as follows:
Firstly, in order to produce flexible transparent devices, simple processes such as
magnetron sputtering and spin coating are used. The operating voltage, switch ratio,
field effect mobility and subthreshold swing of the device are 1.1V, 2.81 × 10
7
,
33.5cm
2
/vs and 83.38mv/dec, respectively. The flexible transparent device has good
transfer and output characteristics, as well as good temperature sensitivity. The
threshold voltage V
TH
of the flexible transparent device has a strong correlation with
the external temperature. The correlation model between output characteristic curve
and temperature is established. In addition, under different temperature conditions,
different source voltages (0.5V ~ 3.5V) have little effect on the electrical performance
of the device.
Secondly, the mechanical flexibility of the flexible transparent thin film transistor
is tested. Good transfer characteristic curves are achieved under two bending directions
and different bending radii. On the test platform with downward and upward bending,
the bending radius changes from 18 mm to 48 mm, the threshold voltage (V
TH
) changes
from 0.646 V to 0.627 V, and from 0.678 V to 0.572 V, respectively. The results show
that the flexible TFT has excellent mechanical flexibility. The bending endurance of
the same device was tested with the repeated bending device with a radius of 5 mm.
IV
After 10000 bending tests, the threshold voltage Vth increased slightly from 1.08 V to
1.16 V, indicating that the flexible transparent device has good deformation stability,
and can still maintain good electrical performance after 10000 cycles.
Finally, the temperature sensing mechanism of TFT devices is explained by cyclic
bias test and energy band defect density of state test. When the external temperature
changes, the thermally excited oxygen atom causes the vacancy, and the thermally
excited oxygen atom leaves the initial position and enters the gap position. At the same
time, the free electrons generated by the oxygen vacancy at a higher temperature will
reduce the threshold voltage V
TH
. When the temperature decreases, the oxygen vacancy
and the interstitial oxygen atom recombine with each other and return to the initial quasi
equilibrium state.
Keywords: flexible electronic skin, temperature sensor, thin film transistor, amorphous
indium gallium zinc oxide
V
目 录
摘 要 ..............................................................................................................................I
ABSTRACT ...............................................................................................................III
第一章 绪论..................................................................................................................1
1.1 研究背景..................................................................................................1
1.1.1 基于压力传感器的人工电子皮肤.................................................3
1.1.2 基于拉伸/应变传感器的人工电子皮肤........................................3
1.1.3 基于温度传感器的人工电子皮肤................................................4
1.2 基于 TFT 技术的柔性温度传感器电子皮肤研究现状.........................8
1.3 课题研究的目的与意义........................................................................11
1.4 本文主要研究内容................................................................................12
第二章 柔性温度传感器的设计................................................................................13
2.1 引言........................................................................................................13
2.2 传感器的结构选择................................................................................13
2.3 柔性透明 a-IGZO 底栅薄膜晶体管工作原理 ......................................15
2.4 主要功能材料及其特性........................................................................16
2.4.1 透明温度敏感材料......................................................................16
2.4.2 绝缘层材料..................................................................................18
2.4.3 柔性衬底材料..............................................................................19
2.5 掩膜版的设计........................................................................................19
2.6 本章小结................................................................................................21
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