lecture03-151116.pdf

Lecture 03 – DSM CMOS Technology (11/16/15) Page 03-1

CMOS Analog Circuit Design © P.E. Allen - 2016

LECTURE 03 - DEEP SUBMICRON (DSM) CMOS TECHNOLOGY

LECTURE ORGANIZATION

Outline

• Characteristics of a deep submicron CMOS technology

• Typical deep submicron CMOS technology

• Summary

Lecture 03 – DSM CMOS Technology (11/16/15) Page 03-2

CMOS Analog Circuit Design © P.E. Allen - 2016

Isolation of Transistors

The use of reverse bias pn junctions to isolate transistors becomes impractical as the

transistor sizes decrease.

Lecture 03 – DSM CMOS Technology (11/16/15) Page 03-3

CMOS Analog Circuit Design © P.E. Allen - 2016

Shallow trench isolation (STI) allows closer spacing of transistors by eliminating the

depletion region at the surface.

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Lecture 03 – DSM CMOS Technology (11/16/15) Page 03-4

CMOS Analog Circuit Design © P.E. Allen - 2016

What are the differences between a LOCOS and STI technology?

spacing is large, the Bird’s beak can be compensated using techniques

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isolation compared to LOCOS. This is a significant advantage for any process where

there are implants before STI.

Lecture 03 – DSM CMOS Technology (11/16/15) Page 03-5

CMOS Analog Circuit Design © P.E. Allen - 2016