AEC - Q100 - Rev-H
September 11, 2014
FAILURE MECHANISM BASED
STRESS TEST QUALIFICATION
FOR
INTEGRATED CIRCUITS
Component Technical Committee
Automotive Electronics Council
AEC - Q100 - REV-H
September 11, 2014
Component Technical Committee
Automotive Electronics Council
TABLE OF CONTENTS
AEC-Q100 Failure Mechanism Based Stress Test Qualification for Integrated Circuits
Appendix 1: Definition of a Qualification Family
Appendix 2: Q100 Certification of Design, Construction and Qualification
Appendix 3: Plastic Package Opening for Wire Bond Testing
Appendix 4: Minimum Requirements for Qualification Plans and Results
Appendix 5: Part Design Criteria to Determine Need for EMC Testing
Appendix 6: Part Design Criteria to Determine Need for SER Testing
Appendix 7 AEC-Q100 and the Use of Mission Profiles
Attachments
AEC-Q100-001: WIRE BOND SHEAR TEST
AEC-Q100-002: HUMAN BODY MODEL (HBM) ELECTROSTATIC DISCHARGE (ESD) TEST
AEC-Q100-003: MACHINE MODEL (MM) ELECTROSTATIC DISCHARGE (ESD) TEST
(DECOMMISSIONED)
AEC-Q100-004: IC LATCH-UP TEST
AEC-Q100-005: NONVOLATILE MEMORY WRITE/ERASE ENDURANCE, DATA RETENTION,
AND OPERATIONAL LIFE TEST
AEC-Q100-006: ELECTRO-THERMALLY INDUCED PARASITIC GATE LEAKAGE (GL) TEST
(DECOMMISSIONED)
AEC-Q100-007: FAULT SIMULATION AND TEST GRADING
AEC-Q100-008: EARLY LIFE FAILURE RATE (ELFR)
AEC-Q100-009: ELECTRICAL DISTRIBUTION ASSESSMENT
AEC-Q100-010: SOLDER BALL SHEAR TEST
AEC-Q100-011: CHARGED DEVICE MODEL (CDM) ELECTROSTATIC DISCHARGE (ESD)
TEST
AEC-Q100-012: SHORT CIRCUIT RELIABILITY CHARACTERIZATION OF SMART POWER
DEVICES FOR 12V SYSTEMS
AEC - Q100 - REV-H
September 11, 2014
Component Technical Committee
Automotive Electronics Council
Revision Summary
This informative section briefly describes the changes made in the AEC-Q100 Rev-H document, compared to
previous document version, AEC-Q100 Rev-G (May 14, 2007). Punctuation and text improvements are not
included in this summary.
• Section 1.2.1 – Automotive Reference Documents: Added reference to AEC-Q005 Pb-Free
Requirements
• NEW Section 1.2.4 – Decommissioned Reference Documents: Added new section providing guidance
on elimination of AEC-Q100-003 Machine Model ESD (removed due to industry test obsolescence) and
Q100-006 Electrothermally Induced Gate Leakage (removed due to lack of industry need as a
qualification test)
• Section 1.3.1 – AEC Q100 Qualification: Added recommendation that passing ESD voltage level be
specified in supplier datasheet with footnote on any pin exceptions
• NEW Section 1.3.2 – AEC Certification: Added new definition clarifying that AEC-Q100 “certification”
does not exist, suppliers perform qualification testing according to AEC standards
• Section 1.3.4 – Definition of Part Operating Temperature Grade: Added new Table 1 defining part
operating temperature grades and guidance on use of temperature (e.g., endpoint, junction) during tests;
eliminated Grade 4 (0°C to +70°C) entry
• NEW Section 1.3.5 – Capability Measure, Cpk: Added new definition and reference to AEC-Q003
Characterization document
• Section 2.2 – Precedence of Requirements: Added clarification to Purchase Order and Device
Specification entries
• Section 2.3.1 – Definition of Generic Data: Moved existing Table 1, Part Qualification/Requalification Lot
Requirements, and portion of section text to Appendix 1 – Definition of a Product Qualification Family
• Section 2.3.2 – Time Limit for Acceptance of Generic Data: Added text on use of diagram in Figure 1
• Section 2.4.1 – Lot Requirements: Added statement that deviation from Table 2 requires technical
explanation
• Section 2.5 – Definition of Test Failure After Stressing: Added statement on EOS
• Section 3.1.1 – Qualification of A New Device Manufactured in A Currently Qualified Family: Deleted this
entire section, subject is covered in Appendix 1.
• Section 3.2.3 – Criteria for Passing Requalification: Modified text to provide better guidance on AEC-
Q100 requalification
• NEW Section 3.3 – Qualification of A Pb-Free Device: Added new section with requirements for Pb-Free
devices and references to AEC-Q005 Pb-Free Requirements document
• Figure 2 – Qualification Test Flow:
o Test Group A: Removed statement of PC before PTC
o Test Group B: Corrected test temperature order for post-HTOL testing to Room, Cold, & Hot
o Test Group E: Removed reference to MM ESD and GL tests
• Table 2 – Qualification Test Methods:
o Test A3 – Autoclave or Unbiased HAST or Temperature Humidity (without Bias): Added TH
reference to Additional Requirements column
o Test A4 – Temperature Cycling: Revised low-end temperature and minimum duration; added
legacy test temperature note; eliminated Grade 4 entry
o Test A6 – High Temperature Storage Life: Added reference to Ta (ambient temperature)
o Test A7 – High Temperature Operating Life: Removed 408 hour test duration option; added
notes regarding use of Ta (ambient temperature) and Tj (junction temperature)
o Test C1 – Wire Bond Shear: Removed Ppk requirement; modified Cpk accept criteria to
Cpk>1.67; added reference to AEC-Q003
o Test C2 – Wire Bond Pull: Removed Ppk requirement; modified Cpk accept criteria to
Cpk>1.67; added reference to AEC-Q003
o Test C3 – Solderability: Added reference to J-STD-002D and statement on use of dry bake
AEC - Q100 - REV-H
September 11, 2014
Component Technical Committee
Automotive Electronics Council
Revision Summary (continued)
• Table 2 – Qualification Test Methods (continued):
o Test C4 – Physical Dimension: Removed Ppk requirement; modified Cpk accept criteria to
Cpk>1.67; added reference to AEC-Q003
o Test C5 – Solder Ball Shear: Removed Ppk requirement; modified Cpk accept criteria to
Cpk>1.67; added reference to AEC-Q003
o Test E2 – Electrostatic Discharge Human Body Model/Machine Model: Eliminated Machine
Model (MM) ESD entry; added reference to Section 1.3.1
o Test E3 – Electrostatic Discharge Charged Device Model: Added reference to Section 1.3.1
o Test E5 – Electrical Distribution: Added Cpk>1.67 accept criteria and reference to AEC-Q003
o Eliminated Test E8 – Electrothermally Induced Gate Leakage entry
o NEW Test E12 – Lead (Pb) Free: Added new test entry
o Test F1 – Part Average Testing: Modified Additional Requirements providing guidance on
sample sizes and accept criteria
o Test F2 – Statistical Bin/Yield Analysis: Modified Additional Requirements providing
guidance on sample sizes and accept criteria
o Test G1 – Mechanical Shock: Modified sample size/lot and number of lots
o Test G2 – Variable Frequency Vibration: Modified sample size/lot and number of lots
o Test G3 – Constant Acceleration: Modified sample size/lot and number of lots
o Test G4 – Gross/Fine Leak: Modified sample size/lot and number of lots
o Test G8 – Internal Water Vapor: Modified sample size/lot
o Table 2 Legend: Added Note L reference for Pb-Free devices
• Table 3 – Process Change Qualification Guidelines for the Selection of Tests: Removed MM (Machine
Model) ESD and GL (Gate Leakage) entries; added LF (Lead Free) entry
• Appendix 1 – Definition of a Product Qualification Family: Complete revision
o NEW Section A1.1 – Product: Added new section and text
o NEW Section A1.4 – Qualification/Requalification Lot Requirements: Relocated original
AEC-Q100 Rev G Table 1 to Appendix 1 and renumbered as Table A1.1
o Revised Table A1.1 – Part Qualification/Requalification Lot Requirements: Deleted row titled
“A new part that has some applicable generic data”; added NEW entry where “The part to be
qualified is slightly more complex”
o NEW Table A1.2 – Examples for Generic Data Use: Added new Table and content
• Appendix Template 4A – AEC-Q100 Qualification Test Plan:
o Test C3, SD - Solderability: Added reference to J-STD-002D and requirement of steam aging
o Test E2, HBM/MM – ESD Human Body/machine Model: Eliminated MM entry
o Test E8, GL – Electrothermally Induced Gate Leakage: Eliminated GL entry
o Tests G1-G4, MECH – Hermetic Package Tests: Modified sample size and lot requirements
• Appendix Template 4B – AEC-Q100 Generic Data:
o Test C3, SD: Added reference to J-STD-002D and requirement of steam aging
o Test E2, HBM/MM: Eliminated MM entry
o Test E8, GL: Eliminated GL entry
o Test G1, MS: Modified sample size and lot requirements
o Test G2, VFV: Modified sample size and lot requirements
o Test G3, CA: Modified sample size and lot requirements
o Test G4, GFL: Modified sample size and lot requirements
o Complete revision of Generic Data Part Attributes Section
• NEW Appendix 7 – Guideline on Relationship of Robustness Validation to AEC-Q100: Added NEW
Section and text, including NEW Figures A7.1 & A7.2 and NEW Table A7.1
AEC - Q100 - REV-H
September 11, 2014
Component Technical Committee
Automotive Electronics Council
Acknowledgment
Any document involving a complex technology brings together experience and skills from many sources. The
Automotive Electronics Council would especially like to recognize the following significant contributors to the
revision of this document:
Sustainin
g Members
:
Bankim Patel Autoliv Drew Hoffman Gentex
Earl Fischer Autoliv
Gary Fisher
Gentex (formerly with Johnson
Controls)
John Schlais Continental Corporation Steve Sibrel Harmon
Hadi Mehrooz Continental Corporation Ludger Kappius Hella
Brad Ulery Cummins Joe Lucia John Deere
Mark A. Kelly Delphi Corporation Eric Honsowetz Lear Corporation
Ramon Aziz Delphi Corporation Thomas VanDamme TRW Automotive
Mike Wiegand Denso International Jorge Marta Visteon Corporation
Technical Members
:
Tim Haifley Altera Zhongning Liang NXP Semiconductors
Jean-Pierre Guerre Altera
Bob Knoell
[Q100 Team Leader]
NXP Semiconductors
Heinz Reiter AMS Peter Turlo ON Semiconductor
James Molyneaux Analog Devices Daniel Vanderstraeten ON Semiconductor
Xin Miao Zhao Cirrus Logic Pamela Finer Pericom Semiconductor
Rene Rodgers Cypress Semiconductor Tony Walsh Renesas Electronics
Nick Lycoudes Freescale Futoshi Tagami Renesas Electronics
Werner Kanert Infineon Technologies Francis Classe Spansion
Scott Daniels International Rectifier Bassel Atala STMicroelectronics
Lyn Zastrow ISSI Mike Cannon TDK
Banjie Bautista ISSI Larry Ting Texas Instruments
Tom Lawler Lattice Semiconductor James Williams Texas Instruments
John Grogan Macronix Gerardo Sepulveda Tyco Electronics
Warren Chen Macronix Arthur Chiang Vishay
Jeff Aquino Maxim Integrated David Leandri Vishay
Mike Buzinski Microchip Anca Voicu Xilinx
Nick Martinez Microchip Dean Tsaggaris Xilinx
Angelo Visconti Micron
Associate Members
:
James McLeish DfR Solutions
Jeff Darrow Global Foundries
Andy Mackie Indium Corporation
Weiyen Kuo TSMC
Guest Members
:
Jeff Jarvis AMRDEC
Other Contributors
:
Wolfgang Reinprecht AMS Thomas Hough Renesas Electronics
Alan Righter Analog Devices Thomas Stich Renesas Electronics
John Timms Continental Corporation Donna Moreland Texas Instruments
Richard Forster Continental Corporation Scott Ward Texas Instruments
John Monteiro
formerly with Delphi
Marty Johnson Texas Instruments
Paul Ngan NXP Semiconductors Colin Martin
formerly withTexas Instruments
Theo Smedes NXP Semiconductors Kedar Bhatawadekar Tyco Electronics
Rene Rongen NXP Semiconductors Cesar Avitia Visteon Corporation
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