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tps40345-mos管-电感-电容-数值计算
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tps40345-mos管-电感-电容-数值计算
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5
4
3
2
6
7
8
9
BOOT
HDRV
SW
LDRV/OC
FB
COMP
PGOOD
EN/SS
TPS40345
1 10BPVDD
PAD
V
IN
SD
V
OUT
V
IN
Copyright © 2017, Texas Instruments Incorporated
V
OUT
GND
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSD62
TPS40345
ZHCSH69 –DECEMBER 2017
TPS40345 3V 至至 20V 输输入入同同步步降降压压控控制制器器
1
1 特特性性
1
• 输入电压范围:3V 至 20V
• 600kHz 开关频率
• 高侧和低侧 FET R
DS(on)
电流检测
• 可编程热补偿 OCP 电平
• 可编程软启动
• 600mV、1.3% 基准电压
• 电压前馈补偿
• 支持预偏置输出
• 扩频频谱
• 145°C 的热关断保护限制
• 10 引脚 3mm × 3mm VSON 封装,散热垫具有接
地连接
2 应应用用
• 负载点 (POL) 模块
• 打印机
• 数字电视
• 电信
3 说说明明
TPS40345 是一款同步降压控制器,可在 3V 到 20V
的输入电压下工作,可用于成本优化型 应用。此控制
器实现了一种电压模式控制架构,具有输入电压前馈补
偿功能,可对输入电压变化做出即时响应。开关频率设
置为 600kHz。
开关频率中添加了扩频频谱 (FSS) 功能,显著降低了
峰值 EMI 噪声,使其更容易符合 EMI 标准。
TPS40345 可提供各种用户可编程功能,其中包括软
启动、过流保护 (OCP) 电平以及环路补偿。
OCP 电平可以通过从 LDRV 引脚连接到电路接地的单
个外部电阻器进行编程。在初始上电过程
中,TPS40345 可进入校准环节,测量 LDRV 引脚电
压,并设置内部 OCP 电压级。在工作期间,器件可在
通电时通过将已编程 OCP 电压电平与低侧 FET 上的
压降进行比较来确定是否发生过流情况。之
后,TPS40345 会进入关断和重启周期,直到故障消
除为止。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
TPS40345 VSON (10) 3.00mm × 3.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
简简化化应应用用示示意意图图
2
TPS40345
ZHCSH69 –DECEMBER 2017
www.ti.com.cn
Copyright © 2017, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
7 Detailed Description.............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 12
8 Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Applications ................................................ 13
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 19
11 器器件件和和文文档档支支持持 ..................................................... 20
11.1 器件支持................................................................ 20
11.2 文档支持................................................................ 20
11.3 接收文档更新通知 ................................................. 20
11.4 社区资源................................................................ 20
11.5 商标 ....................................................................... 20
11.6 静电放电警告......................................................... 20
11.7 Glossary................................................................ 20
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 20
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
日日期期 修修订订版版本本 说说明明
2017 年 12 月 * 初始发行版
5 4 3 2 1
6 7 8 9 10
FB COMP PGOOD EN/SS VDD
BOOT HDRV SW
LDRV/
OC
BP
Thermal Pad
3
TPS40345
www.ti.com.cn
ZHCSH69 –DECEMBER 2017
Copyright © 2017, Texas Instruments Incorporated
5 Pin Configuration and Functions
DRC Package
10-Pin VSON
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
BOOT 6 I
Gate drive voltage for the high-side N-channel MOSFET. A 0.1-µF capacitor (typical) must be connected
between this pin and SW. For low input voltage operation, an external Schottky diode from BP to BOOT is
recommended to maximize the gate drive voltage for the high-side.
BP 10 O
Output bypass for the internal regulator. Connect a low ESR bypass ceramic capacitor of 1 µF or greater from
this pin to GND.
COMP 4 O Output of the error amplifier and connection node for loop feedback components.
EN/SS 2 I
Logic level input which starts or stops the controller via an external user command. Letting this pin float turns
the controller on. Pulling this pin low disables the controller. This is also the soft-start programming pin. A
capacitor connected from this pin to GND programs the soft-start time. The capacitor is charged with an
internal current source of 10 µA. The resulting voltage ramp of this pin is also used as a second non-inverting
input to the error amplifier after a 0.8 V (typical) level shift downwards. Output regulation is controlled by the
internal level shifted voltage ramp until that voltage reaches the internal reference voltage of 600 mV – the
voltage ramp of this pin reaches 1.4 V (typical). Optionally, a 267-kΩ resistor from this pin to BP enables the
FSS feature.
FB 5 I
Inverting input to the error amplifier. In normal operation, the voltage on this pin is equal to the internal
reference voltage.
PGOOD 3 O Open-drain power good output.
HDRV 7 O Bootstrapped gate drive output for the high-side N-channel MOSFET.
LDRV/OC 9 O
Gate drive output for the low-side synchronous rectifier N-channel MOSFET. A resistor from this pin to GND
is also used to determine the voltage level for OCP. An internal current source of 10 µA flows through the
resistor during initial calibration and that sets up the voltage trip point used for OCP.
VDD 1 I
Power input to the controller. Bypass VDD to GND with a low ESR ceramic capacitor of at least 1 µF close to
the device.
SW 8 O
Sense line for the adaptive anti-cross conduction circuitry. Serves as common connection for the flying high-
side FET driver.
GND
Thermal
Pad
—
Ground connection to the controller. This is also the thermal pad used to conduct heat from the device. This
connection serves a twofold purpose. The first is to provide an electrical ground connection for the device.
The second is to provide a low thermal impedance path from the device die to the PCB. This pad should be
tied externally to a ground plane.
4
TPS40345
ZHCSH69 –DECEMBER 2017
www.ti.com.cn
Copyright © 2017, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those included under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods of time may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
VDD –0.3 22 V
SW –3 27 V
SW (< 100 ns pulse width, 10 µJ) –5 V
BOOT –0.3 30 V
HDRV –5 30 V
BOOT-SW, HDRV-SW (differential from BOOT or HDRV to SW) –0.3 7 V
COMP, PGOOD, FB, BP, LDRV, EN/SS –0.3 7 V
Operating junction temperature, T
J
–40 145 °C
Storage temperature, T
stg
–55 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1500
6.3 Recommended Operating Conditions
MIN NOM MAX UNIT
Input voltage, VDD 3 20 V
Operating junction temperature, T
J
–20 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
TPS40345
UNITDRC (VSON)
10 PINS
R
θJA
Junction-to-ambient thermal resistance 44.3 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 56.1 °C/W
R
θJB
Junction-to-board thermal resistance 19.2 °C/W
ψ
JT
Junction-to-top characterization parameter 0.7 °C/W
ψ
JB
Junction-to-board characterization parameter 19.4 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 5.5 °C/W
5
TPS40345
www.ti.com.cn
ZHCSH69 –DECEMBER 2017
Copyright © 2017, Texas Instruments Incorporated
(1) Ensured by design. Not production tested.
6.5 Electrical Characteristics
T
J
= –20°C to 125° C, V
VDD
= 12 V, all parameters at zero power dissipation (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE REFERENCE
V
FB
FB input voltage
T
J
= 25°C, 3 V < V
VDD
< 20 V 597 600 603
mV
–20°C < T
J
< 125°C, 3 V < V
VDD
< 20 V 592 600 608
INPUT SUPPLY
V
VDD
Input supply voltage range 3 20 V
IDD
SD
Shutdown supply current V
EN/SS
< 0.2 V 70 100 µA
IDD
Q
Quiescent, nonswitching Let EN/SS float, V
FB
= 1 V 2.5 3.5 mA
ENABLE/SOFT-START
V
IH
High-level input voltage,
EN/SS
0.55 0.7 1 V
V
IL
Low-level input voltage,
EN/SS
0.27 0.3 0.33 V
I
SS
Soft-start source current 8 10 12 µA
V
SS
Soft-start voltage level 0.4 0.8 1.3 V
BP REGULATOR
V
BP
Output voltage I
BP
= 10 mA 6.2 6.5 6.8 V
V
DO
Regulator dropout voltage,
V
VDD
– V
BP
I
BP
= 25 mA, V
VDD
= 3 V 70 110 mV
OSCILLATOR
f
SW
PWM frequency 540 600 660 kHz
V
RAMP
(1)
Ramp amplitude V
VDD
/6.6 V
VDD
/6 V
VDD
/5.4 V
f
SWFSS
Frequency spread-spectrum
frequency deviation
12% f
SW
f
MOD
Modulation frequency 25 kHz
PWM
D
MAX
(1)
Maximum duty cycle V
FB
= 0 V, 3 V < V
VDD
< 20 V 90%
t
ON(min)
(1)
Minimum controllable pulse
width
70 ns
t
DEAD
Output driver dead time
HDRV off to LDRV on 5 25 35
ns
LDRV off to HDRV on 5 25 30
ERROR AMPLIFIER
G
BWP
(1)
Gain bandwidth product 10 24 MHz
A
OL
(1)
Open loop gain 60 dB
I
IB
Input bias current (current
out of FB pin)
V
FB
= 0.6 V 75 nA
I
EAOP
Output source current V
FB
= 0 V 2
mA
I
EAOM
Output sink current V
FB
= 1 V 2
PGOOD
V
OV
Feedback upper voltage limit
for PGOOD
655 675 700
mVV
UV
Feedback lower voltage limit
for PGOOD
500 525 550
V
PGD-HYST
PGOOD hysteresis voltage
at FB
25 40
R
PGD
PGOOD pulldown resistance V
FB
= 0 V, I
FB
= 5 mA 30 70 Ω
I
PGDLK
PGOOD leakage current
550 mV < V
FB
< 655 mV,
V
PGOOD
= 5 V
10 20 µA
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