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RF and microwave power amplifier design
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433页
《射频与微波功率放大器设计》的英文原版,电子档直接生成,非常清晰。中译本中多处翻译含糊,直接查阅英文版可以理解的更清楚!
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RF and Microwave
Power Amplifier
Design
Andrei Grebennikov
M/A-COM, Ireland
McGraw-Hill
New York Chicago San Francisco Lisbon London
Madrid Mexico City Milan New Delhi San Juan
Seoul Singapore Sydney Toronto
i
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Library of Congress Cataloging-in-Publication Data
Grebennikov, Andrei, date.
RF and microwave power amplifier design / Andrei Grebennikov.
p. cm.
Includes bibliographical references and index.
ISBN 0-07-144493-9 (alk. paper)
1. Power amplifiers. 2. Microwave amplifiers. I. Title.
TK7871.58.P6G72 2004
621.39
5—dc22 2004057908
Copyright
c
2005 by The McGraw-Hill Companies, Inc. All rights re-
served. Printed in the United States of America. Except as permitted
under the United States Copyright Act of 1976, no part of this publi-
cation may be reproduced or distributed in any form or by any means,
or stored in a data base or retrieval system, without the prior written
permission of the publisher.
1234567890 DOC/DOC 010987654
ISBN 0-07-144493-9
The sponsoring editor for this book was Stephen S. Chapman and the pro-
duction supervisor was Sherri Souffrance. It was set in Century School-
book by International Typesetting and Composition. The art director for
the cover was Handel Low.
Printed and bound by RR Donnelley.
McGraw-Hill books are available at special quantity discounts to use as
premiums and sales promotions, or for use in corporate training pro-
grams. For more information, please write to the Director of Special
Sales, McGraw-Hill Professional, Two Penn Plaza, New York, NY 10121-
2298. Or contact your local bookstore.
This book is printed on recycled, acid-free paper
containing a minimum of 50% recycled, de-inked
fiber.
Information contained in this work has been obtained by The
McGraw-Hill Companies, Inc. (“McGraw-Hill”) from sources
believed to be reliable. However, neither McGraw-Hill nor its
authors guarantee the accuracy or completeness of any informa-
tion published herein, and neither McGraw-Hill nor its authors
shall be responsible for any errors, omissions, or damages aris-
ing out of use of this information. This work is published with
the understanding that McGraw-Hill and its authors are sup-
plying information but are not attempting to render engineer-
ing or other professional services. If such services are required,
the assistance of an appropriate professional should be sought.
ii
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Contents
Preface vii
Acknowledgments xi
Chapter 1. Two-Port Network Parameters 1
Traditional Network Parameters 1
Scattering Parameters 5
Conversions between Two-Port Parameters 8
Interconnection of Two-Port Networks 12
Practical Two-Port Circuits 15
Single-element networks 15
π-and T-networks 16
Three-Port Network with Common Terminal 19
Transmission Line 21
Chapter 2. Nonlinear Circuit Design Methods 27
Spectral Domain Analysis 27
Trigonometric identities 28
Piecewise-linear approximation 29
Bessel functions 33
Time Domain Analysis 35
Newton-Raphson Algorithm 42
Quasilinear Method 45
Harmonic Balance Method 48
Chapter 3. Nonlinear Active Device Modeling 53
Power MOSFETs 54
Small-signal equivalent circuit 54
Determination of equivalent circuit elements 58
Nonlinear I-V models 61
Nonlinear C-V models 66
Charge conservation 73
Gate-source resistance 74
Temperature dependence 74
iii
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iv Contents
GaAs MESFETs and HEMTs 77
Small-signal equivalent circuit 77
Determination of equivalent circuit elements 79
Curtice quadratic nonlinear model 83
Curtice-Ettenberg cubic nonlinear model 84
Materka-Kacprzak nonlinear model 85
Raytheon (Statz et al.) nonlinear model 86
TriQuint nonlinear model 90
Chalmers (Angelov) nonlinear model 91
IAF (Berroth) nonlinear model 94
Model selection 95
BJTs and HBTs 96
Small-signal equivalent circuit 96
Determination of equivalent circuit elements 97
Equivalence of intrinsic π-circuit and T-circuit topologies 100
Nonlinear bipolar device modeling 102
Chapter 4. Impedance Matching 109
Main Principles 109
Smith Chart 112
Matching with Lumped Elements 117
Bipolar UHF power amplifier 124
MOSFET VHF high-power amplifier 129
Matching with Transmission Lines 131
Narrow-band power amplifier design 140
Broadband high-power amplifier design 142
Types of Transmission Line 145
Coaxial line 145
Stripline 146
Microstrip line 149
Slotline 151
Coplanar waveguide 153
Chapter 5. Power Combiners, Impedance Transformers
and Directional Couplers 155
Basic Properties 155
Three-Port Networks 156
Four-Port Networks 157
Coaxial Cable Transformers and Combiners 159
Wilkinson Power Divider 168
Microwave Hybrids 175
Coupled-Line Directional Couplers 182
Chapter 6. Power Amplifier Design Fundamentals 189
Main Characteristics 190
Gain and Stability 195
Stabilization Circuit Technique 198
Frequency domains of BJT potential instability 198
Frequency domains of MOSFET potential instability 204
Some examples of stabilization circuits 208
剩余432页未读,继续阅读
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- zhoushunli10072014-10-06书有点不清楚,但可以看!
- hyland1232013-05-03没想到CSDN上还有这么好的射频微波方面的书籍,都是经典原文书籍,赞!
- Crusader6102013-07-28经典的功放教材,推荐。
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