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TPS54560-Q1-车规级.pdf
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TPS54560-Q1-车规级.pdf
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SW
VIN
GND
BOOT
FB
COMP
TPS54560-Q1
EN
RT/CLK
V
IN
V
OUT
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Efficiency (%)
I
O
- Output Current (A)
Series1
Series2
Series4
C024
V
IN
= 12 V
V
IN
= 36 V
V
IN
= 60 V
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVSBZ0
TPS54560-Q1
ZHCSBN7A –SEPTEMBER 2013–REVISED DECEMBER 2014
TPS54560-Q1 具具有有 Eco-Mode™ 的的 4.5V 至至 60V 输输入入、、5A、、降降压压 DC-DC
转转换换器器
1
1 特特性性
1
• 适用于汽车电子 应用
• 具有符合 AEC-Q100 的下列结果:
– 器件温度 1 级:-40°C 至 125°C 的环境运行温
度范围
– 器件人体放电模式 (HBM) 静电放电 (ESD) 分类
等级 H1C
– 器件组件充电模式 (CDM) ESD 分类等级 C3B
• 可在轻负载条件下实现高效率,使用脉冲跳跃 Eco-
mode™
• 92mΩ 高侧金属氧化物半导体场效应晶体管
(MOSFET)
• 146μA 静态运行电流和 2μA 关断电流
• 100kHz 至 2.5MHz 可调开关频率
• 同步至外部时钟
• 轻负载条件下使用集成型引导 (BOOT) 再充电场效
应晶体管 (FET) 实现的低压降
• 可调欠压闭锁 (UVLO) 电压和滞后
• 0.8V 1% 内部电压基准
• 8 引脚散热增强型小外形集成电路 (HSOIC)
PowerPAD™封装
• -40°C 至 150°C T
J
运行范围
• 由 WEBENCH
®
软件工具提供支持
2 应应用用范范围围
• 车辆附件:全球卫星定位 (GPS)(请参见
SLVA412),娱乐系统,高级驾驶员辅助系统
(ADAS),紧急呼叫系统 (eCall)
• USB 专用充电端口和电池充电器(请参见
SLVA464)
• 工业自动化和电机控制
• 12V,24V 和 48V 工业、汽车和通信电源系统
3 说说明明
TPS54560-Q1 是一款 60V、5A 降压稳压器,此稳压
器集成有一个高侧 MOSFET。按照 ISO 7637 标准,
此器件能够耐受的抛负载脉冲高达 65V。电流模式控
制提供了简单的外部补偿和灵活的组件选择。低纹波脉
冲跳跃模式可将无负载电源电流降至 146μA。当使能
引脚被拉至低电平时,关断电源电流会降至 2μA。
欠压闭锁在内部设定为 4.3V,但可用一个使能引脚上
的外部电阻分压器将之提高。该器件可在内部控制输出
电压启动斜坡,从而控制启动过程并消除过冲。
宽开关频率范围可实现对效率或者外部组件尺寸进行的
优化。输出电流是受限的逐周期电流。频率折返和热关
断在过载条件下保护内部和外部组件。
TPS54560-Q1 采用 8 引脚散热增强型 HSOIC
PowerPAD 封装。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
TPS54560-Q1 SO PowerPAD (8) 3.90mm x 4.89mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
简简化化电电路路原原理理图图 效效率率与与负负载载电电流流间间的的关关系系
2
TPS54560-Q1
ZHCSBN7A –SEPTEMBER 2013–REVISED DECEMBER 2014
www.ti.com.cn
Copyright © 2013–2014, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用范范围围................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ..................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information ................................................. 4
6.5 Electrical Characteristics.......................................... 5
6.6 Typical Characteristics.............................................. 6
7 Detailed Description............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 21
8 Applications and Implementation ...................... 23
8.1 Application Information............................................ 23
8.2 Typical Application .................................................. 23
9 Power Supply Recommendations...................... 33
10 Layout................................................................... 34
10.1 Layout Guidelines ................................................. 34
10.2 Layout Example .................................................... 34
10.3 Power Dissipation ................................................. 34
10.4 Safe Operating Area ............................................. 35
11 器器件件和和文文档档支支持持 ..................................................... 37
11.1 文档支持................................................................ 37
11.2 商标 ....................................................................... 37
11.3 静电放电警告......................................................... 37
11.4 术语表 ................................................................... 37
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 38
4 修修订订历历史史记记录录
Changes from Original (September 2013) to Revision A Page
• 已添加 ESD 额定值表,特性 描述 部分,器件功能模式,应用和实施部分,电源相关建议部分,布局部分,器件和文
档支持部分以及机械、封装和可订购信息部分。 .................................................................................................................... 1
GND7
COMP6
FB5
SW8
2
3
4
1
VIN
EN
RT/CLK
BOOT
Thermal
Pad
9
3
TPS54560-Q1
www.ti.com.cn
ZHCSBN7A –SEPTEMBER 2013–REVISED DECEMBER 2014
Copyright © 2013–2014, Texas Instruments Incorporated
5 Pin Configuration and Functions
DDA Package
8-Pin HSOIC
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
BOOT 1 O
A bootstrap capacitor is required between BOOT and SW. If the voltage on this capacitor is below the
minimum required to operate the high-side MOSFET, the output is switched off until the capacitor is
refreshed.
VIN 2 I Input supply voltage with 4.5 V to 60 V operating range.
EN 3 I
Enable pin, with internal pull-up current source. Pull below 1.2 V to disable. Float to enable. Adjust the input
undervoltage lockout with two resistors. See the Enable and Adjusting Undervoltage Lockout section.
RT/CLK 4 I
Resistor Timing and External Clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper
threshold, a mode change occurs and the pin becomes a synchronization input. The internal amplifier is
disabled and the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal
amplifier is re-enabled and the operating mode returns to resistor frequency programming.
FB 5 I Inverting input of the transconductance (gm) error amplifier.
COMP 6 O
Error amplifier output and input to the output switch current (PWM) comparator. Connect frequency
compensation components to this pin.
GND 7 – Ground
SW 8 I The source of the internal high-side power MOSFET and switching node of the converter.
Thermal
Pad
9 –
GND pin must be electrically connected to the exposed pad on the printed circuit board for proper
operation.
4
TPS54560-Q1
ZHCSBN7A –SEPTEMBER 2013–REVISED DECEMBER 2014
www.ti.com.cn
Copyright © 2013–2014, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input voltage
VIN –0.3 65
V
EN –0.3 8.4
BOOT 73
FB –0.3 3
COMP –0.3 3
RT/CLK –0.3 3.6
Output voltage
BOOT-SW 8
VSW –0.6 65
SW, 10-ns Transient –2 65
Operating junction temperature –40 150 °C
Storage temperature, T
stg
–65 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011 ±500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating Input Voltage on (VIN pin) 4.5 60 V
Operating junction temperature, T
J
–40 150 °C
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Test boards conditions:
(a) 3 inches x 3 inches, 2 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground plane, bottom layer
(d) 6 thermal vias (13mil) located under the device package
6.4 Thermal Information
THERMAL METRIC
(1)(2)
TPS54560-Q1
UNITDDA
8 PINS
R
θJA
Junction-to-ambient thermal resistance 42.0
°C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 45.8
R
θJB
Junction-to-board thermal resistance 23.4
ψ
JT
Junction-to-top characterization parameter 5.9
ψ
JB
Junction-to-board characterization parameter 23.4
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 3.6
5
TPS54560-Q1
www.ti.com.cn
ZHCSBN7A –SEPTEMBER 2013–REVISED DECEMBER 2014
Copyright © 2013–2014, Texas Instruments Incorporated
(1) Open-loop current limit measured directly at the SW pin and is independent of the inductor value and slope compensation.
6.5 Electrical Characteristics
T
J
= –40°C to 150° C, VIN = 4.5 to 60V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage 4.5 60 V
Internal undervoltage lockout threshold Rising 4.1 4.3 4.48 V
Internal undervoltage lockout threshold
hysteresis
325 mV
Shutdown supply current EN = 0 V, 25°C, 4.5 V ≤ VIN ≤ 60 V 2.25 4.5
μA
Operating: nonswitching supply current FB = 0.9 V, T
A
= 25°C 146 175
ENABLE AND UVLO (EN PIN)
Enable threshold voltage No voltage hysteresis, rising and falling 1.1 1.2 1.3 V
Input current
Enable threshold +50 mV –4.6
μA
Enable threshold –50 mV –0.58 –1.2 -1.8
Hysteresis current –2.2 –3.4 -4.5 μA
Enable to COMP active V
IN
= 12 V, T
A
= 25°C 540 µs
INTERNAL SOFT-START TIME
Soft-Start Time f
SW
= 500 kHz, 10% to 90% 2.1 ms
Soft-Start Time f
SW
= 2.5 MHz, 10% to 90% 0.42 ms
VOLTAGE REFERENCE
Voltage reference 0.792 0.8 0.808 V
HIGH-SIDE MOSFET
On-resistance VIN = 12 V, BOOT-SW = 6 V 92 190 mΩ
ERROR AMPLIFIER
Input current 50 nA
Error amplifier transconductance (g
M
) –2 μA < I
COMP
< 2 μA, V
COMP
= 1 V 350 μMhos
Error amplifier transconductance (g
M
) during
soft-start
–2 μA < I
COMP
< 2 μA, V
COMP
= 1 V, V
FB
= 0.4 V 77 μMhos
Error amplifier dc gain V
FB
= 0.8 V 10,000 V/V
Min unity gain bandwidth 2500 kHz
Error amplifier source/sink V
(COMP)
= 1 V, 100-mV overdrive ±30 μA
COMP to SW current transconductance 17 A/V
CURRENT LIMIT
Current limit threshold
All VIN and temperatures, Open-Loop
(1)
6.3 7.5 8.8
AAll temperatures, VIN = 12 V, Open-Loop
(1)
6.3 7.5 8.3
VIN = 12 V, T
A
= 25°C, Open-Loop
(1)
7.1 7.5 7.9
Current limit threshold delay 60 ns
THERMAL SHUTDOWN
Thermal shutdown 176 °C
Thermal shutdown hysteresis 12 °C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Switching frequency range using RT mode 100 2500 kHz
f
SW
Switching frequency R
T
= 200 kΩ 450 500 550 kHz
Switching frequency range using CLK mode 160 2300 kHz
Minimum CLK input pulse width 15 ns
RT/CLK high threshold 1.55 2 V
RT/CLK low threshold 0.5 1.2 V
RT/CLK falling edge to SW rising edge
delay
Measured at 500 kHz with RT resistor in series 55 ns
PLL lock in time Measured at 500 kHz 78 μs
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