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Rev D, July 2000
July, 2000
1
AN9010
MOSFET Basics
By K.S.Oh
CONTENTS
1. History of Power MOSFETs........................................................................................................ 2
2. FETs ........................................................................................................................................... 3
1) JFET....................................................................................................................................... 3
2) MOSFET ................................................................................................................................ 4
3. The structure of MOSFET .......................................................................................................... 5
1) Lateral Channel Structure ..................................................................................................... 5
2) Vertical Channel Structure ..................................................................................................... 5
4. The characteristics of MOSFET .................................................................................................7
1) Advantages ............................................................................................................................ 7
2) Disadvantage ......................................................................................................................... 7
3) Basic Characteristics.............................................................................................................. 7
5. Characteristics of MOSFET’s ON, OFF.................................................................................... 10
1) Off State ............................................................................................................................... 10
2) Turn – on Transient ...............................................................................................................11
3) On State............................................................................................................................... 13
4) Turn – off Transient .............................................................................................................. 14
6. User’s Manual .......................................................................................................................... 14
1) Characteristics of Capacitance ............................................................................................ 14
2) Characteristics of the Gate Charge...................................................................................... 17
3) Drain – source On Resistance ............................................................................................. 20
4) Threshold Voltage ................................................................................................................ 22
5) Transconductance................................................................................................................ 22
6) Drain – source Breakdown Voltage
Breakdown Voltage Temp. Coeff. ......................................................................................... 23
7) Drain – to – source Leakage Current ................................................................................... 24
8) Gate – to – source Voltage...................................................................................................24
9) Gate – source Leakage, Forward / Reverse ........................................................................ 24
10) Switching Characteristics ...................................................................................................24
11) Single – pulsed Avalanche Energy..................................................................................... 25
12) Repetitive Avalanche Rating .............................................................................................. 27
13) Drain – to – source dv / dt Ratings..................................................................................... 27
14) Thermal Characteristics .....................................................................................................32
15) Continuous Drain Current, Drain Current – pulsed ............................................................ 35
16) Total Power Dissipation, Linear Derating Factor ................................................................ 35
17) Safe Operating Areas......................................................................................................... 36
2
Rev D, July 2000
The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disad-
vantages. This led to the development of the power MOSFET (Metal Oxide Semiconductor Field
Effect Transistor). The power MOSFET is used in many applications such as SMPS (Switched
Mode Power Supplies), computer peripherals, automotive, and motor control. Continuous research
and improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction
Transistor).This application note is a general description of power MOSFETs and a detailed pre-
sentation of items from FSC’s data book specifications.
1. History of Power MOSFETs
The theory behind Field Effect Transistor has been known since 1920~1930, which is 20 years
before the Bipolar Junction Transistor was invented. At that time, J.E. Lilienfeld of USA suggested
a transistor model having two metal contacts on each side with a metallic plate (aluminum) on top
of the semiconductor. The electric field at the semiconductor surface, formed by the voltage sup-
plied at the metallic plate, enables the control of the current flow between the metal contacts. This
was the initial conception of the Field Effect Transistor. But due to lack of appropriate semiconduc-
tor materials and the immature technology, the development was very slow. William Shockely intro-
duced JFETs (Junction Field Effect Transistors) in 1952. Dacey and Ross improved on it in 1953.
In JFETs, Lilienfeld’s metallic field is replaced by a pn junction, the metal contacts are called
source and drain, and the field effect electrode is called gate. Research in small-signal MOSFETs
continued, without any significant improvements in power MOSFET design. New products were
introduced in the 1970s.
In March 1986 FSC formed TFT with 9 people, and began research on power MOSFETs. And cur-
rently, Fairchild produces QFET series using planar technology and low voltage power trench prod-
ucts using trench technology.
3
Rev D, July 2000
2. FETs
JFET, MOSFET
1) JFET (Junction Field Effect Transistors)
There are two types of JFETs. One is an n-channel type and the other is a p-channel type. They
both control the drain-to-source current by the voltage supplied to the gate. As shown in the Figure
1 (a), if the bias is not supplied at the gate, the current flows from the drain to the source, and when
the bias is supplied at the gate, the depletion region begins to grow and reduces the current as
shown in Figure 1 (b). The reason for the wider depletion region of the drain compared to the
source depletion region is that the reverse bias of the gate and the drain V
DG
(=V
GS
+V
DS
) is higher
than the V
GS
(bias between the gate and the source).
Figure 1: The Structure of a JFET and its Operation
(a) When V
GS
(Gate-source voltage) is not supplied
(b) When V
GS
(Gate-source voltage) is supplied
Drain Drain
N
N
PP
P
P
Gate Gate
Depletion
region
V
DS
V
GS
V
DS
Source
Source
(a) (b)
4
Rev D, July 2000
2) MOSFET (Metal Oxide Semiconductor Field Effect Transistors)
The two types of MOSFETs are the depletion type and the enhancement type, and each has a n /
p – channel type. The depletion type is normally on, and operates as a JFET (refer to Figure 2).
The enhancement type is normally off, which means that the drain to source current increases as
the voltage at the gate increases. No current flows when no voltage is supplied at the gate (refer to
Figure 3).
Figure 2: The Structure of a Depletion Type MOSFET and its Operation
(a) When V
GS
(Gate-source voltage) is not supplied
(b) When V
GS
(Gate-source voltage) is supplied
Figure 3: The Structure of an Enhancement Type MOSFET and its Operation
(a) When V
GS
(Gate-source voltage) is not supplied
(b) When V
GS
(Gate-source voltage) is supplied
GS
V
DS
V
DS
V
Source
Source
Drain
Drain
Gate
Gate
P
P
N N
Depletio
n
(a)
(b)
Depletion
GS
V
DS
V
Source
Source
Drain
Drain
Gate
Gate
P
P
N
N
N
N
Channel
(a)
(b)
5
Rev D, July 2000
3. The Structure of a MOSFET
1) Lateral Channel Design
The drain, gate, and source terminal are placed on the surface of a silicon wafer. This is suitable
for integration but not for obtaining high power ratings since the distance between source and drain
must be large to obtain better voltage blocking capability. Also, the drain-to-source current is
inversely proportional to the length.
2) Vertical Channel Design
The drain and source are placed on the opposite sides of a wafer. This is suitable for a power
device, as more space can be used as source. As the length between the source and drain is
reduced, it is possible to increase the drain-to-source current rating, and also increase the voltage
blocking capability by growing the epitaxial layer (drain drift region).
1. The VMOSFET
Design
As shown in Figure 4 (a), this
design, the first to be commercialized
has a V-groove at the
gate region. The DMOSFETs replaced VMOSFETs as there were stability problems in manu-
facturing, and they also had a high electric field at the tip of the V-groove.
2. The DMOSFET
Design
As shown in Figure 4 (b), it has a double-diffusion structure with a P-base region and a N
+
source region. It is the most commercially successful design.
3. The UMOSFET
Design
As shown in Figure 4 (c), this design has a U-groove at the gate region. It has a higher chan-
nel density which reduces the on-resistance as compared to the VMOSFETs and the DMOS-
FETs. UMOSFET designs with the trench etching process were commercialized in the 90’s.
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