碳化硅40mΩ,1200V
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1 C3M0040120K Rev. 1, 10-2020
C3M0040120K
Silicon Carbide Power MOSFET
C3M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q
rr
)
• Halogen free, RoHS compliant
Benets
• Reduce switching losses and minimize gate ringing
• Higher system efciency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch
Package
Part Number Package
Marking
C3M0040120K TO 247-4 C3M0040120K
V
DS
1200 V
I
D
@
25˚C
66 A
R
DS(on)
40 mΩ
Maximum Ratings (T
C
= 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
V
DSmax
Drain - Source Voltage 1200 V V
GS
=
0 V, I
D
= 100 μA
V
GSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1
V
GSop
Gate - Source Voltage (static) -4/+15 V Static Note 2
I
D
Continuous Drain Current
66
A
V
GS
= 15 V, T
C
= 25˚C
Fig. 19
48 V
GS
= 15 V, T
C
= 100˚C
I
D(pulse)
Pulsed Drain Current 100 A Pulse width t
P
limited by T
jmax
P
D
Power Dissipation 326 W T
C
=25˚C, T
J
= 175 ˚C Fig. 20
T
J
, T
stg
Operating Junction and Storage Temperature
-40 to
+175
˚C
T
L
Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
Drain
(Pin 1, TAB)
Power
Source
(Pin 2)
Driver
Source
(Pin 3)
Gate
(Pin 4)
Tab
Drain
1 2 3 4
D S S G
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