TI的充电管理IC--BQ24030和BQ24070的设计资料_VINDPM&DPPM區別CSDN资源-CSDN文库

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DPPM

BQ240

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BQ24030.pdf 761KB

bq24070.pdf 905KB

FEATURES

DESCRIPTION

APPLICATIONS

POWER FLOW DIAGRAM

(1)

BAT

OUT

bq24070/1

PACK+

PACK−

System

VDC

GND

AC Adapter

UDG−04082

40 mΩ

(2)

bq24070

bq24071

www.ti.com

........................................................................................................................................................... SLUS694D – MARCH 2006 – REVISED MAY 2008

SINGLE-CHIP LI-ION CHARGE AND SYSTEM POWER-PATH MANAGEMENT IC

• Small 3,5 mm × 4,5 mm QFN Package

• Designed for Single-Cell Li-Ion- or

The bq24070 and bq24071 are highly integrated

Li-ion linear charger and system power-path

Li-Polymer-Based Portable Applications

management devices targeted at space-limited

• Integrated Dynamic Power-Path Management

portable applications. The bq24070/1 offer DC supply

(DPPM) Feature Allowing the AC Adapter to

(AC adapter) power-path management with

Simultaneously Power the System and Charge

autonomous power-source selection, power FETs

the Battery

and current sensors, high-accuracy current and

• Power Supplement Mode Allows Battery to

voltage regulation, charge status, and charge

termination, in a single monolithic device.

Supplement the AC Input Current

• Autonomous Power Source Selection (AC

The bq24070/1 power the system while

Adapter or BAT)

independently charging the battery. This feature

reduces the charge and discharge cycles on the

• Supports Up to 2 Amps Total Current

battery, allows for proper charge termination and

• Thermal Regulation for Charge Control

allows the system to run with an absent or defective

• Charge Status Outputs for LED or System

battery pack. This feature also allows for the system

Interface Indicates Charge and Fault

to instantaneously turn on from an external power

source in the case of a deeply discharged battery

Conditions

pack. The IC design is focused on supplying

• Reverse Current, Short-Circuit, and Thermal

continuous power to the system when available from

Protection

the AC adapter or battery sources.

• Power Good Status Outputs

• 4.4-V and 6-V Options for System Output

Regulation Voltage

• Smart Phones and PDA

• MP3 Players

• Digital Cameras and Handheld Devices

• Internet Appliances

(1) See Figure 2 and functional block diagram for more detailed feature information.

(2) P-FET back gate body diodes are disconnected to prevent body diode conduction.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

DESCRIPTION (CONTINUED)

bq24070

bq24071

SLUS694D – MARCH 2006 – REVISED MAY 2008 ...........................................................................................................................................................

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOSFET gates.

The MODE pin selects the priority of the input sources. If an input source is not available, then the battery is

selected as the source. With the MODE pin high, the bq24070/1 attempts to charge from the input at the charge

rate set by ISET1 pin. With the MODE pin low, the bq24070/1 defaults to USB charging at the charge rate. This

feature allows the use of a single connector (mini-USB cable), where the host programs the MODE pin according

to the source that is connected (AC adaptor or USB port). Table 1 summarizes the MODE pin function.

Table 1. Power Source Selection Function Summary

MODE STATE AC MAXIMUM SYSTEM USB BOOT-UP

ADAPTER CHARGE RATE

(1)

POWER FEATURE

SOURCE

Low Present ISET2 USB Enabled

Absent N/A Battery Disabled

High Present ISET1 AC Disabled

Absent N/A Battery Disabled

(1) Battery charge rate is always set by ISET1, but may be reduced by a limited input source (ISET2 USB mode) and I

OUT

system load.

ORDERING INFORMATION

(1)

BATTERY PART PACKAGE

OUT PIN STATUS

VOLTAGE (V) NUMBER

(2) (3)

MARKING

4.2 Regulated to 4.4 V

(4)

bq24070RHLR Production BRQ

4.2 Regulated to 4.4 V

(4)

bq24070RHLT Production BRQ

– 40 ° C to 125 ° C

4.2 Regulated to 6 V bq24071RHLR Production BTR

4.2 Regulated to 6 V bq24071RHLT Production BTR

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com.

(2) The RHL package is available in the following options:

R - taped and reeled in quantities of 3,000 devices per reel.

T - taped and reeled in quantities of 250 devices per reel.

(3) This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for

use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including

bromine (Br) or antimony (Sb) above 0.1% of total product weight.

(4) If AC < V

O(OUT-REG)

, the AC is connected to the OUT pin by a P-FET, (Q1).

Product Folder Link(s): bq24070 bq24071

ABSOLUTE MAXIMUM RATINGS

(1)

RECOMMENDED OPERATING CONDITIONS

DISSIPATION RATINGS

bq24070

bq24071

www.ti.com

over operating free-air temperature range (unless otherwise noted)

bq24070/1

Input voltage IN (DC voltage with respect to VSS) – 0.3 V to 18 V

BAT, CE, DPPM, PG, Mode, OUT, ISET1, ISET2, STAT1,

– 0.3 V to 7 V

STAT2, TS, (all DC voltages wrt VSS)

Input voltage

REF

(DC voltage wrt VSS) – 0.3 V to V

O(OUT)

+ 0.3 V

TMR – 0.3 V to V

+ 0.3 V

Input current 3.5 A

OUT 4 A

Output current

BAT

(2)

– 4 A to 3.5 A

Output source current (in

REF

30 mA

regulation at 3.3 V V

REF

)

Output sink current PG, STAT1, STAT2, 15 mA

Storage temperature range, T

stg

– 65 ° C to 150 ° C

Junction temperature range, T

– 40 ° C to 150 ° C

Lead temperature (soldering, 10 seconds) 300 ° C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage

values are with respect to the network ground terminal unless otherwise noted.

(2) Negative current is defined as current flowing into the BAT pin.

MIN MAX UNIT

Supply voltage (V

)

(1)

4.35 16 V

Input current 2 A

Operating junction temperature range – 40 125 ° C

(1) Verify that power dissipation and junction temperatures are within limits at maximum V

≤ 40 ° C DERATING FACTOR

PACKAGE θ

POWER RATING T

> 40 ° C

20-pin RHL

(1)

1.81 W 21 mW/ ° C 46.87 ° C/W

(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. This is

connected to the ground plane by a 2 × 3 via matrix.

Product Folder Link(s): bq24070 bq24071

ELECTRICAL CHARACTERISTICS

bq24070

bq24071

www.ti.com

over junction temperature range (0 ° C ≤ T

≤ 125 ° C) and the recommended supply voltage range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

INPUT BIAS CURRENTS

CC(SPLY)

Active supply current, VCC V

VCC

> V

VCC(min)

1 2 mA

< V

(BAT)

Sleep current (current into BAT

CC(SLP)

2.6 V ≤ V

I(BAT)

≤ V

O(BAT-REG)

, 2 5

pin)

Excludes load on OUT pin

I(AC)

≤ 6V, Total current into IN pin with

CC(IN-STDBY)

Input standby current chip disabled, Excludes all loads, CE=LOW, 200

after t

(CE-HOLDOFF)

delay

µ A

Total current into BAT pin with input present

and chip disabled;

CC(BAT-STDBY)

BAT standby current Excludes all loads, CE=LOW, 45 65

after t

(CE-HOLDOFF)

delay,

0 ° C ≤ T

≤ 85 ° C

(1)

IB(BAT)

Charge done current, BAT Charge DONE, input supplying the load 1 5

OUT PIN-VOLTAGE REGULATION

bq24070 V

I(AC)

≥ 4.4 V + V

4.4 4.5

Output regulation

O(OUT-REG)

voltage

bq24071 V

I(AC)

≥ 6 V + V

6.0 6.3

OUT PIN – DPPM REGULATION

(DPPM-SET)

DPPM set point

(2)

DPPM-SET

< V

OUT

2.6 3.8 V

(DPPM-SET)

DPPM current source Input present 95 100 105 µ A

SF DPPM scale factor V

(DPPM-REG)

= V

(DPPM-SET)

× SF 1.139 1.150 1.162

OUT PIN – FET (Q1, Q2) DROP-OUT VOLTAGE R

DS(on)

)

I(AC)

≥ V

CC(min)

, Mode = High,

(ACDO)

AC to OUT dropout voltage

(3)

300 475

I(AC)

= 1 A, (I

O(OUT)

+ I

O(BAT)

), or no input

BAT to OUT dropout voltage

(BATDO)

I (BAT)

≥ 3 V, I

I(BAT)

= 1.0 A, V

< V

I(BAT)

40 100

(discharging)

OUT PIN - BATTERY SUPPLEMENT MODE

Enter battery supplement mode V

I(OUT)

BSUP1

(battery supplements OUT current V

I(BAT)

> 2 V ≤ V

I(BAT)

in the presence of input source – 60 mV

I(OUT)

BSUP2

Exit battery supplement mode V

I(BAT)

> 2 V ≥ V

I(BAT)

– 20 mV

OUT PIN - SHORT CIRCUIT

Current source between BAT to OUT for

OSH1

BAT to OUT short-circuit recovery short-circuit recovery to 10 mA

I(OUT)

≤ V

I(BAT)

– 200 mV

SHAC

AC to OUT short-circuit limit V

I(OUT)

≤ 1 V 500 Ω

BAT PIN CHARGING – PRECHARGE

Precharge to fast-charge transition

(LOWV)

Voltage on BAT 2.9 3 3.1 V

threshold

De-glitch time for fast-charge to t

FALL

= 100 ns, 10 mV overdrive,

DGL(F)

22.5 ms

precharge transition

(4)

I(BAT)

decreasing below threshold

1 V < V

I(BAT)

< V

(LOWV)

, t < t

(PRECHG)

O(PRECHG)

Precharge range 10 150 mA

O(PRECHG)

= (K

(SET)

× V

(PRECHG)

)/ R

SET

(PRECHG)

Precharge set voltage 1 V < V

I(BAT)

< V

(LOWV)

, t < t

(PRECHG)

225 250 275 mV

BAT PIN CHARGING - CURRENT REGULATION

I (BAT)

> V

(LOWV)

, Mode = High

O(BAT)

Battery charge current range

(5)

OUT(BAT)

= (K

(SET)

× V

(SET)

/ R

SET

), 100 1000 1500 mA

(OUT) > V

(OUT-REG) + V

(DO-MAX)

PBAT

BAT to OUT pullup V

I (BAT)

< 1 V 1000 Ω

(1) This includes the quiescent current for the integrated LDO.

(2) V

(DPPM-SET)

is scaled up by the scale factor for controlling the output voltage V

(DPPM-REG)

(3) V

DO(max)

, dropout voltage is a function of the FET, R

DS(on)

, and drain current. The dropout voltage increases proportionally to the

increase in current.

(4) All de-glitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the

program current is reduced.

(5) When input current remains below 2 A, the battery charging current may be raised until the thermal regulation limits the charge current.

Product Folder Link(s): bq24070 bq24071

bq24070

bq24071

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

over junction temperature range (0 ° C ≤ T

≤ 125 ° C) and the recommended supply voltage range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Voltage on ISET1, V

VCC

≥ 4.35 V,

Battery charge current set

(SET)

I(OUT)

- V

I(BAT)

> V

(DO-MAX)

, 2.47 2.50 2.53 V

voltage

(6)

I(BAT)

> V

(LOWV)

100 mA ≤ I

O(BAT)

≤ 1.5 A 375 425 450

(SET)

Charge current set factor, BAT

10 mA ≤ I

O(BAT)

≤ 100 mA

(7)

300 450 600

USB MODE INPUT CURRENT LIMIT

ISET2 = Low 80 90 100

(USB)

USB input port current range mA

ISET2 = High 400 500

BAT PIN CHARGING VOLTAGE REGULATION, V

O (BAT-REG)

+ V

(DO-MAX)

< V

, I

TERM

< I

BAT(OUT)

≤ 1 A

Battery charge voltage 4.2 V

O(BAT-REG)

= 25 ° C – 0.5% 0.5%

Battery charge voltage regulation

accuracy

– 1% 1%

CHARGE TERMINATION DETECTION

Charge termination detection V

I(BAT)

> V

(RCH)

(TERM)

10 150 mA

range I

(TERM)

= (K

(SET)

× V

(TERM)

)/ R

SET

I(BAT)

> V

(RCH)

, Mode = High 230 250 270

Charge termination set voltage,

(TERM)

measured on ISET1

I(BAT)

> V

(RCH)

, Mode = Low 95 100 130

FALL

= 100 ns, 10 mV overdrive,

De-glitch time for termination

DGL(TERM)

CHG

increasing above or decreasing below 22.5 ms

detection

threshold

TEMPERATURE SENSE COMPARATORS

LTF

High voltage threshold Temp fault at V(TS) > V

LTF

2.465 2.500 2.535 V

HTF

Low voltage threshold Temp fault at V(TS) < V

HTF

0.485 0.500 0.515 V

Temperature sense current source 94 100 106 µ A

(TMR)

= 50 k Ω , V

I(BAT)

increasing or

De-glitch time for temperature fault

DGL(TF)

decreasing above and below; 22.5 ms

detection

(8)

100-ns fall time, 10-mv overdrive

BATTERY RECHARGE THRESHOLD

O(BAT-

O(BAT-REG)

RCH

Recharge threshold voltage

REG)

– 0.100 – 0.125

– 0.075

(TMR)

= 50 k Ω , V

I(BAT)

increasing

De-glitch time for recharge

DGL(RCH)

or decreasing below threshold, 22.5 ms

detection

(8)

100-ns fall time, 10-mv overdrive

STAT1, STAT2, AND PG, OPEN DRAIN (OD) OUTPUTS

(9)

= 5 mA, An external pullup

Low-level output saturation voltage 0.25 V

resistor ≥ 1 K required.

LKG

Input leakage current 1 5 µ A

ISET2, CE INPUTS

Low-level input voltage 0 0.4

High-level input voltage 1.4

Low-level input current, CE – 1

High-level input current, CE 1

µ A

Low-level input current, ISET2 V

ISET2

= 0.4 V – 20

High-level input current, ISET2 V

ISET2

= V

(CE-HLDOFF)

Holdoff time, CE CE going low only 4 6 ms

(6) For half-charge rate, V

(SET)

is 1.25 V ± 25 mV.

(7) Specification is for monitoring charge current via the ISET1 pin during voltage regulation mode, not for a reduced fast-charge level.

(8) All de-glitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the

program current is reduced.

(9) See Charger Sleep mode for PG (V

= V

) specifications.

Product Folder Link(s): bq24070 bq24071

评论收藏

内容反馈

颓废的兔子

2013-05-06

还好了，比较详细。有一定借鉴的地方
qdzlc1989

2017-12-08

就是两个芯片的datasheet而已
lijinke_0516

2012-07-27

好东西，有更详细的方案更好了

kyzf

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