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IR2136是功率MOSFET和IGBT专用栅极集成驱动电路
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2015-08-04
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IR2136是功率MOSFET和IGBT专用栅极集成驱动电路,它可以驱动工作在母线电压高达600 V的功率开关器件。它带有3个独立的高压侧和低压侧输出通道,其内部采用自举技术,仅需要一个直流电源,就可输出6路功率开关器件的驱动脉冲,仅需要一个直流电源,使其实现了对功率MOSFET和IGBT的最优驱动,简化了整个驱动电路的设计。而且IR2136驱动芯片内置死区电路,以及过流保护和欠压保护等功能。
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1
IR213(6,62,63,65,66,67,68)(J&S) & PbF
3-PHASE BRIDGE DRIVER
Packages
Description
The IR2136x (J&S) are high voltage, high
speed power MOSFET and IGBT drivers with
three independent high and low side
referenced output channels for 3-phase
applications. Proprietary HVIC technology
enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or
LSTTL outputs, down to 3.3 V logic. A current
trip function which terminates all six outputs
can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An
open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault
conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output
drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to
simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the
high side configuration which operates up to 600 V.
Part IR2136 IR21362 IR21363 IR21365 IR21366 IR21367 IR21368
Input Logic
___ ___
HIN, LIN
___
HIN, LIN
___ ___
HIN, LIN
___ ___
HIN, LIN
___ ___
HIN, LIN
___ ___
HIN, LIN
___ ___
HIN, LIN
Ton (typ.) 400 ns 400 ns 400 ns 400 ns 250 ns 250 ns 400 ns
Toff (typ.) 380ns 380 ns 380 ns 380 ns 180 ns 180 ns 380 ns
V
IH
(typ.) 2.7 V 2.7 V 2.7 V 2.7 V 2.0 V 2.0 V 2.0 V
V
IL
(typ.) 1.7 V 1.7 V 1.7 V 1.7 V 1.3 V 1.3 V 1.3 V
Vitrip+ 0.46 V 0.46 V 0.46 V 4.3 V 0.46 V 4.3 V 4.3 V
UVCC/BS+ 8.9 V 10.4 V 11.2 V 11.2 V 11.2 V 11.2 V 8.9 V
UVCC/BS- 8.2 V 9.4 V 11.0 V 11.0 V 11.0 V 11.0 V 8.2 V
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V (IR2136/
IR21368), 11.5 V to 20 V (IR21362D), or 12 V to 20 V
(IR21363/IR21365/IR21366/IR21367)
• Undervoltage lockout for all channels
• Over-current shutdown turns off all six drivers
• Independent 3 half-bridge drivers
• Matched propagation delay for all channels
• Cross-conduction prevention logic
• Low side output out of phase with inputs. High side outputs
out of phase (IR213(6,63, 65, 66, 67, 68)), or in phase
(IR21362) with inputs
• 3.3 V logic compatible
• Lower di/dt gate drive for better noise immunity
• Externally programmable delay for automatic fault clear
• All parts are LEAD-FREE
IR2136/IR21362/IR21363/IR21365/
IR21366/IR21367/IR21368 (J&S) & (PbF)
28-Lead SOIC 28-Lead PDIP
44-Lead PLCC w/o 12 Leads
Data Sheet No. PD60166 revU
Feature Comparison:
IR213(6,62,63,65,66,67,68)
Typical Connection
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2
IR213(6,62,63,65,66,67,68)(J&S) & PbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Recommended Operating Conditions
The input/output logic-timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V
S
offset ratings are tested
with all supplies biased at a 15 V differential.
Symbol Definition Min Max Units
IR213(6,68) V
S1,2,3
+10 V
S1,2,3
+ 20
IR21362 V
S1,2,3
+11.5 V
S1,2,3
+ 20
V
B1,2,3
High side floating supply voltage
IR213(6,63,65,66,67) V
S1,2,3
+12 V
S1,2,3
+ 20
V
S 1,2,3
High side floating supply offset voltage Note 1 600
V
HO 1,2,3
High side output voltage V
S1,2,3
V
B1,2,3
V
LO1,2,3
Low side output voltage 0 V
CC
IR213(6,68) 10 20
IR21362 11.5 20
V
CC
Low side and logic fixed supply
voltage
IR213(6,63,65,66,67) 12 20
V
SS
Logic ground -5 5
V
FLT
FAULT output voltage
V
SS
V
CC
V
RCIN
RCIN input voltage V
SS
V
CC
V
Note 1: Logic operational for V
S
of (COM - 5 V) to (COM + 600 V). Logic state held for V
S
of (COM - 5 V) to (COM – V
BS
).
(Please refer to the Design Tip DT97-3 for more details).
Note 2: All input pins and the ITRIP and EN pins are internally clamped with a 5.2 V zener diode.
Symbol Definition Min Max Units
V
S
High side offset voltage V
B 1,2,3
- 25 V
B 1,2,3
+ 0.3
V
B
High side floating supply voltage -0.3 625
V
HO
High side floating output voltage V
S1,2,3
- 0.3 V
B 1,2,3
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
SS
Logic ground V
CC
- 25 V
CC
+ 0.3
V
LO1,2,3
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Input voltage LIN, HIN, ITRIP, EN V
SS
-0.3
Lower of
(V
SS
+ 15) or
V
CC
+ 0.3)
V
RCIN
RCIN input voltage V
SS
-0.3 V
CC
+ 0.3
V
FLT
FAULT output voltage
V
SS
-0.3 V
CC
+ 0.3
V
dV/dt
Allowable offset voltage slew rate
— 50
V/ns
(28 lead PDIP)
— 1.5
(28 lead SOIC)
— 1.6
P
D
Package power dissipation
@ T
A
≤ +25 °C
(44 lead PLCC)
— 2.0
W
(28 lead PDIP)
— 83
(28 lead SOIC)
— 78
Rth
JA
Thermal resistance, junction to
ambient
(44 lead PLCC)
— 63
°C/W
T
J
Junction temperature — 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) — 300
°C
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3
IR213(6,62,63,65,66,67,68)(J&S) & PbF
Recommended Operating Conditions - (Continued)
The input/output logic-timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V
S
offset ratings are tested
with all supplies biased at a 15 V differential.
Symbol
Definition
Min Max
Units
V
ITRIP
ITRIP input voltage V
SS
V
SS
+ 5
V
IN
Logic input voltage LIN, HIN (IR213(6,63,65,66,67,68)),
HIN (IR21362), EN
V
SS
V
SS
+ 5
V
T
A
Ambient temperature -40 125 °C
Note 2: All input pins and the ITRIP and EN pins are internally clamped with a 5.2 V zener diode.
Static Electrical Characteristics
V
BIAS
(V
CC
,V
BS1,2,3
) = 15 V unless otherwise specified. The V
IN
, V
TH
, and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM and V
S1,2,3
and are applicable to the respective output leads: HO1,2,3 and LO1,2,3.
Symbol Definition Min Typ Max Units Test Conditions
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR213(6,63,65)
Logic “1” input voltage HIN1,2,3 IR21362
3.0
—
—
V
IH
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR213(66,67,68)
2.5 — —
Logic “1” input Voltage LIN1,2,3, HIN1,2,3
IR213(6,63,65)
Logic “0” input voltage HIN1,2,3 IR21362
V
IL
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR213(66,67,68)
—
— 0.8
V
EN,TH+
Enable positive going threshold — — 3
V
EN,TH-
Enable negative going threshold 0.8 — —
IR2136(2)(3)(6) 0.37 0.46 0.55
V
IT,TH+
ITRIP positive going
threshold
IR21365(7)(8) 3.85 4.30 4.75
IR2136(2)(3)(6) — 0.07 —
V
IT,HYS
ITRIP input hysteresis
IR21365(7)(8) — .15 —
V
RCIN, TH+
RCIN positive going threshold — 8 —
V
RCIN, HYS
RCIN input hysteresis — 3 —
V
OH
High level output voltage, V
BIAS
- V
O
— 0.9 1.4
V
OL
Low level output voltage, V
O
— 0.4 0.6
Io = 20 mA
IR2136(8) 8.0 8.9 9.8
IR21362 9.6 10.4 11.2
V
CCUV+
V
BSUV+
V
CC
and V
BS
supply
undervoltage positive going
threshold
IR21363(5)(6)(7) 10.6 11.1 11.6
V
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4
IR213(6,62,63,65,66,67,68)(J&S) & PbF
Static Electrical Characteristics - (Continued)
V
BIAS
(V
CC
,V
BS1,2,3
) = 15 V unless otherwise specified. The V
IN
, V
TH
, and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM and V
S1,2,3
and
are applicable to the respective output leads: HO1,2,3 and LO1,2,3.
Symbol Definition Min Typ Max Units Test Conditions
IR2136(8) 7.4 8.2 9.0
IR21362 8.6 9.4 10.2
V
CCUV-
V
BSUV-
V
CC
and V
BS
supply
undervoltage negative going
threshold
IR2136(3,5,6,7) 10.4 10.9 11.4
IR2136 0.3 0.7 —
IR21362 0.5 1.0 —
V
CCUVH
V
BSUVH
V
CC
and V
BS
supply
undervoltage lockout
hysteresis
IR2136(3,5) — 0.2 —
V
I
LK
Offset supply leakage current — — 50
V
B1,2,3
= V
S1,2,3
=
600 V
I
QBS
Quiescent V
BS
supply current — 70 120
µA
I
QCC
Quiescent V
CC
supply current — 1.6 2.3 mA
V
IN
= 0 V or 5 V
V
IN,CLAMP
Input clamp voltage (HIN, LIN, ITRIP and EN) 4.9 5.2 5.5 V I
IN
=100 µA
IR2136(2,3,5) — 200 300
I
LIN+
Input bias current (LOUT = HI)
IR2136(6,7,8) — 30 100
V
LIN
= 5 V
IR2136(2,3,5) — 100 220
I
LIN-
Input bias current (LOUT = LO)
IR2136(6,7,8) — 0 1
V
LIN
= 0 V
IR2136(3,5) — 200 300
IR21362 — 30 100
I
HIN+
Input bias current (HOUT = HI)
IR2136(6,7,8) — 30 100
V
HIN
= 5 V
IR2136(3,5) — 100 220
I
HIN-
Input bias current (HOUT = LO)
IR2136(2,6,7,8) — 0 1
V
HIN
= 0 V
I
ITRIP+
“High” ITRIP input bias current — 30 100 V
ITRIP
= 5 V
I
ITRIP-
“Low” ITRIP input bias current — 0 1 V
ITRIP
= 0 V
I
EN+
“High” ENABLE input bias current — 30 100 V
ENABLE
= 5 V
I
EN-
“Low” ENABLE input bias current — 0 1 V
ENABLE
=0 V
I
RCIN
RCIN input bias current — 0 1
µA
Vrcin= 0 V or
15 V
I
O+
Output high short circuit pulsed current 120 200 —
Vo =0 V,
PW ≤10 µs
I
O-
Output low short circuit pulsed current 250 350 —
mA
Vo =15 V,
PW ≤10 µs
R
on_RCIN
RCIN low on resistance — 50 100
R
on_FAULT
FAULT low on resistance
— 50 100
Ω
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5
IR213(6,62,63,65,66,67,68)(J&S) & PbF
Dynamic Electrical Characteristics
V
CC
= V
BS
= V
BIAS
= 15 V, V
S1,2,3
= V
SS
= COM, T
A
= 25 °C and CL = 1000 pF unless otherwise specified.
Symbol Definition Min Typ Max Units
Test
Conditions
IR2136(2,3,5,8) 300 425 550
t
on
Turn-on propagation delay
IR2136(6,7) — 250 —
IR2136(2,3,5,8) 250 400 550
t
off
Turn-off propagation delay
IR2136(6,7) — 180 —
t
r
Turn-on rise time — 125 190
t
f
Turn-off fall time — 50 75
V
IN
= 0 V & 5 V
IR2136(2,3,5,8) 300 450 600
t
EN
ENABLE low to output shutdown
propagation delay
IR2136(6,7) 100 250 400
V
IN,
V
EN
= 0 V
or 5 V
t
ITRIP
ITRIP to output shutdown propagation delay 500 750 1000 V
ITRIP
= 5 V
t
bl
ITRIP blanking time 100 150 —
t
FLT
ITRIP to FAULT propagation delay
400 600 800
V
IN
= 0 V or 5 V
V
ITRIP
= 5 V
t
FILIN
Input filter time (HIN, LIN)
(IR213(6,62,63,65,68) only)
100 200 —
ns
V
IN
= 0 V & 5 V
t
FLTCLR
FAULT clear time RCIN: R = 2 MΩ, C = 1 nF 1.3 1.65 2 ms
V
IN
= 0 V or 5 V
V
ITRIP
= 0 V
DT Deadtime 220 290 360 V
IN
= 0 V & 5 V
MT Matching delay ON and OFF — 40 75
MDT
Matching delay, max (t
on
, t
off
) – min (t
on
, t
off
),
(t
on
, t
off
are applicable to all 3 channels)
— 25 70
External dead
time >400 ns
PM Output pulse width matching (pwin-pwout) (Fig.2) — 40 75
ns
Note: For high side PWM, HIN pulse width must be ≥ 1 µs.
VCC VBS ITRIP ENABLE FAULT LO1,2,3 HO1,2,3
<UVCC X X X 0 (note 1) 0 0
15 V <UVBS 0 V 5 V high imp LIN1,2,3 0
15 V 15 V 0 V 5 V high imp LIN1,2,3 HIN1,2,3
15 V 15 V >V
ITRIP
5 V 0 (note 2) 0 0
15 V 15 V 0 V 0 V high imp 0 0
Note 1: A shoot-through prevention logic prevents LO1,2,3 and HO1,2,3 for each channel from turning on simultaneously.
Note 2: UVCC is not latched, when V
CC
> UV
CC
, FAULT returns to high impedance.
Note 3: When ITRIP < V
ITRIP
, FAULT returns to high-impedance after RCIN pin becomes greater than 8 V (@ V
CC
= 15 V).
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