中科院研究生院课程：VLSI测试与可测试性设计
第9讲 存储器诊断与BISR
李华伟
中科院计算技术研究所
Email: lihuawei@ict.ac.cn
http://test.ict.ac.cn
EE141
VLSI Test Principles and Architectures
Ch. 9 - Memory Diagnosis & BISR
1
From fault detection to defect toleranceFrom fault detection to defect tolerance
EE141
VLSI Test Principles and Architectures
Ch. 9 - Memory Diagnosis & BISR
2
Memory yield is a challengeMemory yield is a challenge
12x12mm
2
0.13 um
EE141
VLSI Test Principles and Architectures
Ch. 9 - Memory Diagnosis & BISR
3
CPUs with memor
y
re
p
airCPUs with memor
y
re
p
air
ypyp
Company Year CPU Tech (um) Freq (MHz) BISR Overhead
1995 21164 0.35 366~625 Laser 2%
Alpha 1998 21264 0.18/0.28 600~1250 Laser 0.2%
2003 21364 0.13/0.88 1200~1700 Laser -
AMD
1997
K6
035
166
~
500
Laser
-
AMD
1997
K6
0
.
35
166 500
Laser
SUN 1999 UltraSparc 3 0.15 500~1590 Laser -
Motorola
- PowerPC7400 0.2 700 Laser -
MPC750
029
Lser
-
MPC750
0
.
29
-
L
a
ser
-
IBM 2005 UltraSparc T1 0.09 1200 Efuse -
IBM/Tosh
ib /S
2005
Cell
009
4600
--
ib
a
/S
ony
2005
Cell
0
.
09
4600
EE141
VLSI Test Principles and Architectures
Ch. 9 - Memory Diagnosis & BISR
4
Chapter Chapter 99
M
e
m
o
r
y
Di
ag
n
os
i
s
a
n
d
B
u
il
t
M
e
m
o
r
y
Di
ag
n
os
i
s
a
n
d
B
u
il
t
--In In
e oy agossad ute oy agossad ut
SelfSelf--RepairRepair
EE141
VLSI Test Principles and Architectures
Ch. 9 - Memory Diagnosis & BISR
5
