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MOS管

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IRLR/U3103PbF

HEXFET

Power MOSFET

DSS

= 30V

DS(on)

= 0.019Ω

= 55A

Description

12/7/04

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 55

@ T

= 100°C Continuous Drain Current, V

@ 10V 39 A

Pulsed Drain Current  220

= 25°C Power Dissipation 107 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 16 V

Single Pulse Avalanche Energy 240 mJ

Avalanche Current 34 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θJA

Junction-to-Ambient (PCB mount) ** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

D-PAK

TO-252AA

I-PAK

TO-251AA

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR3103)

l Straight Lead (IRLU3103)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

PD - 95085A

www.irf.com 1

IRLR/U3103PbF

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V V

= 0V, I

= 250µA

∆V

(BR)DSS

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, I

= 1mA

––– ––– 0.019 V

= 10V, I

= 33A 

––– ––– 0.024 V

= 4.5V, I

= 25A 

GS(th)

Gate Threshold Voltage 1.0 ––– ––– V V

= V

, I

= 250µA

Forward Transconductance 23 ––– ––– S V

= 25V, I

= 34A

––– ––– 25

µA

= 30V, V

= 0V

––– ––– 250 V

= 18V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage ––– ––– 100

= 16V

Gate-to-Source Reverse Leakage ––– ––– -100 V

= -16V

Total Gate Charge ––– ––– 50 I

= 34A

Gate-to-Source Charge ––– ––– 14 nC V

= 24V

Gate-to-Drain ("Miller") Charge ––– ––– 28 V

= 4.5V, See Fig. 6 and 13 

d(on)

Turn-On Delay Time ––– 9.0 ––– V

= 15V

Rise Time ––– 210 –––

= 34A

d(off)

Turn-Off Delay Time ––– 20 ––– R

= 3.4Ω, V

= 4.5V

Fall Time ––– 54 ––– R

= 0.43Ω, See Fig. 10 

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance ––– 1600 ––– V

= 0V

oss

Output Capacitance ––– 640 ––– pF V

= 25V

rss

Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GSS

Internal Source Inductance ––– 7.5 –––

DS(on)

Static Drain-to-Source On-Resistance

Internal Drain Inductance ––– 4.5 –––

DSS

Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units Conditions

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

Diode Forward Voltage ––– ––– 1.3 V T

= 25°C, I

= 28A, V

= 0V 

Reverse Recovery Time ––– 81 120 ns T

= 25°C, I

= 34A

Reverse RecoveryCharge ––– 210 310 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

55

220

Notes:

 V

= 15V, starting T

= 25°C, L = 300µH

= 25Ω, I

= 34A. (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

 I

≤ 34A, di/dt ≤ 140A/µs, V

≤ V

(BR)DSS

≤ 175°C

 This is applied for I-PAK, L

of D-PAK is measured between lead and

center of die contact

 Uses IRL3103 data and test conditions

 Pulse width ≤ 300µs; duty cycle ≤ 2%

 Calculated continuous current based on maximum allowable junction

temperature; Package limitation current = 20A

Ω

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