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74系列的几个芯片资料.rar （4个子文件）

74系列的几个芯片资料

74HC164.pdf 51KB

74HC595.pdf 122KB

74HC245.pdf 131KB

74LS154.pdf 52KB

1. General description

The 74HC245; 74HCT245 is a high-speed Si-gate CMOS device and is pin compatible

with Low-Power Schottky TTL (LSTTL).

The 74HC245; 74HCT245 is an octal transceiver featuring non-inverting 3-state bus

compatible outputs in both send and receive directions. The 74HC245; 74HCT245

features an output enable input (OE) for easy cascading and a send/receive input (DIR)

for direction control. OE controls the outputs so that the buses are effectively isolated.

The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true

(non-inverting) outputs.

2. Features

■ Octal bidirectional bus interface

■ Non-inverting 3-state outputs

■ Multiple package options

■ Complies with JEDEC standard no. 7A

■ ESD protection:

◆ HBM EIA/JESD22-A114-B exceeds 2000 V

◆ MM EIA/JESD22-A115-A exceeds 200 V

■ Speciﬁed from −40 °Cto+85°C and from −40 °C to +125 °C

3. Quick reference data

74HC245; 74HCT245

Octal bus tranceiver; 3-state

Rev. 03 — 31 January 2005 Product data sheet

Table 1: Quick reference data

GND = 0 V; T

amb

=25

C; t

= 6 ns.

Symbol Parameter Conditions Min Typ Max Unit

Type 74HC245

PHL

, t

PLH

propagation delay

An to Bn or Bn to An

=15pF;

=5V

-7-ns

input capacitance - 3.5 - pF

I/O

input/output capacitance - 10 - pF

power dissipation

capacitance per

transceiver

= GND to V

[1]

-30-pF

Type 74HCT245

PHL

, t

PLH

propagation delay

An to Bn or Bn to An

=15pF;

=5V

-10-ns

Product data sheet Rev. 03 — 31 January 2005 2 of 22

Philips Semiconductors

74HC245; 74HCT245

Octal bus tranceiver; 3-state

[1] C

is used to determine the dynamic power dissipation (P

in µW):

× V

× f

× N+∑ (C

× V

× f

) where:

= input frequency in MHz;

= output frequency in MHz;

= output load capacitance in pF;

= supply voltage in V;

N = number of inputs switching;

∑ (C

× V

× f

) = sum of outputs.

4. Ordering information

input capacitance - 3.5 - pF

I/O

input/output capacitance - 10 - pF

power dissipation

capacitance per

transceiver

= GND to

− 1.5 V

[1]

-30-pF

Table 1: Quick reference data

…continued

GND = 0 V; T

amb

=25

C; t

= 6 ns.

Symbol Parameter Conditions Min Typ Max Unit

Table 2: Ordering information

Type number Package

Temperature range Name Description Version

74HC245N −40 °C to +125 °C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1

74HC245D −40 °C to +125 °C SO20 plastic small outline package; 20 leads;

body width 7.5 mm

SOT163-1

74HC245PW −40 °C to +125 °C TSSOP20 plastic thin shrink small outline package; 20 leads;

body width 4.4 mm

SOT360-1

74HC245DB −40 °C to +125 °C SSOP20 plastic shrink small outline package; 20 leads;

body width 5.3 mm

SOT339-1

74HC245BQ −40 °C to +125 °C DHVQFN20 plastic dual-in-line compatible thermal enhanced

very thin quad ﬂat package no leads; 20 terminals;

body 2.5 × 4.5 × 0.85 mm

SOT764-1

74HCT245N −40 °C to +125 °C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1

74HCT245D −40 °C to +125 °C SO20 plastic small outline package; 20 leads;

body width 7.5 mm

SOT163-1

74HCT245PW −40 °C to +125 °C TSSOP20 plastic thin shrink small outline package; 20 leads;

body width 4.4 mm

SOT360-1

74HCT245DB −40 °C to +125 °C SSOP20 plastic shrink small outline package; 20 leads;

body width 5.3 mm

SOT339-1

74HCT245BQ −40 °C to +125 °C DHVQFN20 plastic dual-in-line compatible thermal enhanced

very thin quad ﬂat package no leads; 20 terminals;

body 2.5 × 4.5 × 0.85 mm

SOT764-1

Product data sheet Rev. 03 — 31 January 2005 3 of 22

Philips Semiconductors

74HC245; 74HCT245

Octal bus tranceiver; 3-state

5. Functional diagram

Fig 1. Logic symbol Fig 2. IEC logic symbol

DIR

mna174

173

119

3EN1

3EN2

mna175

Product data sheet Rev. 03 — 31 January 2005 4 of 22

Philips Semiconductors

74HC245; 74HCT245

Octal bus tranceiver; 3-state

6. Pinning information

6.1 Pinning

6.2 Pin description

(1) The die substrate is attached to this

pad using conductive die attach

material. It can not be used as supply

pin or input

Fig 3. Pin conﬁguration DIP20, SO20,

SSOP20 and TSSOP20

Fig 4. Pin conﬁguration DHVQFN20

245

DIR V

A0 OE

A1 B0

A2 B1

A3 B2

A4 B3

A5 B4

A6 B5

A7 B6

GND B7

001aac431

001aac432

245

GND

(1)

Transparent top view

A5 B4

A4 B3

A3 B2

A2 B1

A1 B0

A0 OE

GND

DIR

8 13

7 14

6 15

5 16

4 17

3 18

2 19

terminal 1

index area

Table 3: Pin description

Symbol Pin Description

DIR 1 direction control

A0 2 data input/output

A1 3 data input/output

A2 4 data input/output

A3 5 data input/output

A4 6 data input/output

A5 7 data input/output

A6 8 data input/output

A7 9 data input/output

GND 10 ground (0 V)

B7 11 data input/output

B6 12 data input/output

B5 13 data input/output

B4 14 data input/output

B3 15 data input/output

B2 16 data input/output

Product data sheet Rev. 03 — 31 January 2005 5 of 22

Philips Semiconductors

74HC245; 74HCT245

Octal bus tranceiver; 3-state

7. Functional description

7.1 Function table

[1] H = HIGH voltage level;

L = LOW voltage level;

X = don’t care;

Z = high-impedance OFF-state.

8. Limiting values

[1] For DIP20 packages: above 70 °C, P

tot

derates linearly with 12 mW/K.

For SO20 packages: above 70 °C, P

tot

derates linearly with 8 mW/K.

For SSOP20 and TSSOP20 packages: above 60 °C, P

tot

derates linearly with 5.5 mW/K.

For DHVQFN20 packages: above 60 °C, P

tot

derates linearly with 4.5 mW/K.

B1 17 data input/output

B0 18 data input/output

OE 19 output enable input (active LOW)

20 supply voltage

Table 3: Pin description

…continued

Symbol Pin Description

Table 4: Function table

[1]

Input Input/output

OE DIR An Bn

L L A = B input

L H input B = A

HXZZ

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to

GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

supply voltage −0.5 +7 V

input diode current V

< −0.5 V or V

+ 0.5 V - ±20 mA

output diode current V

< −0.5 V or

+ 0.5 V

- ±20 mA

output source or sink

current

= −0.5 V to V

+ 0.5 V - ±35 mA

, I

GND

or GND current - ±70 mA

stg

storage temperature −65 +150 °C

tot

total power dissipation

[1]

DIP20 package - 750 mW

SO20, SSOP20,

TSSOP20 and

DHVQFN20 packages

- 500 mW

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