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TC58NVG0S3HTA00
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TC58NVG0S3HTA00_datasheet_en_20120831
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TC58NVG0S3HTA00
2012-08-31C
1
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E
2
PROM
DESCRIPTION
The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E
2
PROM) organized as (2048 128) bytes 64 pages 1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
x8
Memory cell array 2176 64K 8
Register 2176 8
Page size 2176 bytes
Block size (128K 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
Mode control
Serial input/output
Command control
Number of valid blocks
Min 1004 blocks
Max 1024 blocks
Power supply
V
CC
2.7V to 3.6V
Access time
Cell array to register 25 s max
Serial Read Cycle 25 ns min (CL=50pF)
Program/Erase time
Auto Page Program 300 s/page typ.
Auto Block Erase 2.5 ms/block typ.
Operating current
Read (25 ns cycle) 30 mA max.
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 50 A max
Package
TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
8 bit ECC for each 512Byte is required.
TC58NVG0S3HTA00
2012-08-31C
2
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
I/O1 to I/O8
I/O port
CE
Chip enable
WE
Write enable
RE
Read enable
CLE
Command latch enable
ALE
Address latch enable
WP
Write protect
BY/RY
Ready/Busy
V
CC
Power supply
V
SS
Ground
NC
No Connection
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
V
CC
V
SS
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
1 48
2 47
3 46
4 45
5 44
6 43
7 42
8 41
9 40
10 39
11 38
12 37
13 36
14 35
15 34
16 33
17 32
18 31
19 30
20 29
21 28
22 27
23 26
24 25
NC
NC
NC
NC
NC
NC
BY/RY
RE
CE
NC
NC
V
CC
V
SS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
8
8
TC58NVG0S3HTA00
TC58NVG0S3HTA00
2012-08-31C
3
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
V
CC
Power Supply Voltage
0.6 to 4.6
V
V
IN
Input Voltage
0.6 to 4.6
V
V
I/O
Input /Output Voltage
0.6 to V
CC
0.3 ( 4.6 V)
V
P
D
Power Dissipation
0.3
W
T
SOLDER
Soldering Temperature (10 s)
260
°C
T
STG
Storage Temperature
55 to 150
°C
T
OPR
Operating Temperature
0 to 70
°C
CAPACITANCE
*
(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
MAX
UNIT
C
IN
Input
V
IN
0 V
10
pF
C
OUT
Output
V
OUT
0 V
10
pF
* This parameter is periodically sampled and is not tested for every device.
I/O
Control circuit
Status register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
Control circuit
HV generator
Row address decoder
Logic control
BY/RY
V
CC
I/O1
V
SS
I/O8
CE
CLE
ALE
WE
RE
BY/RY
Row address buffer
decoder
to
WP
Address register
TC58NVG0S3HTA00
2012-08-31C
4
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
N
VB
Number of Valid Blocks
1004
1024
Blocks
NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
V
CC
Power Supply Voltage
2.7
3.6
V
V
IH
High Level input Voltage
Vcc x 0.8
V
CC
0.3
V
V
IL
Low Level Input Voltage
0.3*
Vcc x 0.2
V
* 2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS
(Ta 0 to 70℃, V
CC
2.7 to 3.6V)
SYMBOL
PARAMETER
CONDITION
MIN
TYP.
MAX
UNIT
I
IL
Input Leakage Current
V
IN
0 V to V
CC
10
A
I
LO
Output Leakage Current
V
OUT
0 V to V
CC
10
A
I
CCO1
Serial Read Current
CE
V
IL
, I
OUT
0 mA, tcycle 25 ns
30
mA
I
CCO2
Programming Current
30
mA
I
CCO3
Erasing Current
30
mA
I
CCS
Standby Current
CE
V
CC
0.2 V,
WP
0 V/V
CC
50
A
V
OH
High Level Output Voltage
I
OH
0.1 mA
Vcc – 0.2
V
V
OL
Low Level Output Voltage
I
OL
0.1 mA
0.2
V
I
OL
(
BY/RY
)
Output current of
BY/RY
pin
V
OL
0.2 V
4
mA
TC58NVG0S3HTA00
2012-08-31C
5
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta 0 to 70℃, V
CC
2.7 to 3.6V)
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
CLS
CLE Setup Time
12
ns
t
CLH
CLE Hold Time
5
ns
t
CS
CE
Setup Time
20
ns
t
CH
CE
Hold Time
5
ns
t
WP
Write Pulse Width
12
ns
t
ALS
ALE Setup Time
12
ns
t
ALH
ALE Hold Time
5
ns
t
DS
Data Setup Time
12
ns
t
DH
Data Hold Time
5
ns
t
WC
Write Cycle Time
25
ns
t
WH
WE
High Hold Time
10
ns
t
WW
WP
High to
WE
Low
100
ns
t
RR
Ready to
RE
Falling Edge
20
ns
t
RW
Ready to
WE
Falling Edge
20
ns
t
RP
Read Pulse Width
12
ns
t
RC
Read Cycle Time
25
ns
t
REA
RE
Access Time
20
ns
tCEA
CE
Access Time
25
ns
t
CLR
CLE Low to
RE
Low
10
ns
t
AR
ALE Low to
RE
Low
10
ns
t
RHOH
RE
High to Output Hold Time
25
ns
t
RLOH
RE
Low to Output Hold Time
5
ns
t
RHZ
RE
High to Output High Impedance
60
ns
t
CHZ
CE
High to Output High Impedance
20
ns
t
CSD
CE
High to ALE or CLE Don’t Care
0
ns
t
REH
RE
High Hold Time
10
ns
t
IR
Output-High-impedance-to-
RE
Falling Edge
0
ns
t
RHW
RE
High to
WE
Low
30
ns
t
WHC
WE
High to
CE
Low
30
ns
t
WHR
WE
High to
RE
Low
60
ns
t
R
Memory Cell Array to Starting Address
25
s
t
DCBSYR1
Data Cache Busy in Read Cache (following 31h and
3Fh)
25
s
t
DCBSYR2
Data Cache Busy in Page Copy (following 3Ah)
30
s
t
WB
WE
High to Busy
100
ns
t
RST
Device Reset Time (Ready/Read/Program/Erase)
5/5/10/500
s
*1: tCLS and tALS can not be shorter than tWP
*2: tCS should be longer than tWP + 8ns.
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