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flash手册（芯片管脚图）

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FLASH MEMORY

K9F1208D0B

K9F1208U0B

K9F1208Q0B

Advance

Document Title

64M x 8 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

Remark

Advance

History

Initial issue.

Draft Date

Apr. 24th 2004

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

FLASH MEMORY

K9F1208D0B

K9F1208U0B

K9F1208Q0B

Advance

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15µs(Max.)

- Serial Page Access : 50ns(Min.)

64M x 8 Bit NAND Flash Memory

• Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as

K9F1208U0B-Y,P(TSOP1) except package type.

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its

NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed

in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page

can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command

input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal

verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s extended reliability of

100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an

optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring

non-volatility.

PRODUCT LIST

Part Number Vcc Range PKG Type

K9F1208Q0B-D,H 1.70 ~ 1.95V FBGA

K9F1208D0B-Y,P

2.4 ~ 2.9V

TSOP1

K9F1208D0B-D,H FBGA

K9F1208U0B-Y,P

2.7 ~ 3.6V

TSOP1

K9F1208U0B-D,H FBGA

K9F1208U0B-V,F WSOP1

剩余44页未读，继续阅读

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往事不再如风

2013-03-22

这是三星的一块flash的datasheet，只是在使用的时候才能用的。可以了解下。
sqlwn

2014-08-14

正需要这个在网上找了很长时间了！
Program_1234

2016-07-12

文档很好！
小池编程的博客

2014-08-07

东西挺实用的

zzq09

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