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在保持或增加超过1024条IO线的同时,HBM第4代预计将具有12.8Gb/s引脚数据速率,以进一步提高带宽。 为了使信道响应平坦化并减轻来自插入器信道的符号间干扰(ISI),HBM第4代需要一种新的均衡器,该均衡器满足以下要求:(1)ISI消除效果高达6.4GHz或更高;(2) 低功耗;(3) 小面积消耗。 在本文中,我们首先提出了一种用于HBM第4代I/O的混合均衡器(HE),该均衡器具有插入式无源均衡器(OIPE)和1抽头判决反馈均衡器(DFE)。 通过共同设计OIPE和DFE,所提出的HE可以克服1抽头DFE、长尾ISI问题和OIPE、增益下降问题的缺点。 此外,它可以提供以下优点:(1)通过减少DFE的抽头数量来实现低功耗;(2)通过在插入器而不是芯片上实现无源均衡器来实现小面积功耗。 所提出的HE通过成功打开10mm长的插入器通道的闭眼图,实现了12.8Gb/s宽I/O线的数据传输。
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Information Classification: General
DesignCon 2021
Design of a Hybrid Equalizer for
12.8-Gb/s High Bandwidth
Memory Gen. 4
Yeseul Jeon, MIT
yjeon@mit.edu, +1-617-803-2147
Chongsoo Jung, KAIST
Byoung Mo Moon, Samsung Electronics
Minkyu Je, KAIST
Information Classification: General
Abstract
While maintaining or increasing the number of IO lines over 1024, HBM gen. 4 is
expected to have 12.8-Gb/s pin data rate for further bandwidth improvement. In order to
flatten channel response and alleviate inter-symbol interference (ISI) from on-interposer
channel, HBM gen. 4 requires a new equalizer which satisfies the following
requirements: (1) ISI cancellation effects up to 6.4 GHz or more; (2) low power
consumption; (3) small area consumption.
In this paper, we firstly propose a hybrid equalizer (HE) with an on-interposer
passive equalizer (OIPE) and a 1-tap decision-feedback equalizer (DFE) for HBM gen. 4
I/O. By co-designing an OIPE and a DFE, the proposed HE can overcome the
disadvantage of a 1-tap DFE, long-tail ISI issue, and that of an OIPE, gain drop issue.
Furthermore, it can provide the merits of (1) low power consumption by reducing the
number of taps of DFE and (2) small area consumption by implementing passive
equalizers on the interposer instead of chip. The proposed HE enables 12.8-Gb/s data
transfer of wide I/O lines by successfully opening the closed eye diagram of the 10-mm
long on-interposer channel.
Authors Biography
Yeseul Jeon received the B.S., M.S. and Ph.D. degrees in electrical engineering from the
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in
2015 and 2021, respectively.
She is now with Massachusetts Institute of Technology (MIT), Cambridge, MA, USA as
a post-doctoral associate. Her research interests include energy-efficient analog and
mixed-signal circuits including wireline and wireless communication ICs and 3-D ICs for
emerging applications such as biomedical devices, wireless sensor nodes and memory
devices. She received IEEE SSCS Rising Star 2020 Award.
Chongsoo Jung received the B.S. and M.S. degrees in electrical engineering from the
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in
2015 and 2017, respectively. He is currently working toward the Ph.D. degree in the
same school at KAIST.
His research interests include high-speed I/O interfaces, low-power body-channel-
communication (BCC) transceiver design, and low-power clock-generation circuits for
duty-cycled systems.
Information Classification: General
Byoung Mo, Moon received the BS degree from the Seoul National University of
Science and Technology in 1995, the MS degree from the Seoul National University in
1997, and the PhD degree from the Seoul National University in 2009. In 1997, he joined
the Memory Division, Samsung Electronics, Hwasung, Korea, where he has been
involved in DRAM circuit design. After his Ph.D., he rejoined Samsung Electronics in
2009, where he has worked on low-power DRAM and HBM I/O design. Dr. Moon firstly
proposed the mobile low power interface, LVSTL (Low Voltage Swing Termination
Logic) of LPDDR4, and has the related patents with other co-workers. His main interests
are high-speed low I/O interface and HBM Gen3 standardization.
Minkyu Je received the M.S. and Ph.D. degrees, both in Electrical Engineering and
Computer Science, from Korea Advanced Institute of Science and Technology (KAIST),
Daejeon, Korea, in 1998 and 2003, respectively. He is currently an Associate Professor in
the School of Electrical Engineering at Korea Advanced Institute of Science and
Technology (KAIST), Korea. His main research areas are advanced IC platform
development including smart sensor interface ICs and ultra-low-power wireless
communication ICs, as well as microsystem integration leveraging the advanced IC
platform for emerging applications such as intelligent miniature biomedical devices,
ubiquitous wireless sensor nodes, and future mobile devices. He is an author of 5 book
chapters, and has more than 260 peer-reviewed international conference and journal
publications in the areas of sensor interface IC, wireless IC, biomedical microsystem, 3D
IC, device modeling and nanoelectronics. He also has more than 40 patents issued or
filed. He has served on the Technical Program Committee and Organizing Committee for
various international conferences, symposiums and workshops including IEEE
International Solid-State Circuits Conference (ISSCC), IEEE Asian Solid-State Circuits
Conference (A-SSCC) and IEEE Symposium on VLSI Circuits (SOVC).
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