南京航空航天大学航空电源重点实验室
The practical realization of the power diode:
•
n
+
substrate. 基区 . cathode
•
n
-
epitaxial. 外延层 . thickness dependent upon breakdown voltag
e
•
p+ anode
Basic Structure & I-V Characteristics
n
-
n
+
p
+
A
K
W
d
•
Cross-sectional area to vary according to t
he current the device to carry
•
n- epi.:drift region, to absorb the depletion
layer of the reverse-biased p
+
n
-
junction; bu
t adding significant ohmic resistance when t
he junction forward biased
