ON 場效應管
需积分: 0 6 浏览量
2012-12-27
08:57:59
上传
评论
收藏 142KB PDF 举报
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 0
1 Publication Order Number:
NTMS4937N/D
NTMS4937N
Power MOSFET
30 V, 13.6 A, N−Channel, SO−8
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Points of Loads
• Power Load Switch
• Motor Controls
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
11.2
A
T
A
= 70°C 9.0
Power Dissipation R
q
JA
(Note 1)
Steady
State
T
A
= 25°C P
D
1.36 W
Continuous Drain
Current R
q
JA
(Note 2)
Steady
State
T
A
= 25°C
I
D
8.6
A
T
A
= 70°C 6.9
Power Dissipation R
q
JA
(Note 2)
T
A
= 25°C P
D
0.81 W
Continuous Drain
Current R
q
JA
, t v 10 s
(Note 1)
Steady
State
T
A
= 25°C
I
D
13.6
A
T
A
= 70°C 11
Power Dissipation
R
q
JA
, t v 10 s(Note 1)
Steady
State
T
A
= 25°C P
D
2.0 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
112 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
2.1 A
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 13 A
pk
, L = 1.0 mH, R
G
= 25 W)
E
AS
84.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
91.9
°C/W
Junction−to−Ambient – t v 10 s (Note 1)
R
q
JA
61.1
Junction−to−Foot (Drain)
R
q
JF
22.6
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
154.7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
6.5 mW @ 10 V
13.6 A
N−Channel
D
S
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
8.7 mW @ 4.5 V
NTMS4937NR2G SO−8
(Pb−Free)
2500/Tape & Reel
4937N
AYWWG
G
4937N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
(Note: Microdot may be in either location)
资源评论
末哥哥
- 粉丝: 0
- 资源: 1
最新资源
- 单片机常用芯片和器件手册.zip
- C51论坛离线浏览资料.chm
- 单片机指令速查表.doc
- 设定80C51串行异步通讯的波特率.zip
- 创新MOM培训文档_物料主数据之包材_240625.pptx
- 医学图像分类数据集：CT胸部扫描癌症分类（4分类）【包括划分好的数据、类别字典文件、python数据可视化脚本 】
- 基于C51单片机设计四位数字频率计数码管显示实验Proteus仿真及软件实例源码.zip
- 基于C51单片机设计MAX7221数码管动态显示程序Proteus仿真及软件实例源码.zip
- DS18B20温度传感器实战应用与源码解析.zip
- python-leetcode面试题解之第384题打乱数组.zip
资源上传下载、课程学习等过程中有任何疑问或建议，欢迎提出宝贵意见哦~我们会及时处理！
点击此处反馈
