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英飞凌官方2022 电力系统的脉冲与传输线理论 Pulses and transmission line theory
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2022年2月的英飞凌官方有关电力系统的脉冲与传输线理论。 英飞凌致力于增强具有综合半导体能力的电气系统。这种专业知识体现在产品本身及其在相关使用条件下的行为方面,也体现在分享有关最新半导体技术的知识方面。对于碳化硅MOSFET等新技术,这是特别重要的,因为碳化硅MOSFET在特定的操作条件下与硅开关相比具有不同的特性。 对于使用碳化硅MOSFET的应用程序,需要考虑的一个重要方面是从微控制器到EiceDRIVER门驱动器集成电路的连接。这两种设备,微控制器和栅极驱动器本身通常都是基于互补金属氧化物半导体CMOS技术。一个例外是光学隔离的栅极驱动器。由于较高的开关频率和较短的脉冲升降时间,微控制器和栅极驱动级之间的距离应该非常小。然而,从整个系统设计的角度来看,如果需要长电缆(>20…30厘米)来连接微控制器和门驱动器,那么信号和系统理论的基本定理就开始发挥作用,需要考虑
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Application Note Please read the Important Notice and Warnings at the end of this document Revision 1.0
www.infineon.com page 1 of 45 2022-03-07
AN-2022-02
Pulses and transmission line theory
Driving gate driver under highspeed conditions and with long
transmission lines
About this document
Infineon strives to enhance electrical systems with comprehensive semiconductor competence. This expertise
is revealed in the products themselves and their behavior under relevant use conditions, and also in the sharing
of knowledge on the latest semiconductor technologies. For new technologies such as the silicon carbide (SiC)
MOSFET, this is of particular importance, since a SiC MOSFET under certain operating conditions shows
different characteristics compared to silicon (Si) switches.
One important aspect to be considered for applications which use SiC MOSFET is the connection from
microcontroller to the EiceDRIVER™ gate driver ICs. Both devices, the microcontroller and the gate driver itself
are typically based on Complementary Metal-Oxide Semiconductor (CMOS)- technology. An exception are the
optically isolated gate drivers. Due higher switching frequencies and shorter rise- and fall- times from the
pulses as well, the distance between microcontroller and the gate driver stage should be very small. However,
from an overall system design perspective, if long cables (>20…30 cm) are necessary to connect the
microcontroller with the gate driver, fundamental theorems of the signal and system theory come into play and
need to be considered
Scope and purpose
• Switching frequency vs. fall- and rise time
• Review of application level impact using long cables
• Provide design guidelines on how to match longer cables used between microcontroller outputs and
gate-driver inputs in the context of high switching frequencies and fast rise- and fall- times
• Amplify the main differences of optoelectronic- based gate drivers versus gate drivers with inputs based
on CMOS technology
Intended audience
• Engineers who want to learn how to use the Infineon EiceDRIVER™ gate driver ICs
• Experienced design engineers designing circuits with Infineon EiceDRIVER™ gate driver ICs, IGBTs,
CoolSiC™ MOSFETs and MOSFETs
• Design engineers designing power electronic devices, like inverters, drives
Application Note 2 of 45 Revision 1.0
2022-03-07
Pulses and transmission line theory
Driving gate driver under highspeed conditions and with long transmission lines
Systems with CoolSiC™ MOSFETs
Table of contents
About this document ....................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1 Systems with CoolSiC™ MOSFETs ............................................................................................. 3
2 Switching frequencies, rise and fall times ................................................................................. 5
2.1 Pulse versus sinus ................................................................................................................................... 5
2.2 Observations on the 100 kHz trapezoidal signal .................................................................................... 8
2.3 Observations on the 100 MHz trapezoidal signal ................................................................................. 11
2.4 Observations with variable rising and falling switching edge ............................................................. 12
2.5 Summary of Fourier considerations ..................................................................................................... 16
3 Transmission line theory ........................................................................................................ 17
3.1 Introduction ........................................................................................................................................... 17
3.2 Line equations ....................................................................................................................................... 18
3.3 Wave propagations on transmission line ............................................................................................. 19
3.4 Special case, low loss lines ................................................................................................................... 21
3.5 Transmission line .................................................................................................................................. 22
3.6 Material properties of lines ................................................................................................................... 23
3.7 Determination of the waveform for line reflections ............................................................................ 23
3.7.1 LATTICE diagram – Example 1 ......................................................................................................... 25
3.7.2 LATTICE diagram – Example 2 ......................................................................................................... 27
3.8 Critical length of lines............................................................................................................................ 29
3.8.1 Critical length of lines for sinusoidal signals ................................................................................... 29
3.8.2 Critical length of lines for trapezoidal (or rectangular) signals ...................................................... 29
4 Circuit basics for impedance matching .................................................................................... 31
4.1 Small signal behavior of transistors ..................................................................................................... 31
4.1.1 Small-signal behavior of bipolar transistors ................................................................................... 31
4.1.2 Small-signal behavior of MOSFET transistors ................................................................................. 32
4.1.3 Push-pull output stage .................................................................................................................... 33
5 Line matching (termination) ................................................................................................... 35
5.1 Driving CMOS circuits via transmission line ......................................................................................... 35
5.1.1 Line termination via series damping ............................................................................................... 35
5.1.2 Line termination via pull-down ....................................................................................................... 36
5.1.3 Line termination via pull-up and pull-down ................................................................................... 37
5.1.4 AC-based line termination ............................................................................................................... 37
5.1.5 Chip interior ...................................................................................................................................... 38
5.2 Transmission line termination for gate drivers .................................................................................... 39
5.2.1 Line termination of single-channel opto drivers via series damping ............................................. 39
5.2.2 Line termination of multi-channel opto drivers via series damping .............................................. 39
5.2.3 Line termination of single-channel CT gate drivers via series damping ........................................ 40
5.2.4 Line termination of multi-channel CT gate drivers via series damping ......................................... 41
6 Summary ............................................................................................................................. 42
7 References and appendices .................................................................................................... 43
7.1 References ............................................................................................................................................. 43
Revision history............................................................................................................................. 44
Application Note 3 of 45 Revision 1.0
2022-03-07
Pulses and transmission line theory
Driving gate driver under highspeed conditions and with long transmission lines
Systems with CoolSiC™ MOSFETs
1 Systems with CoolSiC™ MOSFETs
In numerous applications such as solar inverters, telecom & network power and HEV/EV isolated gate drivers
are used for driving MOSFETs and IGBTs. In addition to switching the MOSFETs or IGBTs on and off, these
drivers also provide galvanic isolation. The device’s switching rate depends on the application and type of
switch being used. Switching frequencies of 10 to 20 kHz are common in IGBTs, however, silicon carbide (SiC)
and gallium-nitride or GaN-based systems can operate at much higher switching frequencies without
significant power loss during transition. Silicon carbide (SiC) as a compound semiconductor material is formed
by silicon (Si) and carbon (C).
A short summary shows several fundamental advantages of SiC- MOSFETs over Si- IGBTs or Si- MOSFETs:
- Higher voltage operation (at the same layer thickness)
- At the same voltage and current rating, SiC- MOSFETs have a much smaller die area and smaller die
thickness, leading to much lower conduction losses
- Higher switching frequeny (lower switching losses due to faster rise and fall times)
- Higher operating temperature
If all physical effects are considered in the gate driver design, the total costs of the whole system can be
reduced.
The topic of “higher switching frequency” should now be considered in more detail. One question often comes
up regarding how to drive a SiC MOSFET in the right way. Infineon Technologies AG is well known for its broad
range of integrated gate drivers. Dedicated parts of this portfolio are designed to drive SiC MOSFETs, especially
the EiceDRIVER™ family. Using the EiceDRIVER™ gate driver family for developing a SiC MOSFET based system
solution helps to reduce the design complexity, and development time, and reduces the bill of material in
comparison to a discrete implemented gate drive solution. Furthermore, the board space will be reduced and
the reliability of the gate-drive solution will be increased.
The most important aspect of this driver stage (shown in Figure 1) is to switch the load according to its
requirements, and to keep the switching losses as small as possible. The EiceDRIVER™ gate driver IC takes the
input-signal “IN+” and amplifies this signal to a level at which the switch (CoolSiC™) is fully conducting.
A second aspect becomes more and more important as soon as the application gets more complex, and the
switching frequencies are becoming higher. This is valid for the interface between controller and the gate-
driver and for the interface between driver and power-switch as well. Let’s consider the switching speed of the
CoolSiC™ power switch IMW120R045M1. The typical rise- time is given with 24 ns, the typical fall- time with 12
ns. These relatively sharp switching edges are the guarantee for the low switching losses of the power switch.
On the other hand, these fast-switching edges lead to increased technical requirements for all the components.
All components along the signal paths, the microcontroller, the interfaces (electrical bus) from microcontroller
to gate driver, the gate driver itself and at least the interface between gate-driver and power-switch should be
able to handle these sharp switching edges (see Figure 1).
Application Note 4 of 45 Revision 1.0
2022-03-07
Pulses and transmission line theory
Driving gate driver under highspeed conditions and with long transmission lines
Systems with CoolSiC™ MOSFETs
Figure 1 System overview including microcontroller – gate-driver – power switches
This document deals with the interface between the microcontroller and the gate driver. Ideally, the pulse-
based control signals precisely arrive at the same time at the gate-driver inputs, which requires the
microcontroller outputs to switch simultaneously in a system with well-balanced routing parasitics. However,
due to different delay times in the microcontroller outputs and different cable parasitics, the signals have
varying run times and typically do not exactly match in timing at the gate driver inputs, for example phase 2,
blue lines. If the microcontroller is fast enough, it can compensate the propagation delays in most cases. A so-
called dead time is introduced into the switching process. This is an artificially inserted delay which ensures
that the switches are never conducting at the same time. This, of course, delays the entire switching process.
Furthermore, the low-pass characteristic of the interface should be small enough to not weaken the necessary
slope.
Another important aspect is the cable length l1 (or length of transmission lines) between the microntroller and
the gate driver. First, the length of this line determines the propagation time of the signals from the
microcontroller to the gate driver. These propagation times must also be considered for very high frequencies.
In the further course of this document, it will be shown that with long cables reflections occur on these
transmission lines due to the steep rise and fall times of the high-frequency switching edges. These reflections
can significantly disrupt switching operations and lead to application failure.
Application Note 5 of 45 Revision 1.0
2022-03-07
Pulses and transmission line theory
Driving gate driver under highspeed conditions and with long transmission lines
Switching frequencies, rise and fall times
2 Switching frequencies, rise and fall times
2.1 Pulse versus sinus
A brief excursion into systems theory should once again recall the relationships between switching impulses
and sinusoidal frequencies.
In the previous section, the topic of impulses was mentioned. An pulse is a process with any time course, which
belong to the periodic processes, and are characterized by the fact that the same function value reappears after
a certain time T, the period duration. The periodic-function can change the sign within a period.
One of the basic periodic- functions is the sine- function as shown in Figure 2.
t [s]
2π
0
π
3
2π
π
1
2
T
π
5
2
3π
= Period
1
Amplitude
-1
π
1
4
a
(t) = A sin(
ω
t
+
a
(t) = A sin(
ω
t
+ 0
)
a
(t) = A sin(
ω
t
-
)
π
2
= A cos(
ω
t
)
φ
)
π
4
π
4
=
φ
π
2
=
-
Figure 2 Periodic sine and cosine function
The sine- function is an elementary function known from power electronics. This function is characterized by
three important parameters:
- Amplitude
- Frequency
- Phase angle at t = 0
The sinusoidal voltage can be generated, and explained, by rotating a conductor loop at a constant angular
velocity “ω” in a homogeneous magnetic field. A full revolution corresponds to an angle of 360 ° or 2 ∙ π.
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