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I2C INTERFACE

AND

CONTROL

REGISTERS

VREF

VDD

AGND

VOUT

SCL

TEMP

SENSOR

VREF

DIVIDER

SDA

Load

VARIABLE

BIAS

MENB

DGND

TIA

3-Lead

Electrochemical

Cell

CONTROLLER

LMP91000

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

LMP91000

ZHCSAR9I –JANUARY 2011–REVISED DECEMBER 2014

LMP91000 传传感感器器 AFE 系系统统：：用用于于低低功功耗耗化化学学感感测测应应用用的的可可配配置置 AFE 稳稳

压压器器

1 特特性性 3 说说明明

• 典型值，T

=25°C

LMP91000 是一款可编程模拟前端 (AFE)，适用于微

功耗电化学感测应用。它可提供传感器与微控制器之

• 电源电压：2.7V 至 5.25V

间的完整信号路径解决方案，此方案能够生成与电池电

• 电源电流（使用时间内的平均值）< 10µA

流成比例的输出电压。 LMP91000 的可编程性使它能

• 电池调节电流高达 10mA

够通过一个与多个离散解决方案相对的单一设计支持多

• 参比电极偏置电流 (85°C) 900pA（最大值）

种电化学传感器，例如，3 导线有毒气体传感器和 2

• 输出驱动电流 750µA

导线原电池型传感器。 LMP91000 支持 0.5nA/ppm 至

• 与大多数化学电池对接的完整稳压器电路

9500nA/ppm 范围内的气体灵敏度。它还可实现 5µA

• 可编程电池偏置电压

至 750µA 满量程电流范围的简单转换。

• 低偏置电压漂移

• 可编程互阻放大器 (TIA) 增益 2.75kΩ 至 350k Ω

LMP91000 的可调节电池偏置和互阻抗放大器 (TIA) 增

• 灌电流和拉电流能力

益可通过 I

C 接口编程。 I

C 接口也可用于传感器诊

• I

C 兼容数字接口

断。集成温度传感器可由用户通过 VOUT 引脚读取，

• 环境工作温度范围 -40°C 至 85°C

并且可被用于提供额外信号校正（单位：µC），或者

• 14 引脚晶圆级小外形无引线 (WSON) 封装

被监控以验证传感器的温度情况。

• 由 WEBENCH

传感器 AFE 设计工具提供支持

LMP91000 经过优化，适用于微功耗应用，工作电压

范围为 2.7V 至 5.25V。总流耗低于 10μA。可通过关

2 应应用用

闭 TIA 放大器以及使用一个内部开关将参比电极与工

• 化学成分识别

作电极短接来进一步节能。

• 电流计应用

• 电化学血糖仪

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

LMP91000 WSON (14) 4.00mm x 4.00mm

(1) 如需了解所有可用封装，请见数据表末尾的可订购产品附录。

简简化化应应用用电电路路原原理理图图

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

English Data Sheet: SNAS506

LMP91000

ZHCSAR9I –JANUARY 2011–REVISED DECEMBER 2014

www.ti.com.cn

目目录录

7.3 Feature Description................................................. 13

1 特特性性.......................................................................... 1

7.4 Device Functional Modes........................................ 19

2 应应用用.......................................................................... 1

7.5 Programming .......................................................... 20

3 说说明明.......................................................................... 1

7.6 Registers Maps ...................................................... 21

4 修修订订历历史史记记录录 ........................................................... 2

8 Application and Implementation ........................ 24

5 Pin Configuration and Functions......................... 3

8.1 Application Information............................................ 24

6 Specifications......................................................... 4

8.2 Typical Application ................................................. 26

6.1 Absolute Maximum Ratings ...................................... 4

9 Power Supply Recommendations...................... 28

6.2 ESD Ratings.............................................................. 4

9.1 Power Consumption................................................ 28

6.3 Recommended Operating Conditions....................... 4

10 Layout................................................................... 29

6.4 Thermal Information.................................................. 4

10.1 Layout Guidelines ................................................. 29

6.5 Electrical Characteristics .......................................... 5

10.2 Layout Example .................................................... 29

6.6 I

C Interface.............................................................. 7

11 器器件件和和文文档档支支持持 ..................................................... 30

6.7 Timing Requirements ............................................... 8

11.1 商标 ....................................................................... 30

6.8 Typical Characteristics.............................................. 9

11.2 静电放电警告......................................................... 30

7 Detailed Description............................................ 13

11.3 术语表 ................................................................... 30

7.1 Overview ................................................................. 13

12 机机械械封封装装和和可可订订购购信信息息 .......................................... 30

7.2 Functional Block Diagram ....................................... 13

4 修修订订历历史史记记录录

Changes from Revision H (March 2013) to Revision I Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section ................................................................................................. 3

Changes from Revision G (March 2013) to Revision H Page

• Changed layout of National Data Sheet to TI format ........................................................................................................... 27

LMP91000

ZHCSAR9I –JANUARY 2011–REVISED DECEMBER 2014

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)

(1)

MIN MAX UNIT

Voltage between any two pins 6.0 V

Current through VDD or VSS 50 mA

Current sunk and sourced by CE pin 10 mA

Current out of other pins

(2)

5 mA

Junction Temperature

(3)

150 °C

Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All non-power pins of this device are protected against ESD by snapback devices. Voltage at such pins will rise beyond absmax if

current is forced into pin.

(3) The maximum power dissipation is a function of T

J(MAX)

, R

θJA

, and the ambient temperature, T

. The maximum allowable power

dissipation at any ambient temperature is P

DMAX

= (T

J(MAX)

- T

)/ θ

All numbers apply for packages soldered directly onto a PCB.

6.2 ESD Ratings

VALUE UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

±2000

(ESD)

Electrostatic discharge V

Charged-device model (CDM), per JEDEC specification JESD22- ±1000

C101

(2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIX MAX UNIT

Supply Voltage V

= (VDD - AGND) 2.7 5.25 V

Temperature Range

(1)

–40 85 °C

(1) The maximum power dissipation is a function of T

J(MAX)

, R

θJA

, and the ambient temperature, T

. The maximum allowable power

dissipation at any ambient temperature is P

DMAX

= (T

J(MAX)

- T

)/ θ

All numbers apply for packages soldered directly onto a PCB.

6.4 Thermal Information

LMP91000

THERMAL METRIC

(1)

WSON UNIT

14 PINS

θJA

Package Thermal Resistance 44 °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

LMP91000

www.ti.com.cn

ZHCSAR9I –JANUARY 2011–REVISED DECEMBER 2014

6.5 Electrical Characteristics

Unless otherwise specified, T

= 25°C, V

=(VDD – AGND), V

= 3.3 V and AGND = DGND = 0 V, VREF = 2.5 V, Internal

Zero = 20% VREF.

(1)

PARAMETER TEST CONDITIONS MIN

(2)

TYP

(3)

MAX

(2)

UNIT

POWER SUPPLY SPECIFICATION

3-lead amperometric cell mode

MODECN = 0x03 10 13.5

–40 to 80°C (please verify that the degree is

correct)

Standby mode

MODECN = 0x02 6.5 8

–40 to 80°C 10

Temperature Measurement mode with TIA OFF

MODECN = 0x06 11.4 13.5

–40 to 80°C 15

Supply Current µA

Temperature Measurement mode with TIA ON

MODECN = 0x07 14.9 18

–40 to 80°C 20

2-lead ground-referred galvanic cell mode

VREF=1.5 V 6.2

MODECN = 0x01 8

–40 to 80°C 9

Deep Sleep mode

MODECN = 0x00 0.6 0.85

–40 to 80°C 1

POTENTIOSTAT

Bias Programming range Percentage of voltage referred to VREF or VDD

(differential voltage between RE ±24%

pin and WE pin)

Bias_RW

First two smallest step ±1

Bias Programming Resolution

All other steps ±2%

VDD = 2.7 V

Internal Zero 50% VDD –90 90

–40 to 80°C –800 800

Input bias current at RE pin pA

VDD = 5.25 V

Internal Zero 50% VDD –90 90

–40 to 80°C –900 900

Minimum operating current sink 750

µA

capability

source 750

Minimum charging capability

(4)

sink 10

source 10

AOL_A1 Open-loop voltage gain of control 300 mV ≤ VCE ≤ Vs-300 mV;

loop op amp (A1)

–750 µA ≤ICE ≤ 750 µA dB

–40 to 80°C 104 120

(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that T

= T

(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using

statistical quality control (SQC) method.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped

production material.

(4) At such currents no accuracy of the output voltage can be expected.

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