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30V/40A N-Channel Advanced Power MOSFET
Copyright Vergiga Semiconductor Co., Ltd
Rev B – MAR, 2022
www.vgsemi.com
VS3620GEMC
V
DS
30 V
R
DS(on),TYP
@ V
GS
=10 V 4.9 mΩ
R
DS(on),TYP
@ V
GS
=4.5 V 8 mΩ
I
D(Silicon Limited)
60 A
I
D(Package Limited)
40 A
Maximum ratings, at
T
A
=25°C, unless otherwise specified
Symbol Parameter Rating Unit
V
(BR)DSS
Drain-Source breakdown voltage 30 V
V
GS
Gate-Source voltage ±20 V
I
S
Diode continuous forward current
T
C
= 25°C
60 A
I
D
Continuous drain current @VGS=10V (Silicon limited)
T
C
= 25°C
60 A
I
D
Continuous drain current @VGS=10V (Silicon limited)
T
C
= 100°C
38 A
I
D
Continuous drain current @VGS=10V (Package limited)
T
C
= 25°C
40 A
I
DM
Pulse drain current tested
①
T
C
= 25°C
240 A
I
DSM
Continuous drain current @VGS=10V
T
A
= 25°C
21 A
T
A
= 70°C
17 A
EAS
Avalanche energy, single pulsed
②
20 mJ
P
D
Maximum power dissipation
T
C
= 25°C
30 W
T
C
= 100°C
12 W
P
DSM
Maximum power dissipation
③
T
A
= 25°C
3.6 W
T
A
= 70°C
2.3 W
T
STG
,
T
J
Storage and Junction Temperature Range -55 to 150 °C
Thermal Characteristics
Symbol Parameter Typical Max Unit
R
θJC
Thermal Resistance, Junction-to-Case 4.2 5 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 35 42 °C/W
Features
Enhancement mode
Very low on-resistance
VitoMOS
®
Ⅱ
Technology
Fast Switching and High efficiency
Part ID Package Type Marking Packing
VS3620GEMC PDFN3333 3620GE 5000PCS/Reel
PDFN3333