OPA861
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SBOS338G –AUGUST 2005–REVISED MAY 2013
ELECTRICAL CHARACTERISTICS: V
S
= +5V
R
L
= 500Ω to V
S
/2 and R
ADJ
= 250Ω, unless otherwise noted.
OPA861ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
0°C to –40°C to MIN/ TEST
PARAMETER CONDITIONS +25°C +25°C
(2)
70°C
(3)
+85°C
(3)
UNITS MAX LEVEL
(1)
OTA—Open-Loop (see Figure 33)
AC PERFORMANCE
G = +5, V
O
= 200mV
PP
,
Bandwidth 73 72 72 70 MHz min B
R
L
= 500Ω
G = +5, V
O
= 1V
PP
73 MHz typ C
Slew Rate G = +5, V
O
= 2.5V Step 410 395 390 390 V/µs min B
Rise Time and Fall Time V
O
= 1V Step 4.4 ns typ C
Harmonic Distortion G = +5, V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 500Ω –67 –55 –54 –54 dB max B
3rd-Harmonic R
L
= 500Ω –57 –50 –49 –48 dB max B
Base Input Voltage Noise f > 100kHz 2.4 3.0 3.3 3.4 nV/√Hz max B
Base Input Current Noise f > 100kHz 1.7 2.4 2.45 2.5 pA/√Hz max B
Emitter Input Current Noise f > 100kHz 5.2 15.3 16.6 17.5 pA/√Hz max B
OTA DC PERFORMANCE
(4)
(see Figure 33)
Minimum OTA Transconductance (g
m
) V
O
= ±10mV, R
C
= 50Ω, R
E
= 0Ω 85 70 67 65 mA/V min A
Maximum OTA Transconductance (g
m
) V
O
= ±10mV, R
C
= 50Ω, R
E
= 0Ω 85 140 145 150 mA/V max A
B-Input Offset Voltage V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±3 ±12 ±15 ±20 mV max A
Average B-Input Offset Voltage Drift V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±67 ±120 μV/°C max B
B-Input Bias Current V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±1 ±5 ±6 ±6.6 μA max A
Average B-Input Bias Current Drift V
B
= 0V, R
C
= 0Ω, R
E
= 100Ω ±20 ±25 nA/°C max B
E-Input Bias Current V
B
= 0V, V
C
= 0V ±30 ±100 ±125 ±140 μA max A
Average E-Input Bias Current Drift V
B
= 0V, V
C
= 0V ±500 ±600 nA/°C max B
C-Output Bias Current V
B
= 0V, V
C
= 0V ±15 μA typ C
OTA INPUT (see Figure 33)
Most Positive B-Input Voltage 4.2 3.7 3.6 3.6 V min B
Least Positive B-Input Voltage 0.8 1.3 1.4 1.4 V max B
B-Input Impedance 455 || 2.1 kΩ || pF typ C
Min E-Input Resistance 11.8 14.4 14.9 15.4 Ω max B
Max E-Input Resistance 11.8 7.1 6.9 6.7 Ω min B
OTA OUTPUT
Maximum E-Output Voltage Compliance I
E
= ±1mA 4.2 3.7 3.6 3.6 V min A
Minimum E-Output Voltage Compliance I
E
= ±1mA 0.8 1.3 1.4 1.4 V max A
E-Output Current, Sinking/Sourcing V
E
= 0 ±8 ±7 ±6.5 ±6.5 mA min A
Maximum C-Output Voltage Compliance I
C
= ±1mA 4.7 4.0 3.9 3.9 V min A
Minimum C-Output Voltage Compliance I
C
= ±1mA 0.3 1.0 1.1 1.1 V max A
C-Output Current, Sinking/Sourcing V
C
= 0 ±8 ±7 ±6.5 ±6.5 mA min A
C-Output Impedance 54 || 2 kΩ || pF typ C
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 3°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
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