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Rev 2.0, 3/3/2010 1 © 2011 Micron Technology, Inc. All Rights Reserved
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTION DATA SHEET SPECIFICATIONS.
IBIS/HSPICE Model Quality Report
Design ID: U68A
Description: 1Gb x4, x8, x16 DDR2 SDRAM
Marketing device name(s): MT47H256M4CF, MT47H128M8CF, MT47H64M16HR,
MT47H256M4U68A, MT47H128M8U68A, MT47H64M16U68A
Valid Speed Grades: DDR2-400, DDR2-533, DDR2-667, DDR2-800, DDR2-1066
Zip File Name: u68a_ibis.zip
IBIS File name: u68a.ibs, u68a_it.ibs, u68a_at.ibs File rev: 2.4
HSPICE File name: u68a_hspice.zip File rev: 2.3
EBD file name (if applicable): File rev:
Die Rev: H
Date: January 25, 2011
Datasheet Link: http://www.micron.com/get-document/?documentId=456&file=1GbDDR2.pdf
E-mail modelsupport@micron.com for questions regarding Quality Report.
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Device Parameters
VDDQ – Slow: 1.7V Typical: 1.8V Fast: 1.9V
VDD – Slow: 1.7V Typical: 1.8V Fast: 1.9V
Junction Temperature (Commercial) - Slow: 100C Typical: 50C Fast: 0C
Junction Temperature (Industrial) - Slow: 110C Typical: 50C Fast: -40C
Junction Temperature (Automotive) - Slow: 120C Typical: 50C Fast: -40C
VDDQ/VSSQ Decoupling Capacitance: 572pF
Included in HSPICE DQ/DQS models? Yes Amount per DQ/DQS model: 28.6pF/57.2pF
VDDQ/VSSQ Decoupling Capacitance Series Resistance: 0.01ohm
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IBIS Quality Summary
1. Include the IBIS Quality Specification 2.0 Overall IBIS Quality level. For details on IBIS
Quality, reference the quality specification and quality checklist on IBIS quality webpage
http://www.eda.org/pub/ibis/quality_wip/.
Overall IBIS Quality Level: IQ3MSX
Exceptions: Overshoot parameters not available from datasheet, Tslew_ac/Tdiffslew_ac
not available from datasheet set high
