P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• T
renchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/9
5/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 30
0.042 at V
GS
= - 10 V
- 5.8
0.055 at V
GS
= - 6 V
- 5.0
0.
060 at V
GS
= - 4.5 V
- 4.4
SD
SD
S
D
G
D
SO-8
5
6
7
8
T
op Vi
e
w
2
3
4
1
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless othe
rwise noted
Parameter Symbol 10 s Steady State
Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 20
Contin
uous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 5.8 - 4.1
A
T
A
= 70 °C
- 4.6 - 3.2
Pulsed Drain Current
I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 2.3 - 1.1
Maximum Powe
r Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 70 °C
1.6 0.8
Operating Junction and Storage T
emperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical M
aximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
40 50
°C/W
Steady State 70 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
24 30
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