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K9F1G08U0E 存储器-634c1c60172ded630a1cb612.pdf 本文档讨论了 K9F1G08U0E 存储器的技术规格和特性。该存储器是一种 1Gb E-die NAND Flash 存储器，使用 Single-Level-Cell（1bit/cell）技术。下面是对该存储器的详细介绍： 1. 存储器概述 K9F1G08U0E 存储器是一种高性能的 NAND Flash 存储器，使用 1Gb E-die 体系结构。该存储器具有高存储密度、低功耗和高速读写能力等特点。 2. 存储器架构 K9F1G08U0E 存储器采用 Single-Level-Cell（1bit/cell）技术，具有 1Gb 的存储容量。该存储器的架构由多个存储单元、控制单元和 Cache 单元组成。 3. 存储器特性 K9F1G08U0E 存储器具有以下特性： * 高存储密度：1Gb * 低功耗：支持低功耗操作 * 高速读写能力：支持高速读写操作 * 高可靠性：具有高可靠性和长期使用寿命 4. 存储器应用 K9F1G08U0E 存储器广泛应用于各种电子设备中，如智能手机、平板电脑、笔记本电脑等。该存储器也可以应用于汽车电子、工业控制、医療设备等领域。 5. 存储器接口 K9F1G08U0E 存储器支持多种接口协议，如 SPI、SD/MMC 等。该存储器也支持高速数据传输，能够满足高速数据存储和读取的需求。 6. 存储器安全性 K9F1G08U0E 存储器具有高安全性，支持多种安全机制，如数据加密、访问控制等。该存储器也具有高可靠性和长期使用寿命。 7. 存储器revision history K9F1G08U0E 存储器的 Revision History 如下： * 0.01. Initial issue Dec. 17, 2012 * 0.011. Typo corrected. Feb.02, 2013 * 0.1. Chapter 4.3 Input Data Latch Cycle Chapter 4.11 Copy-Back Program Operation with Random Data Input revised. Feb.22, 2013 * 1.01. read ID revised Jul.03, 2013 * 1.11. Corrected errata Aug.06, 2013 * 1.111. Industrial product feature added Aug.07, 2013 K9F1G08U0E 存储器是一种高性能的 NAND Flash 存储器，具有高存储密度、低功耗和高速读写能力等特点。该存储器广泛应用于各种电子设备中，并具有高安全性和可靠性。

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K9F1G08U0E

Rev. 1.11, Aug. 2013

SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the sole and exclusive property of Samsung

Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property

right is granted by one party to the other party under this document, by implication, estoppel or other-

wise.

Samsung products are not intended for use in life support, critical care, medical, safety equipment, or

similar applications where product failure could result in loss of life or personal or physical harm, or any

military or defense application, or any governmental procurement to which special terms or provisions

may apply.

For updates or additional information about Samsung products, contact your nearest Samsung office.

All brand names, trademarks and registered trademarks belong to their respective owners.

SAMSUNG CONFIDENTIAL

1Gb E-die NAND Flash

Single-Level-Cell (1bit/cell)

datasheet

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Table Of Contents

datasheet

K9F1G08U0E

FLASH MEMORY

Rev. 1.11

SAMSUNG CONFIDENTIAL

1.0 INTRODUCTION ........................................................................................................................................................4

1.1 General Description................................................................................................................................................. 4

1.2 Features ................................................................................................................................................................. 4

1.3 General Description................................................................................................................................................. 4

1.4Pin Configuration (TSOP1)....................................................................................................................................... 5

1.4.1 Package Dimensions ........................................................................................................................................ 5

1.5 Pin Configuration (FBGA)........................................................................................................................................ 6

1.5.1 Package Dimensions ........................................................................................................................................ 7

1.6 Pin Description ........................................................................................................................................................ 8

2.0 PRODUCT INTRODUCTION......................................................................................................................................10

2.1 Absolute Maximum Ratings..................................................................................................................................... 11

2.2 Recommended Operating Conditions ..................................................................................................................... 11

2.3 DC And Operating Characteristics(Recommended operating conditions otherwise noted.) ................................... 11

2.4 Valid Block.............................................................................................................................................................. 12

2.5 AC Test Condition ................................................................................................................................................... 12

2.6 Capacitance(TA=25°C, VCC=3.3V, f=1.0MHz)....................................................................................................... 12

2.7 Mode Selection........................................................................................................................................................ 12

2.8 Program / Erase Characteristics.............................................................................................................................. 13

2.9 AC Timing Characteristics for Command / Address / Data Input ............................................................................ 13

2.10 AC Characteristics for Operation........................................................................................................................... 14

3.0 NAND FLASH TECHNICAL NOTES ..........................................................................................................................15

3.1 Initial Invalid Block(s)...............................................................................................................................................15

3.2 Identifying Initial Invalid Block(s) ............................................................................................................................. 15

3.3 Error in Write or Read Operation............................................................................................................................. 16

3.4 Addressing for Program Operation.......................................................................................................................... 18

4.0 SYSTEM INTERFACE USING CE DON’T-CARE. .....................................................................................................19

4.1 Command Latch Cycle ............................................................................................................................................ 20

4.2 Address Latch Cycle................................................................................................................................................ 20

4.3 Input Data Latch Cycle ............................................................................................................................................ 21

4.4 Status Read Cycle................................................................................................................................................... 22

4.5 Read Operation ....................................................................................................................................................... 23

4.6 Read Operation(Intercepted by CE)........................................................................................................................ 23

4.7 Random Data Output In a Page ............................................................................................................................. 24

4.8 Page Program Operation......................................................................................................................................... 25

4.9 Page Program Operation with Random Data Input ................................................................................................. 26

4.10 Copy-Back Program Operation ............................................................................................................................. 27

4.11 Copy-Back Program Operation with Random Data Input...................................................................................... 28

4.12 Block Erase Operation........................................................................................................................................... 29

4.13 Read ID Operation................................................................................................................................................. 29

5.0 DEVICE OPERATION ................................................................................................................................................32

5.1 Page Read............................................................................................................................................................... 32

5.2 Page Program ......................................................................................................................................................... 33

5.3 Copy-Back Program ................................................................................................................................................ 34

5.4 Block Erase ............................................................................................................................................................. 35

5.5 Read Status............................................................................................................................................................. 35

5.6 Read ID ................................................................................................................................................................... 36

5.7 Reset ....................................................................................................................................................................... 36

5.8 Ready/busy.............................................................................................................................................................. 37

6.0 DEVICE OPERATION ................................................................................................................................................38

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datasheet

K9F1G08U0E

FLASH MEMORY

Rev. 1.11

SAMSUNG CONFIDENTIAL

1.0 INTRODUCTION

1.1 General Description

1.2 Features

1.3 General Description

Offered in 128Mx8bit, the K9F1G08U0E is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for

the solid state application market. A program operation can be performed in typical 400s on the (2K+64)Byte page and an erase operation can be per-

formed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports

for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse rep-

etition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0Es

extended reliability by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0E is an optimum solution for large

nonvolatile storage applications such as solid state file storage and other portable app.lications requiring non-volatility.

Part Number Vcc Range Organization PKG Type

K9F1G08U0E-S 2.7V ~ 3.6V x8 TSOP1

K9F1G08U0E-B

2.7V ~ 3.6V x8

63FBGA

 Voltage Supply

- 3.3V Device(K9F1G08U0E) : 2.7V ~ 3.6V

 Organization

- Memory Cell Array : (128M + 4M) x 8bit