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0 2 4 6 8 10 12 14 16 18 20

- Gate-to- Source Voltage (V)

DS(on)

- On-State Resistance (mΩ)

= 25°C Id = 100A

= 125ºC Id = 100A

G001

0 5 10 15 20 25 30 35 40 45 50 55

- Gate Charge (nC)

- Gate-to-Source Voltage (V)

= 100A

= 20V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

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CSD18502KCS

SLPS367B –AUGUST 2012–REVISED JULY 2014

CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

• Ultra-Low Q

and Q

= 25°C TYPICAL VALUE UNIT

• Low Thermal Resistance

Drain-to-Source Voltage 40 V

• Avalanche Rated

Gate Charge Total (10V) 52 nC

Gate Charge Gate-to-Drain 8.4 nC

• Logic Level

= 4.5 V 3.3 mΩ

• Pb Free Terminal Plating

DS(on)

Drain-to-Source On Resistance

= 10 V 2.4 mΩ

• RoHS Compliant

GS(th)

Threshold Voltage 1.8 V

• Halogen Free

• TO-220 Plastic Package

Ordering Information

(1)

Device Package Media Qty Ship

2 Applications

TO-220 Plastic

CSD18502KCS Tube 50 Tube

Package

• DC-DC Conversion

(1) For all available packages, see the orderable addendum at

• Secondary Side Synchronous Rectifier

the end of the data sheet.

• Motor Control

Absolute Maximum Ratings

3 Description

= 25°C VALUE UNIT

This 2.4 mΩ, 40 V, TO-220 NexFET™ power

Drain-to-Source Voltage 40 V

MOSFET is designed to minimize losses in power

Gate-to-Source Voltage ±20 V

conversion applications.

Continuous Drain Current (Package limited) 100

Continuous Drain Current (Silicon limited),

212

= 25°C A

Continuous Drain Current (Silicon limited),

150

= 100°C

Pulsed Drain Current

(1)

400 A

Power Dissipation 259 W

, Operating Junction and

–55 to 175 °C

stg

Storage Temperature Range

Avalanche Energy, single pulse

330 mJ

= 81 A, L = 0.1 mH, R

= 25 Ω

(1) Max R

θJC

= 0.6ºC/W, pulse duration ≤100 μs, duty cycle

≤1%

DS(on)

vs V

Gate Charge

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD18502KCS

SLPS367B –AUGUST 2012–REVISED JULY 2014

www.ti.com

Table of Contents

5.3 Typical MOSFET Characteristics.............................. 4

1 Features.................................................................. 1

6 Device and Documentation Support.................... 7

2 Applications ........................................................... 1

6.1 Trademarks............................................................... 7

3 Description ............................................................. 1

6.2 Electrostatic Discharge Caution................................ 7

4 Revision History..................................................... 2

6.3 Glossary.................................................................... 7

5 Specifications......................................................... 3

7 Mechanical, Packaging, and Orderable

5.1 Electrical Characteristics........................................... 3

Information ............................................................. 8

5.2 Thermal Information.................................................. 3

7.1 KCS Package Dimensions........................................ 8

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (October 2012) to Revision B Page

• Increased the T

= 25º continuous drain current to 212 A .................................................................................................... 1

• Increased the T

= 125º continuous drain current to 150 A .................................................................................................. 1

• Increased the pulsed drain current to 400 A ......................................................................................................................... 1

• Increased the max power dissipation to 259 W ..................................................................................................................... 1

• Increased the max operating junction and storage temperature to 175º ............................................................................... 1

• Updated the pulsed current conditions .................................................................................................................................. 1

• Updated Figure 1 from a normalized R

θJA

to an R

θJC

curve ................................................................................................... 4

• Updated Figure 6 to extend to 175°C .................................................................................................................................... 5

• Updated Figure 8 to extend to 175°C .................................................................................................................................... 5

• Updated the SOA in Figure 10 .............................................................................................................................................. 6

• Updated Figure 12 to extend to 175°C .................................................................................................................................. 6

Changes from Original (August 2012) to Revision A Page

• Changed the Transconductance TYP value From: 149 S To: 138 S..................................................................................... 3

• Changed R

θJA

From: 65°C/W To: 62°C/W.............................................................................................................................. 3