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ADS1210, ADS1211
3
SBAS034B
www.ti.com
POWER SUPPLY REQUIREMENTS
Power Supply Voltage 4.75 5.25 V
Power Supply Current:
Analog Current 2mA
Digital Current 3.5 mA
Additional Analog Current with
REF
OUT
Enabled 1.6 mA
V
BIAS
Enabled No Load 1 mA
Power Dissipation 26 40 mW
TMR of 16 37 60 mW
f
XIN
= 2.5MHz 17 mW
f
XIN
= 2.5MHz, TMR of 16 27 mW
Sleep Mode 11 mW
TEMPERATURE RANGE
Specified –40 +85 °C
Storage –60 +125 °C
NOTES: (1) In order to achieve the converter’s full-scale range, the input must be fully differential (A
IN
N = 2 • REF
IN
– A
IN
P). If the input is single-ended (A
IN
N or
A
IN
P is fixed), then the full-scale range is one-half that of the differential range. (2) This range is set with external resistors and V
BIAS
(as described in the text).
Other ranges are possible. (3) Input impedance is higher with lower f
XIN
. (4) Applies after calibration. (5) After system calibration, these errors will be of the order
of the effective resolution of the converter. Refer to the Typical Performance Curves which apply to the desired mode of operation. (6) Recalibration can remove
these errors. (7) The specification also applies at f
DATA
/i, where i is 2, 3, 4, etc. (8) Voltages at the analog inputs must remain within AGND to AV
DD
. (9) The common-
mode rejection test is performed with a 100mV differential input.
SPECIFICATIONS (CONT)
ADS1210U, P/ADS1211U, P, E
PARAMETER CONDITIONS MIN TYP MAX UNITS
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information,
see the Package Option Addendum located at the end of
this data sheet.
Analog Input: Current ................................................ ±100mA, Momentary
±10mA, Continuous
Voltage ................................... AGND –0.3V to AV
DD
+0.3V
AV
DD
to DV
DD
...........................................................................–0.3V to 6V
AV
DD
to AGND .........................................................................–0.3V to 6V
DV
DD
to DGND .........................................................................–0.3V to 6V
AGND to DGND ................................................................................ ±0.3V
REF
IN
Voltage to AGND ............................................ –0.3V to AV
DD
+0.3V
Digital Input Voltage to DGND .................................. –0.3V to DV
DD
+0.3V
Digital Output Voltage to DGND ............................... –0.3V to DV
DD
+0.3V
Lead Temperature (soldering, 10s) .............................................. +300°C
Power Dissipation (Any package) .................................................. 500mW
ABSOLUTE MAXIMUM RATINGS
All specifications T
MIN
to T
MAX
, AV
DD
= DV
DD
= +5V, f
XIN
= 10MHz, programmable gain amplifier setting of 1, Turbo Mode Rate of 1, REF
OUT
disabled,V
BIAS
disabled,
and external 2.5V reference, unless otherwise specified.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper han-
dling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.