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Agilent ATF-54143 Low Noise

Enhancement Mode

Pseudomorphic HEMT in a

Surface Mount Plastic Package

Data Sheet

Description

Agilent Technologies’s ATF-54143

is a high dynamic range, low

noise, E-PHEMT housed in a

4-lead SC-70 (SOT-343) surface

mount plastic package.

The combination of high gain,

high linearity and low noise

makes the ATF-54143 ideal for

cellular/PCS base stations,

MMDS, and other systems in the

450 MHz to 6 GHz frequency

range.

Features

• High linearity performance

• Enhancement Mode Technology

[1]

• Low noise figure

• Excellent uniformity in product

specifications

• 800 micron gate width

• Low cost surface mount small

plastic package SOT-343 (4 lead

SC-70)

• Tape-and-Reel packaging option

available

Specifications

2 GHz; 3 V, 60 mA (Typ.)

• 36.2 dBm output 3

order intercept

• 20.4 dBm output power at 1 dB

gain compression

• 0.5 dB noise figure

• 16.6 dB associated gain

Applications

• Low noise amplifier for cellular/

PCS base stations

• LNA for WLAN, WLL/RLL and

MMDS applications

• General purpose discrete E-PHEMT

for other ultra low noise applications

Note:

1. Enhancement mode technology requires

positive Vgs, thereby eliminating the need for

the negative gate voltage associated with

conventional depletion mode devices.

Surface Mount Package

SOT-343

Pin Connections and

Package Marking

SOURCE

DRAIN

GATE

SOURCE

4Fx

Note:

Top View. Package marking provides orientation

and identification

“4F” = Device Code

“x” = Date code character

identifies month of manufacture.

ATF-54143 Absolute Maximum Ratings

[1]

Absolute

Symbol Parameter Units Maximum

Drain - Source Voltage

[2]

Gate - Source Voltage

[2]

V -5 to 1

Gate Drain Voltage

[2]

Drain Current

[2]

mA 120

diss

Total Power Dissipation

[3]

mW 360

in max.

RF Input Power dBm 10

[5]

Gate Source Current mA 2

[5]

Channel Temperature °C 150

STG

Storage Temperature °C -65 to 150

Thermal Resistance

[4]

°C/W 162

Notes:

1. Operation of this device in excess of any one

of these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. Source lead temperature is 25°C. Derate

6 mW/°C for T

> 92°C.

4. Thermal resistance measured using

150°C Liquid Crystal Measurement method.

5. The device can handle +10 dBm RF Input

Power provided I

is limited to 2 mA. I

1dB

drive level is bias circuit dependent. See

application section for additional information.

Product Consistency Distribution Charts

[6, 7]

(V)

Figure 1. Typical I-V Curves.

= 0.1 V per step)

(mA)

0.4V

0.5V

0.6V

0.7V

0.3V

02146537

120

100

OIP3 (dBm)

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.

LSL = 33.0, Nominal = 36.575

30 3432 38 4036 42

160

120

Cpk = 0.77

Stdev = 1.41

-3 Std

GAIN (dB)

Figure 3. Gain @ 2 GHz, 3 V, 60 mA.

USL = 18.5, LSL = 15, Nominal = 16.6

14 1615 1817 19

200

160

120

Cpk = 1.35

Stdev = 0.4

-3 Std

+3 Std

NF (dB)

Figure 4. NF @ 2 GHz, 3 V, 60 mA.

USL = 0.9, Nominal = 0.49

0.25 0.650.45 0.85 1.05

160

120

Cpk = 1.67

Stdev = 0.073

+3 Std

Notes:

6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere

between the upper and lower limits.

7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on

production test equipment. Circut losses have been de-embeaded from actual measurements.

ATF-54143 Electrical Specifications

= 25°C, RF parameters measured in a test circuit for a typical device

Symbol Parameter and Test Condition Units Min. Typ.

[2]

Max.

Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75

Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52

Idss Saturated Drain Current Vds = 3V, Vgs = 0V µA — 15

Gm Transconductance Vds = 3V, gm = ∆Idss/∆Vgs; mmho 230 410 560

∆Vgs = 0.75 -0.7 = 0.05V

Igss Gate Leakage Current Vgd = Vgs = -3V µA ——200

NF Noise Figure

[1]

f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9

f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —

Ga Associated Gain

[1]

f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5

f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —

OIP3 Output 3

Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —

Intercept Point

[1]

f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —

P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —

Output Power

[1]

f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —

Notes:

1. Measurements obtained using production test board described in Figure 5.

2. Typical values measured from a sample size of 450 parts from 9 wafers.

Input

50 Ohm

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag = 0.30

Γ_ang = 150°

(0.3 dB loss)

Output

Matching Circuit

Γ_mag = 0.035

Γ_ang = -71°

(0.4 dB loss)

DUT

50 Ohm

Transmission

Line Including

Drain Bias T

(0.3 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-

sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from

actual measurements.

ATF-54143 Typical Performance Curves

Figure 8. Gain vs. I

and V

Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 10. OIP3 vs. I

and V

Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 12. P1dB vs. I

and V

Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 9. Gain vs. I

and V

Tuned for

Max OIP3 and Fmin at 900 MHz.

(mA)

GAIN (dB)

0 1004020 8060

(mA)

OIP3 (dBm)

0 1004020 8060

(mA)

[1]

P1dB (dBm)

0 1004020 8060

(mA)

GAIN (dB)

0 1004020 8060

Figure 11. OIP3 vs. I

and V

Tuned for

Max OIP3 and Fmin at 900 MHz.

(mA)

OIP3 (dBm)

0 1004020 8060

Figure 13. P1dB vs. I

and V

Tuned for

Max OIP3 and Fmin at 900 MHz.

Figure 14. Gain vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

(mA)

[1]

P1dB (dBm)

0 1004020 8060

25°C

-40°C

85°C

FREQUENCY (GHz)

GAIN (dB)

0621453

Figure 7. Fmin vs. I

and V

Tuned for

Max OIP3 and Min NF at 900 MHz.

(mA)

Fmin (dB)

0 1004020 8060

0.6

0.5

0.4

0.3

0.2

0.1

Figure 6. Fmin vs. I

and V

Tuned for

Max OIP3 and Fmin at 2 GHz.

(mA)

Fmin (dB)

0 1004020 8060

0.7

0.6

0.5

0.4

0.3

0.2

Notes:

1. I

represents the quiescent drain current

without RF drive applied. Under low values of

, the application of RF drive will cause I

increase substantially as P1dB is approached.

2. Fmin values at 2 GHz and higher are based on

measurements while the Fmins below 2 GHz

have been extrapolated. The Fmin values are

based on a set of 16 noise figure measure-

ments made at 16 different impedances using

an ATN NP5 test system. From these

measurements a true Fmin is calculated.

Refer to the noise parameter application

section for more information.

ATF-54143 Typical Performance Curves, continued

Note:

1. Fmin values at 2 GHz and higher are based on

measurements while the Fmins below 2 GHz

have been extrapolated. The Fmin values are

based on a set of 16 noise figure measure-

ments made at 16 different impedances using

an ATN NP5 test system. From these

measurements a true Fmin is calculated.

Refer to the noise parameter application

section for more information.

ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,

= 3V, I

= 60 mA

Freq ΓOut_Mag.

[1]

ΓOut_Ang.

[1]

OIP3 P1dB

(GHz) (Mag) (Degrees) (dBm) (dBm)

0.9 0.017 115 35.54 18.4

2.0 0.026 -85 36.23 20.38

3.9 0.013 173 37.54 20.28

5.8 0.025 102 35.75 18.09

Note:

1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

Figure 17. P1dB vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25°C

-40°C

85°C

FREQUENCY (GHz)

P1dB (dBm)

0621453

20.5

19.5

18.5

17.5

Figure 18. Fmin

[1]

vs. Frequency and I

at 3V.

FREQUENCY (GHz)

Fmin (dB)

02145637

60 mA

40 mA

80 mA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 15. Fmin

[2]

vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25°C

-40°C

85°C

FREQUENCY (GHz)

Fmin (dB)

0621453

1.5

1.0

0.5

Figure 16. OIP3 vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25°C

-40°C

85°C

FREQUENCY (GHz)

OIP3 (dBm)

0621453

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2022-05-07

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