ncsu-cdk-1.6.0.beta.tar.gz_1.6.0_cadencelibrary_cadencevirtuos-网络攻防代码类资源-CSDN文库

版权申诉

52 浏览量 2022-07-14 17:03:18 上传评论收藏 2.87MB GZ 举报

身份认证购VIP最低享 7 折!

领优惠券(最高得80元）

共4743个文件

tag：1389个

oa：1340个

dm：1205个

资源详情

资源评论

资源推荐

收起资源包目录

ncsu-cdk-1.6.0.beta.tar.gz_1.6.0_cadence library_cadence virtuos （4743个子文件）

00_README_00 401B

layerDefn.all 10KB

ami06N 2KB

ami06P 2KB

ami16N 2KB

ami16P 2KB

artSimInfoCDF.att 58KB

artSimInfoCDF.att 52KB

artSimInfoCDF.att 47KB

artSimInfoCDF.att 27KB

artSimInfoCDF.att 26KB

artSimInfoCDF.att 25KB

artSimInfoCDF.att 24KB

artSimInfoCDF.att 22KB

artSimInfoCDF.att 19KB

artSimInfoCDF.att 18KB

artSimInfoCDF.att 16KB

artSimInfoCDF.att 15KB

artSimInfoCDF.att 14KB

artSimInfoCDF.att 13KB

artSimInfoCDF.att 12KB

artSimInfoCDF.att 11KB

artSimInfoCDF.att 10KB

artSimInfoCDF.att 9KB

artSimInfoCDF.att 8KB

artSimInfoCDF.att 7KB

artSimInfoCDF.att 5KB

artSimInfoCDF.att 4KB

artSimInfoCDF.att 3KB

共 4743 条

<HTML> <HEAD> <TITLE>MOSIS file ami-abn/t1az-params.txt</TITLE> <STYLE></STYLE> </HEAD> <BODY BGCOLOR="#FFFBEC" BACKGROUND="/Graphics/background-isi.jpg"><PRE> MOSIS PARAMETRIC TEST RESULTS RUN: T1AZ VENDOR: AMI TECHNOLOGY: SCN15 FEATURE SIZE: 1.6 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: American Microsystems, Inc. 1.5 micron AB(X) TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 4.0/1.6 Vth 0.61 -0.97 volts SHORT 20.0/1.6 Idss 184 -71 uA/um Vth 0.57 -0.91 volts Vpt 10.0 -10.0 volts WIDE 20.0/1.6 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.60 -0.86 volts Vjbkd 17.0 -14.6 volts Ijlk <50.0 <50.0 pA Gamma 0.64 0.47 V^0.5 K' (Uo*Cox/2) 36.1 -12.1 uA/V^2 Low-field Mobility 641.91 215.15 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask and etch bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL ----------------- ------- SCN (lambda=0.6) 0.00 SCN (lambda=0.8) 0.00 AMI_ABN 0.00 POLY2 TRANSISTORS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 4.8/3.2 Vth 0.92 -1.19 volts SHORT 9.6/3.2 Vth 0.90 -1.13 volts LARGE 28.8/28. Vth 0.90 -1.10 volts K' (Uo*Cox/2) 22.6 -7.2 uA/V^2  FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 volts BIPOLAR PARAMETERS W/L NPN UNITS 2X1 2X1 Beta 117 V_early 50.5 volts Vce,sat 0.2 volts 2X2 2X2 Beta 118 V_early 50.4 volts Vce,sat --- volts 2X4 2X4 Beta 118 V_early 50.2 volts 2X8 2X8 Beta 119 V_early 50.0 volts Vce,sat --- volts BVceo 12.2 volts BVcbo 29.2 volts BVebo 7.8 volts PROCESS PARAMETERS N+ACTV P+ACTV POLY POLY2 PBASE MTL1 MTL2 UNITS Sheet Resistance 51.8 76.4 27.3 21.4 2006.8 0.05 0.03 ohms/sq Contact Resistance 60.1 45.3 26.3 14.9 0.05 ohms Gate Oxide Thickness 307 angstrom PROCESS PARAMETERS N_WELL UNITS Sheet Resistance 1637 ohms/sq Contact Resistance ohms CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY POLY2 M1 M2 N_WELL UNITS Area (substrate) 293 298 36 24 15 53 aF/um^2 Area (N+active) 1124 723 49 26 aF/um^2 Area (P+active) 1107 716 aF/um^2 Area (poly) 581 44 22 aF/um^2 Area (poly2) 44 aF/um^2 Area (metal1) 40 aF/um^2 Fringe (substrate) 80 154 30 38 aF/um Fringe (poly) 56 47 aF/um Fringe (metal1) 60 aF/um Overlap (N+active) 175 aF/um Overlap (P+active) 209 aF/um  CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.83 volts Vinv 1.5 2.14 volts Vol (100 uA) 2.0 0.31 volts Voh (100 uA) 2.0 4.54 volts Vinv 2.0 2.35 volts Gain 2.0 -15.87 Ring Oscillator Freq. DIV64 (31-stg,5.0V) 36.93 MHz Ring Oscillator Power DIV64 (31-stg,5.0V) 1.52 uW/MHz/gate  T1AZ SPICE LEVEL3 PARAMETERS * * DATE: Dec 18/01 * LOT: T1AZ WAF: 5101 * DIE: N_Area_Fring DEV: N3740/10 * Temp= 27 .MODEL CMOSN NMOS ( LEVEL = 3 + TOX = 3.07E-8 NSUB = 2.75325E15 GAMMA = 0.7620845 + PHI = 0.7 VTO = 0.6298903 DELTA = 0.8569392 + UO = 702.9336344 ETA = 9.99916E-4 THETA = 0.0734963 + KP = 7.195017E-5 VMAX = 2.766785E5 KAPPA = 0.5 + RSH = 0.0474566 NFS = 6.567094E11 TPG = 1 + XJ = 3E-7 LD = 4.271014E-12 WD = 7.34313E-7 + CGDO = 1.75E-10 CGSO = 1.75E-10 CGBO = 1E-10 + CJ = 2.944613E-4 PB = 0.9048351 MJ = 0.5 + CJSW = 1.236957E-10 MJSW = 0.05 ) *