ncsu-cdk-1.6.0.beta.tar.gz_1.6.0_cadencelibrary_cadencevirtuos

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1.6.0

cadence_virtuoso

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ncsu-cdk-1.6.0.beta.tar.gz_1.6.0_cadence library_cadence virtuos （2000个子文件）

00_README_00 401B

layerDefn.all 10KB

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<HTML> <HEAD> <TITLE>MOSIS file ami-abn/t1az-params.txt</TITLE> <STYLE></STYLE> </HEAD> <BODY BGCOLOR="#FFFBEC" BACKGROUND="/Graphics/background-isi.jpg"><PRE> MOSIS PARAMETRIC TEST RESULTS RUN: T1AZ VENDOR: AMI TECHNOLOGY: SCN15 FEATURE SIZE: 1.6 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: American Microsystems, Inc. 1.5 micron AB(X) TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 4.0/1.6 Vth 0.61 -0.97 volts SHORT 20.0/1.6 Idss 184 -71 uA/um Vth 0.57 -0.91 volts Vpt 10.0 -10.0 volts WIDE 20.0/1.6 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.60 -0.86 volts Vjbkd 17.0 -14.6 volts Ijlk <50.0 <50.0 pA Gamma 0.64 0.47 V^0.5 K' (Uo*Cox/2) 36.1 -12.1 uA/V^2 Low-field Mobility 641.91 215.15 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask and etch bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL ----------------- ------- SCN (lambda=0.6) 0.00 SCN (lambda=0.8) 0.00 AMI_ABN 0.00 POLY2 TRANSISTORS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 4.8/3.2 Vth 0.92 -1.19 volts SHORT 9.6/3.2 Vth 0.90 -1.13 volts LARGE 28.8/28. Vth 0.90 -1.10 volts K' (Uo*Cox/2) 22.6 -7.2 uA/V^2  FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 volts BIPOLAR PARAMETERS W/L NPN UNITS 2X1 2X1 Beta 117 V_early 50.5 volts Vce,sat 0.2 volts 2X2 2X2 Beta 118 V_early 50.4 volts Vce,sat --- volts 2X4 2X4 Beta 118 V_early 50.2 volts 2X8 2X8 Beta 119 V_early 50.0 volts Vce,sat --- volts BVceo 12.2 volts BVcbo 29.2 volts BVebo 7.8 volts PROCESS PARAMETERS N+ACTV P+ACTV POLY POLY2 PBASE MTL1 MTL2 UNITS Sheet Resistance 51.8 76.4 27.3 21.4 2006.8 0.05 0.03 ohms/sq Contact Resistance 60.1 45.3 26.3 14.9 0.05 ohms Gate Oxide Thickness 307 angstrom PROCESS PARAMETERS N_WELL UNITS Sheet Resistance 1637 ohms/sq Contact Resistance ohms CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY POLY2 M1 M2 N_WELL UNITS Area (substrate) 293 298 36 24 15 53 aF/um^2 Area (N+active) 1124 723 49 26 aF/um^2 Area (P+active) 1107 716 aF/um^2 Area (poly) 581 44 22 aF/um^2 Area (poly2) 44 aF/um^2 Area (metal1) 40 aF/um^2 Fringe (substrate) 80 154 30 38 aF/um Fringe (poly) 56 47 aF/um Fringe (metal1) 60 aF/um Overlap (N+active) 175 aF/um Overlap (P+active) 209 aF/um  CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.83 volts Vinv 1.5 2.14 volts Vol (100 uA) 2.0 0.31 volts Voh (100 uA) 2.0 4.54 volts Vinv 2.0 2.35 volts Gain 2.0 -15.87 Ring Oscillator Freq. DIV64 (31-stg,5.0V) 36.93 MHz Ring Oscillator Power DIV64 (31-stg,5.0V) 1.52 uW/MHz/gate  T1AZ SPICE LEVEL3 PARAMETERS * * DATE: Dec 18/01 * LOT: T1AZ WAF: 5101 * DIE: N_Area_Fring DEV: N3740/10 * Temp= 27 .MODEL CMOSN NMOS ( LEVEL = 3 + TOX = 3.07E-8 NSUB = 2.75325E15 GAMMA = 0.7620845 + PHI = 0.7 VTO = 0.6298903 DELTA = 0.8569392 + UO = 702.9336344 ETA = 9.99916E-4 THETA = 0.0734963 + KP = 7.195017E-5 VMAX = 2.766785E5 KAPPA = 0.5 + RSH = 0.0474566 NFS = 6.567094E11 TPG = 1 + XJ = 3E-7 LD = 4.271014E-12 WD = 7.34313E-7 + CGDO = 1.75E-10 CGSO = 1.75E-10 CGBO = 1E-10 + CJ = 2.944613E-4 PB = 0.9048351 MJ = 0.5 + CJSW = 1.236957E-10 MJSW = 0.05 ) *