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Features

• Low-voltage and Standard-voltage Operation

– 2.7 (V

= 2.7V to 5.5V)

– 1.8 (V

= 1.8V to 5.5V)

• Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K),

1024 x 8 (8K) or 2048 x 8 (16K)

• Two-wire Serial Interface

• Schmitt Trigger, Filtered Inputs for Noise Suppression

• Bidirectional Data Transfer Protocol

• 100 kHz (1.8V) and 400 kHz (2.7V, 5V) Compatibility

• Write Protect Pin for Hardware Data Protection

• 8-byte Page (1K, 2K), 16-byte Page (4K, 8K, 16K) Write Modes

• Partial Page Writes Allowed

• Self-timed Write Cycle (5 ms max)

• High-reliability

– Endurance: 1 Million Write Cycles

– Data Retention: 100 Years

• Automotive Devices Available

• 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead

SOT23, 8-lead TSSOP and 8-ball dBGA2 Packages

• Die Sales: Wafer Form, Waffle Pack and Bumped Wafers

Description

The AT24C01A/02/04/08A/16A provides 1024/2048/4096/8192/16384 bits of serial

electrically erasable and programmable read-only memory (EEPROM) organized as

128/256/512/1024/2048 words of 8 bits each. The device is optimized for use in many

industrial and commercial applications where low-power and low-voltage operation

are essential. The AT24C01A/02/04/08A/16A is available in space-saving 8-lead

PDIP, 8-lead JEDEC SOIC,

8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead SOT23

(AT24C01A/AT24C02/AT24C04), 8-lead TSSOP, and 8-ball dBGA2 packages and is

accessed via a Two-wire serial interface. In addition, the entire family is available in

2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions.

Table 1. Pin Configuration

Pin Name Function

A0 - A2 Address Inputs

SDA Serial Data

SCL Serial Clock Input

WP Write Protect

NC No Connect

GND Ground

VCC Power Supply

Two-wire

Serial EEPROM

1K (128 x 8)

2K (256 x 8)

4K (512 x 8)

8K (1024 x 8)

16K (2048 x 8)

AT24C01A

(1)

AT24C02

(2)

AT24C04

AT24C08A

AT24C16A

(3)

0180Z1–SEEPR–5/07

Notes: 1. Not Recommended for

new design; Please

refer to AT24C01B

datasheet.

2. Not Recommended for

new design; Please

refer to AT24C02B

datasheet.

3. Not Recommended for

new design; Please

refer to AT24C16B

datasheet

8-lead SOIC

GND

VCC

SCL

SDA

8-lead PDIP

GND

SCL

8-lead Ultra Thin Mini-MAP

(MLP 2x3)

Bottom View

SCL

5-lead SOT23

SCL

SDA

8-ball dBGA2

Bottom View

VCC

SCL

SDA

GND

8-lead TSSOP

AT24C01A/02/04/08A/16A

0180Z1–SEEPR–5/07

Figure 1. Block Diagram

Absolute Maximum Ratings

Operating Temperature..................................–55°C to +125°C

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability.

Storage Temperature .....................................–65°C to +150°C

Voltage on Any Pin

with Respect to Ground ....................................–1.0V to +7.0V

Maximum Operating Voltage .......................................... 6.25V

DC Output Current........................................................ 5.0 mA

AT24C01A/02/04/08A/16A

0180Z1–SEEPR–5/07

Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each

EEPROM device and negative edge clock data out of each device.

SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is

open-drain driven and may be wire-ORed with any number of other open-drain or open-

collector devices.

DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device

address inputs that are hard wired for the AT24C01A and the AT24C02. As many as

eight 1K/2K devices may be addressed on a single bus system (device addressing is

discussed in detail under the Device Addressing section).

The AT24C04 uses the A2 and A1 inputs for hard wire addressing and a total of four 4K

devices may be addressed on a single bus system. The A0 pin is a no connect and can

be connected to ground.

The AT24C08A only uses the A2 input for hardwire addressing and a total of two 8K

devices may be addressed on a single bus system. The A0 and A1 pins are no connects

and can be connected to ground.

The AT24C16A does not use the device address pins, which limits the number of

devices on a single bus to one. The A0, A1 and A2 pins are no connects and can be

connected to ground.

WRITE PROTECT (WP): The AT24C01A/02/04/08A/16A has a Write Protect pin that

provides hardware data protection. The Write Protect pin allows normal Read/Write

operations when connected to ground (GND). When the Write Protect pin is connected

to V

, the write protection feature is enabled and operates as shown in Table 2.

Table 2. Write Protect

Memory Organization AT24C01A, 1K SERIAL EEPROM: Internally organized with 16 pages of 8 bytes each,

the 1K requires a 7-bit data word address for random word addressing.

AT24C02, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each,

the 2K requires an 8-bit data word address for random word addressing.

AT24C04, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each,

the 4K requires a 9-bit data word address for random word addressing.

AT24C08A, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes

each, the 8K requires a 10-bit data word address for random word addressing.

AT24C16A, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes

each, the 16K requires an 11-bit data word address for random word addressing.

WP Pin

Status

Part of the Array Protected

24C01A 24C02 24C04 24C08A 24C16A

At V

Full (1K)

Array

Full (2K)

Array

Full (4K)

Array

Full (8K)

Array

Full (16K)

Array

At GND Normal Read/Write Operations

AT24C01A/02/04/08A/16A

0180Z1–SEEPR–5/07

Note: 1. This parameter is characterized and is not 100% tested.

Note: 1. V

min and V

max are reference only and are not tested.

Table 3. Pin Capacitance

(1)

Applicable over recommended operating range from T

= 25°C, f = 1.0 MHz, V

= +1.8V

Symbol Test Condition Max Units Conditions

I/O

Input/Output Capacitance (SDA) 8 pF V

I/O

= 0V

Input Capacitance (A

, A

, SCL) 6 pF V

= 0V

Table 4. DC Characteristics

Applicable over recommended operating range from: T

= –40°C to +85°C, V

= +1.8V to +5.5V, V

= +1.8V to +5.5V

(unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Units

CC1

Supply Voltage 1.8 5.5 V

CC2

Supply Voltage 2.7 5.5 V

CC3

Supply Voltage 4.5 5.5 V

Supply Current V

= 5.0V READ at 100 kHz 0.4 1.0 mA

Supply Current V

= 5.0V WRITE at 100 kHz 2.0 3.0 mA

SB1

Standby Current V

= 1.8V V

= V

or V

0.6 3.0 µA

SB2

Standby Current V

= 2.5V V

= V

or V

1.4 4.0 µA

SB3

Standby Current V

= 2.7V V

= V

or V

1.6 4.0 µA

SB4

Standby Current V

= 5.0V V

= V

or V

8.0 18.0 µA

Input Leakage Current V

= V

or V

0.10 3.0 µA

Output Leakage Current V

OUT

= V

or V

0.05 3.0 µA

Input Low Level

(1)

–0.6 V

x 0.3 V

Input High Level

(1)

x 0.7 V

+ 0.5 V

OL2

Output Low Level V

= 3.0V I

= 2.1 mA 0.4 V

OL1

Output Low Level V

= 1.8V I

= 0.15 mA 0.2 V

AT24C01A/02/04/08A/16A

0180Z1–SEEPR–5/07

Note: 1. This parameter is characterized.

Table 5. AC Characteristics

Applicable over recommended operating range from T

= –40°C to +85°C, V

= +1.8V to +5.5V, V

= +2.7V to +5.5V,

CL = 1 TTL Gate and 100 pF (unless otherwise noted)

Symbol Parameter

1.8-volt 2.7, 5.0-volt

UnitsMin Max Min Max

SCL

Clock Frequency, SCL 100 400 kHz

LOW

Clock Pulse Width Low 4.7 1.2 µs

HIGH

Clock Pulse Width High 4.0 0.6 µs

Noise Suppression Time

(1)

100 50 ns

Clock Low to Data Out Valid 0.1 4.5 0.1 0.9 µs

BUF

Time the bus must be free before

a new transmission can start

(1)

4.7 1.2 µs

HD.STA

Start Hold Time 4.0 0.6 µs

SU.STA

Start Setup Time 4.7 0.6 µs

HD.DAT

Data In Hold Time 0 0 µs

SU.DAT

Data In Setup Time 200 100 ns

Inputs Rise Time

(1)

1.0 0.3 µs

Inputs Fall Time

(1)

300 300 ns

SU.STO

Stop Setup Time 4.7 0.6 µs

Data Out Hold Time 100 50 ns

Write Cycle Time 5 5 ms

Endurance

(1)

5.0V, 25°C, Byte Mode 1M 1M

Write

Cycles

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