CNY70
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 30-Jul-12
1
Document Number: 83751
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Reflective Optical Sensor with Transistor Output
DESCRIPTION
The CNY70 is a reflective sensor that includes an infrared
emitter and phototransistor in a leaded package which
blocks visible light.
FEATURES
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 7 x 7 x 6
• Peak operating distance: < 0.5 mm
• Operating range within > 20 % relative
collector current: 0 mm to 5 mm
• Typical output current under test: I
C
= 1 mA
• Emitter wavelength: 950 nm
• Daylight blocking filter
• Lead (Pb)-free soldering released
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Optoelectronic scanning and switching devices i.e., index
sensing, coded disk scanning etc. (optoelectronic
encoder assemblies).
Notes
(1)
CTR: current transfere ratio, I
out
/I
in
(2)
Conditions like in table basic charactristics/sensors
Note
(1)
MOQ: minimum order quantity
ED
Top view
Marking area
19158_1
21835
PRODUCT SUMMARY
PART NUMBER
DISTANCE FOR
MAXIMUM CTR
rel
(1)
(mm)
DISTANCE RANGE FOR
RELATIVE I
out
> 20 %
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST
(2)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
CNY70 0 0 to 5 1 Yes
ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME
(1)
REMARKS
CNY70 Tube MOQ: 4000 pcs, 80 pcs/tube -
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
COUPLER
Total power dissipation T
amb
≤ 25 °C P
tot
200 mW
Ambient temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Distance to case 2 mm, t £ 5 s T
sd
260 °C
INPUT (EMITTER)
Reverse voltage V
R
5V
Forward current I
F
50 mA
Forward surge current t
p
≤ 10 μs I
FSM
3A
Power dissipation T
amb
≤ 25 °C P
V
100 mW
Junction temperature T
j
100 °C