Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 75 100 °C/W
IRLML6401
HEXFET
®
Power MOSFET
Thermal Resistance
V
DSS
= -12V
R
DS(on)
= 0.05Ω
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
04/29/03
www.irf.com 1
Parameter Max. Units
V
DS
Drain- Source Voltage -12 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -4.3
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -3.4 A
I
DM
Pulsed Drain Current -34
P
D
@T
A
= 25°C Power Dissipation 1.3
P
D
@T
A
= 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
E
AS
Single Pulse Avalanche Energy 33 mJ
V
GS
Gate-to-Source Voltage ± 8.0 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Description
Micro3
l 1.8V Gate Rated
S
G
1
2
D
3
PD - 93756D