2
技术信息/TechnicalInformation
FS400R07A1E3
IGBT-模块
IGBT-modules
preparedby:JZ
approvedby:LB
dateofpublication:2013-11-05
revision:3.1
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
T
vj
= 25°C V
CES
650 V
连续集电极直流电流
ContinuousDCcollectorcurrent
T
C
= 65°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
I
C nom
I
C
400
500
A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
800 A
总功率损耗
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 175°C P
tot
1250 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
V
GES
+/-20 V
特征值/CharacteristicValues
min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
V
CE sat
1,45
1,60
1,70
1,90
V
V
V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
栅极阈值电压
Gatethresholdvoltage
I
C
= 6,40 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,9 5,8 6,5 V
栅极电荷
Gatecharge
V
GE
= -15 V ... +15 V Q
G
4,30 µC
内部栅极电阻
Internalgateresistor
T
vj
= 25°C R
Gint
1,0 Ω
输入电容
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
26,0 nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
0,76 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
V
CE
= 650 V, V
GE
= 0 V, T
vj
= 25°C I
CES
1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
I
C
= 400 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 1,8 Ω
t
d on
0,10
0,11
0,12
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
上升时间(电感负载)
Risetime,inductiveload
I
C
= 400 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 1,8 Ω
t
r
0,08
0,08
0,08
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
I
C
= 400 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 1,8 Ω
t
d off
0,46
0,50
0,50
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
下降时间(电感负载)
Falltime,inductiveload
I
C
= 400 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 1,8 Ω
t
f
0,05
0,07
0,08
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
I
C
= 400 A, V
CE
= 300 V, L
S
= 25 nH
V
GE
= ±15 V, di/dt = 5500 A/µs (T
vj
= 150°C)
R
Gon
= 1,8 Ω
E
on
2,90
4,20
4,50
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
I
C
= 400 A, V
CE
= 300 V, L
S
= 25 nH
V
GE
= ±15 V, du/dt = 3000 V/µs (T
vj
= 150°C)
R
Goff
= 1,8 Ω
E
off
13,0
16,0
17,0
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
短路数据
SCdata
V
GE
≤ 15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
2800
2000
A
A
T
vj
= 25°C
T
vj
= 150°C
t
P
≤ 8 µs,
t
P
≤ 6 µs,
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT R
thJC
0,12 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,08 K/W
在开关状态下温度
Temperatureunderswitchingconditions
T
vj op
-40 150 °C
