2
技术信息/TechnicalInformation
FF100R12KS4
IGBT-模块
IGBT-modules
preparedby:AC
approvedby:WR
dateofpublication:2013-10-02
revision:3.4
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
T
vj
= 25°C V
CES
1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
100
150
A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
200 A
总功率损耗
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150 P
tot
780 W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
V
GES
+/-20 V
特征值/CharacteristicValues
min. typ. max.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
I
C
= 100 A, V
GE
= 15 V
I
C
= 100 A, V
GE
= 15 V
V
CE sat
3,20
3,85
3,70
V
V
T
vj
= 25°C
T
vj
= 125°C
栅极阈值电压
Gatethresholdvoltage
I
C
= 4,00 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,5 5,5 6,5 V
栅极电荷
Gatecharge
V
GE
= -15 V ... +15 V Q
G
1,10 µC
内部栅极电阻
Internalgateresistor
T
vj
= 25°C R
Gint
2,5 Ω
输入电容
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
6,50 nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
0,42 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 9,1 Ω
t
d on
0,10
0,11
µs
µs
T
vj
= 25°C
T
vj
= 125°C
上升时间(电感负载)
Risetime,inductiveload
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 9,1 Ω
t
r
0,06
0,07
µs
µs
T
vj
= 25°C
T
vj
= 125°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 9,1 Ω
t
d off
0,53
0,55
µs
µs
T
vj
= 25°C
T
vj
= 125°C
下降时间(电感负载)
Falltime,inductiveload
I
C
= 100 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 9,1 Ω
t
f
0,03
0,04
µs
µs
T
vj
= 25°C
T
vj
= 125°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
I
C
= 100 A, V
CE
= 600 V, L
S
= 60 nH
V
GE
= ±15 V, di/dt = 1000 A/µs
R
Gon
= 9,1 Ω
E
on
9,50
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
I
C
= 100 A, V
CE
= 600 V, L
S
= 60 nH
V
GE
= ±15 V
R
Goff
= 9,1 Ω
E
off
7,70
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
短路数据
SCdata
V
GE
≤ 15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
650
A
T
vj
= 125°C
t
P
≤ 10 µs,
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT R
thJC
0,16 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,03 K/W
在开关状态下温度
Temperatureunderswitchingconditions
T
vj op
-40 125 °C