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Passive Q-switching in an erbium-doped fiber laser using

tungsten sulphoselenide as a saturable absorber

H. Ahmad*, Z. C. Tiu, and S. I. Ooi

Photonics Research Centre, University of Malaya, Kuala Lumpur 50603, Malaysia

*Corresponding author: harith@um.edu.my

Received October 30, 2017; accepted December 22, 2017; posted online January 31, 2018

A highly stable Q-switched laser incorporating a mechanically exfoliated tungsten sulphoselenide (WSSe) thin

sheet saturable absorber (SA) is proposed and demonstrated. The SA assembly, formed by sandwiching a thin

WSSe sheet between two fiber ferrules within the erbium-doped fiber laser, is used to effectively modulate the

laser cavity losses. The WSSe-based SA has a saturation intensity of ∼0.006 MW∕cm

and a modulation depth

of 7.8%, giving an optimum Q-switched laser output with a maximum repetition rate of 61.81 kHz and a mini-

mum pulse width of 2.6 μs. The laser’s highest output power of 0.45 mW and highest pulse energy of 7.31 nJ are

achieved at the maximum pump power of 280.5 mW. The tunability of the cavity’s output at the maximum

pump power is analyzed with a C-band tunable bandpass filter, giving a broad tunable range of ∼40 nm, from

1530 nm to 1570 nm. The output performance of the tunable Q-switched laser correlates well with the gain

spectrum of erbium-doped fibers, with the shift in the gain profile as a result of the saturated SA.

OCIS codes: 140.3500, 140.3510, 140.3540, 140.3600.

doi: 10.3788/COL201816.020009.

In recent years, two-dimensional (2D) semiconductor

materials such as graphene

[1]

, transition metal dichalcoge-

nides (TMDs)

[2]

, and topological insulators (TIs)

[3]

have re-

ceived significant attentio n for various applications in the

field of photonics and optoelectronics. These materials

find a use as saturable absorbers (SAs) for the passive gen-

eration of pulsed laser outputs due to their low saturation

intensity, ultrafast carrier dynamics, as we ll as great pho-

toluminescence of 2D materials

[4]

. The ability of 2D mate-

rials to modulate intracavity losses in a fiber laser system

contributes to their successful incorporation in various

Q-switching and mode-locking systems

[1,2]

. Specifically,

TMDs have seen more applications in Q-switching and

mode-locking systems compared to other 2D materials

due to their better performance as well as their layer-

dependent absorption properties, which gives TMDs an

advantage over most other 2D materials.

TMD materials are generally represented by the for-

mula MX

, where M represents the transition metal atom

and X represents the chalcogen atom

[5]

. Within the TMD

layer, the two X atoms hold onto each M atom by a strong

covalent bond, while only a weak van der Waals force

holds the TMD layers to each other. The weak interlayer

forces of TMDs make them easy to fabricate into a single

or few layer form using simple exfoliation methods

[6]

Furthermore, by changing the number of layers in these

TMD materials, the energy bandgap can be tuned from

indirect to direct feature

[7]

. This tuning ability, combined

with high third-order optical nonlinearities, and ultrafast

carrier dynamics give TMDs a high potential for various

broadband absorber photonics and optoelectronics appli-

cations. In particular MoS

, MoSe

,WS

, and WSe

have

shown a tremendous potential for use as SAs in photonics

applications.

Recently, breakthroughs in the preparation and fabrica-

tion process of TMDs for SA applications have been able to

further enhance their optical properties. The improvements

in the sample preparation process have lead to the existence

of TMD alloys with the chemical formula MX

2ð1−xÞ

where x represents the composition ratio

[8]

.Thisnew

category of TMD alloys has a bandgap tuning range over

the absorption wavelength that is dependent on the

composition ratio x

[8]

. Furthermore, these TMDs are very

stable due to their ordered alloy structures

[9]

.Owingto

their attractive output characteristics, TMD alloys have

been studied in previous works

[10]

, but to date there has been

no known exploration of the feasibility of the WS

2ð1−xÞ

alloy as an SA.

In this work, a van der Waals heterostructure-based

2ð1−xÞ

composite SA with a composition ratio of

0.5 is fabricated from a bulk crystal by simple mechanical

exfoliation. The exfoliated few-layer WSSe SA is then in-

corporated into an erbiu m-doped fiber laser (EDFL) cav-

ity operating at 1.56 μm. From the nonlinear optical

characterization of the WSSe SA by the twin-detection

technique, a saturation intensity of 0.006 MW∕cm

and

a modulation depth of ∼7.80% were observed. The ability

of the WSSe SA to modulate intracavity losses results in

the passive generation of Q-switched pulses in the pro-

posed EDFL cavity.

A sample of the mechanically exfoliated few-layer WSSe

crystal is first characterized by X-ray diffraction (XRD)

using a PANalytical EMPY REAN X-ray diffractometer.

Figure

1 shows the detailed XRD patterns of the charac-

terized WSSe sample at an excitation wavelength of

1.5406 Å. The WSSe sample shows diffraction peaks

at 13.80°, 29.15°, 38.76°, 42.80°, 48.60°, and 57.84°

along (002), (004), (103), (006), (105), and (110),

COL 16(2), 020009(2018) CHINESE OPTICS LETTERS February 10, 2018

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