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Thermo-optic waveguide gate switch arrays based on direct UV-wri...
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Novel thermo-optic waveguide gate switch arrays were designed and fabricated based on the direct UV-written technique. Highly fluorinated low-loss photopolymers and organic-inorganic grafting materials were used as the waveguide core and cladding, respectively. The low absorption loss characteristics and excellent thermal stabilities of the core and cladding materials were obtained. The rectangular waveguides and arrayed electrode heaters have been theoretically designed and numerically simulate
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Thermo-optic waveguide gate switch arrays based
on direct UV-written highly fluorinated
low-loss photopolymer
Xiaoyan Niu,
1
Yang Zheng,
1
Yunlong Gu,
1
Changming Chen,
1,
* Zhenzhen Cai,
2
Zuosen Shi,
2
Fei Wang,
1
Xiaoqiang Sun,
1
Zhanchen Cui,
2
and Daming Zhang
1
1
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering,
Jilin University, Changchun 130012, China
2
Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
*Corresponding author: chencm@jlu.edu.cn
Received 11 June 2014; revised 2 September 2014; accepted 2 September 2014;
posted 3 September 2014 (Doc. ID 213896); published 2 October 2014
Novel thermo-optic waveguide gate switch arrays were designed and fabricated based on the direct UV-
written technique. Highly fluorinated low-loss photopolymers and organic–inorganic grafting materials
were used as the waveguide core and cladding, respectively. The low absorption loss characteristics and
excellent thermal stabilities of the core and cladding materials were obtained. The rectangular wave-
guides and arrayed electrode heaters have been theoretically designed and numerically simulated to
realize single-mode transmission. The propagation loss of a 4-μm-wide straight waveguide was measured
as 0.15 dB∕cm. The insertion loss of the device was directly measured to be about 5.5 dB. The rise and fall
times of the device applied 100 Hz square-wave voltage were obtained as 1.068 and 1.245 ms, respec-
tively. The switching power was about 9.2 mW, and the extinction ratio was 17.8 dB. The low-loss inte-
grated switch arrays are suitable for realizing large-scale photonic integrated circuits. © 2014 Optical
Society of America
OCIS codes: (130.4815) Optical switching devices; (160.5335) Photosensitive materials; (230.3120)
Integrated optics devices; (130.5460) Polymer waveguides.
http://dx.doi.org/10.1364/AO.53.006698
1. Introduction
Optical switches as the key component of realizing
channel selection and conversion function in optical
transmission network, have been widely used on the
optical link layer, such as in optical cross connect
(OXC), optical add–drop multiplexer (OADM), opti-
cal network monitoring, and on-chip optical intercon-
nection [
1–5]. With the increasing demands for low
cost and high performance of the optical chips, the
photonic integrated circuits (PICs)-based monolithic
integrated optica l devices have gradually drawn ex-
tensive attention in recent years [
6–8]. Large-scale
switch arrays based on the photo nic integration tech-
nique are the critical devices for implementation
of OXC and OADM between the optical network
nodes [
9].
Optical switches have been developed rapidly in
the past few years [
10–12], in which the thermo-optic
(TO) waveguide switches utilizing photopolymer ma-
terials are extraordinarily attractive, on account of
its low cost, lower power consumption, and simple
preparation tech nique [
12–17]. The bis-phenol-A no-
volac resin (SU-8) as a negative near-ultraviolet pho-
toresist has been used intensively to fabricate kinds
of optical waveguide devices since the competitive
advantages it took as reported in the literature
[
18–20]. The good stability, excellent mechanical
properties, and biocompatibility of SU-8 have made
1559-128X/14/296698-08$15.00/0
© 2014 Optical Society of America
6698 APPLIED OPTICS / Vol. 53, No. 29 / 10 October 2014
it outstanding waveguide material for PICs [21,22].
But the relatively high absorption loss of SU-8 photo-
resist at the optical communication wavelengths
limits its application in large-scale PICs. It is well
known that the absorption loss of the high molecular
material mainly comes from vibration overtones of
the carbon–hydrogen (C−H) bond, while fluorinated
polymers with the C–H bond replaced by C–F bonds
are capable of drastically reducing the optical loss
[
23,24]. Furthermore, fluorinated photopolymer ma-
terials have several advantages, such as low surface
energy and moisture absorption, good thermal and
chemical stability, which make them more competi -
tive in fields of optical applications [
25–27].
In this paper, novel TO waveguide gate switch ar-
rays were successfully designed and fabricated by
the direct UV-written technique. Novel highly fluori-
nated photopolymer and organic–inorganic grafting
material were synthesized as waveguide core and
cladding, respectively. The low absorption loss and
good thermal stability of the core and cladding
materials were obtained. Optical properties of the
proposed switch arrays were analyzed, simulated,
and measured. The fabrication process of the device
was described in detail. Optimized structural charac-
teristics of the waveguides and electrode heaters
were provided. The excellent performances of the
switch arrays were achieved.
2. Experiments
A. Materials
The proposed high ly fluorinated low-loss photopoly-
mer is composed of fluorinated bis-phenol-A novolac
resin (FSU-8) and fluorinated polycarbonate epoxy
resin (FPER). Since the FPER is a highly fluorinated
photopolymer and can be patterned by the direct UV-
written techniques, it is relatively superior to other
fluorinated materials in optical application. To ad-
just the refractive index, the FSU-8 was synthesized
and doped into FPER. Furthermo re, the fluorine con-
tent of the mixture was improved significantly after
doping, which was very conducive to the two-photon
polymerization cross-linking reaction in the UV-
written process [
28]. Figure 1 shows the near-
infrared abso rption spectrums of the FSU-8/FPER
with different FSU-8 compositions compared to
commercial SU-8 photoresist. Obviously there exist
certain absorption peaks for commercial SU-8 photo-
resist at the near-infrared region, while there is
almost no absorption for the FSU-8/FPER. And the
excellent low-loss characteristic greatly enables the
mixture to be used in the photonic integrated chips
which were contributed for optical communications,
even for the visible light communication. It can be
indicated that the spectral absorption curves of these
four kinds of doping ratios 0%, 25%, 50%, 75%,
present nearly the same shape and trend. It is dem-
onstrated that the FSU-8 barely has impact on the
low-loss characteristics shown by FPE R. As given
in Table
1, Tg is the glass transition temperature
of uncross-linked polymers measured by differential
scanning calo rimetry (DSC); Td
C
and Td
D
are the on-
set temperature for 5% weight loss of uncross-linked
and cross-linked polymers measured by thermal
gravity analysis (TGA), respectively. It can be noted
that the Tg of all the four kinds of mixtures is above
150°C, which is higher than the fabricating temper-
ature of the device. Furthermore, the very high Td
C
and Td
D
of the FSU-8/FPER is advantageous to
improve the thermal stability of the chip.
The organic–inorganic grafting poly(methylmetha-
crylate) (PMMA) material was used as the waveguide
cladding material due to its good thermal stability,
low processing temperatures, and compatibility
with established silicon manufacturing procedures.
The functional organic–inorganic network was real-
ized by involving silica-based inorganic network into
cross-linkable PMMA with grafting modification
techniques. As shown in Fig.
2, the SiO
2
-TiO
2
-PMMA
cladding material was chemically synthesized by
hydrolysis and polycondensation of 3-methacryloxy-
proyltrimethoxysilane (MAPTMS, KH 570), (3-
glycidoxypropyl)trimethoxy-silane (GPTMS, KH560),
methylmethacrylate (MMA), epoxypropylmethacry-
late (GMA), tetraethylorthosilicate (TEOS), and tetra-
butyltitanate (TiOC
2
H
5
4
).
The stable SiO
2
-TiO
2
-PMMA films were resistant
to organic solvent. The glass transition temperature
(Tg) of the solgels is measured using the modulated
DSC, as shown in Fig.
3(a). It indicates that the Tg
of the SiO
2
-TiO
2
-PMMA material is about 135°C,
Fig. 1. UV–vis–NIR absorption spectrums of FPER with different
FSU-8 compositions compared to commercial SU-8 photoresist.
Table 1. Thermal Properties of Fluorinated Materials with Different
Content of FSU-8
Mixture
FSU-8
Composition
(wt. %) Tg (°C) Td
C
(°C) Td
D
(°C)
(FSU-8/FPER)-1 0 155.7 270.7 294.9
(FSU-8/FPER)-2 25 158.4 277.7 302.9
(FSU-8/FPER)-3 50 161.9 261.4 300.3
(FSU-8/FPER)-4 75 156.0 271.8 300.0
10 October 2014 / Vol. 53, No. 29 / APPLIED OPTICS 6699
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