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Scanning near-field optical microscopy based phase-change optica...
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2021-02-08
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A novel concept of scanning near-field optical microscopy based phase-change optical memory was proposed to avoid excessive temperature inside the capping layer of probe-based phase-change memory without impairing its attractive storage attributes. An indium tin oxide medium was chosen to be the capping layer of the designed device and its optical properties for different wavelengths and thicknesses were computed by firstprinciple calculations. Combining these calculated parameters with a develo
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