Optical mode study of III–V-nanowire-based
nanophotonic crystals for an integrated
infrared band microlaser
Zhen Lin,* Michel Gendry, and Xavier Letartre
Université de Lyon, Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Ecole Centrale de Lyon,
36 avenue Guy de Collongue, F 69134 Ecully Cedex, France
*Corresponding author: zhenlin_79@hotmail.com
Received April 4, 2014; revised September 19, 2014; accepted September 19, 2014;
posted October 30, 2014 (Doc. ID 209609); published November 26, 2014
In this paper, we study an original strategy to generate an infrared waveband microlaser by an integrated
III–V-nanowire (NW)-based photonic array for on-chip interconnects. The optical modes of the III–V-NW-based
photonic array are investigated for utilization as an all-in-one gain medium, waveguide, and cavity. Adequate
designs of periodic arrays of InP NWs with different polarization TM and TE modes are studied by 3D electro-
magnetic simulation finite difference time domain to optimize the resonant active photonic crystal (hybrid Bloch
modes) in the infrared band at 1.3 μm. According to our calculations, NWs larger than 0.2 μm in diameter are
needed to conceive optic modes inside NW photonics in TM polarization. However, smaller NW photonics, such
as 0.1 μm in diameter, can obtain only the TE mode inside the NWs. This phenomenon is theoretically illustrated
by the dispersive curves of NW-based photonics. It aims at demonstrating that the slow velocity mode inside the
NW photonics will cause amplification of lightwaves and generate microlasers in the infrared band at 1.3 μm.
These studies are of prime importance for further microlaser integration to silicon-on-insulator (SOI) waveguides
for on-chip optical interconnects. © 2014 Chinese Laser Press
OCIS codes: (140.3070) Infrared and far-infrared lasers; (140.4780) Optical resonators; (140.5960) Semicon-
ductor lasers; (140.3945) Microcavities; (230.5298) Photonic crystals.
http://dx.doi.org/10.1364/PRJ.2.000182
1. INTRODUCTION
Silicon is the main material used in semiconductor manufac-
turing today and CMOS technology will probably go on domi-
nating the electronic market for many decades. However, with
the size reduction of transistors, one of the most critical issues
is related to metallic contacts and interconnects. The thermal
budget in the multilayered metallic links above Si transistors
hinders their further miniaturization. A technological break-
through is necessary. The integration of optical links with
active photonic material on the Si wafer for high-speed optical
interchip and intrachip connects is a possible route to eco-
nomic the CMOS industry for low-power consumption with
next-generation communication technologies.
Semiconductor nanowires (NWs) are considered to be the
next frontier for ultrasmall, highly efficient coherent light
source lasers to reduce the footprint of devices for 3D device
integration and hence are being extensively studied in the con-
text of optoelectronic devices [
1–3] and nanophotonic circuits
[
2,4], such as waveguides, LEDs, nanolasers, and optical
switches [
5–18]. Recently, single semiconductor NW lasers
have been realized in various materials, with emission wave-
lengths ranging from the ultraviolet to infrared for their widely
available bandgaps [
1–3]. Stationary photoluminescence (PL)
studies conducted by Reitzenstein et al. [
19] as well as time-
resolved PL studies [
20] have shown good optical properties
for InP NWs grown on Si (001) by metal-organic vapor-phase
epitaxy, which is a good prerequisite for the realization of an
optical emitter. However, NW-array-based photonic lasers
have been rarely studied. Cylindrical active III–V NWs with
a diameter of several hundreds of nanometers and a length
of micrometers can efficiently confine and guide optic waves
inside the gain medium on a nanometer scale, and they can
also allow the integration of optically active III–V semiconduc-
tors onto existing silicon technologies despite a large mis-
match in the lattice constant. The photonic NW array
structure, on the other hand, can form a microsource cavity
to get slow group velocity mode for high optical energy gen-
eration inside a gain medium. All of these properties induce
the possible realization of nanophotonic lasers as coherent
light microsources for integrated on-chip photonics.
Our work proposes an original strategy to generate an infra-
red waveband microlaser by integrated III–V-NW-based pho-
tonic arrays for on-chip interconnects. The optical properties
of NW-based photonic arrays are optimized for utilization as
an all-in-one gain medium, waveguide, and cavity. Adequate
designs of periodic arrays of InP NWs with different polariza-
tion TM and TE modes were studied by 3D electromagnetic
simulation finite-difference time-domain (FDTD). The geo-
metrical parameters of this architecture are optimized to ob-
tain modes in the infrared band. A regular array of such NWs
will form a resonant active photonic crystal (hybrid Bloch
modes). Our work aims at demonstrating that, under optical
pumping, the slow velocity mode inside the NW photonics will
cause amplification of lightwaves and generate a microlaser in
the infrared band at 1.3 μm. This ultracompact source of the
original architecture is expected to have an enhanced global
182 Photon. Res. / Vol. 2, No. 6 / December 2014 Lin et al.
2327-9125/14/060182-04 © 2014 Chinese Laser Press
资源评论
weixin_38673812
- 粉丝: 4
- 资源: 904
最新资源
- 基于ARIMA-LSTM-transformer等模型进行流感时间序列预测Python源码（高分项目）
- 基于景观生态风险评价的流域景观格局优化，教学视频和资料，喜欢的就下载吧，保证受用
- java设计模式-建造者模式(Builder Pattern)
- C语言刷题-lesson5_1731564764305.pdf
- JavaScript开发指南PDG版最新版本
- JavaScript程序员参考(JavaScriptProgrammer'sReference)pdf文字版最新版本
- jQuery1.4参考指南的实例源代码实例代码最新版本
- CUMCM-2018-D.pdf
- jQueryapi技术文档chm含jQuery选择器使用最新版本
- DWIN_SET.rar
资源上传下载、课程学习等过程中有任何疑问或建议，欢迎提出宝贵意见哦~我们会及时处理！
点击此处反馈
