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我们通过运动方程的扩展方法研究了在近藤状态下弱耦合到Luttinger液体引线的强相关量子点的散粒噪声。 推导了具有良好收敛性的零频散粒噪声的一般公式。 对于弱的引线内相互作用,散粒噪声表现出对电压的非单调依赖性。 当相互作用非常弱时,在低电压下,在近藤温度附近存在一个峰,并且其高度随着引线内相互作用的增加而Swift降低。 当相互作用适度强时,峰值消失,散粒噪声随偏功率的幂律成比例变化,表明引线内电子相互作用抑制散粒噪声。 散粒噪声频谱的测量可能会提取出引线内相互作用的信息。
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Physics Letters A 378 (2014) 3136–3143
Contents lists available at ScienceDirect
Physics Letters A
www.elsevier.com/locate/pla
The shot noise of a strongly correlated quantum dot coupled to
the Luttinger liquid leads
Kai-Hua Yang
a,∗
, Xian He
a
, Huai-Yu Wang
b
, Kai-Di Liu
a
, Bei-Yun Liu
a
a
College of Applied Sciences, Beijing University of Technology, Beijing 100122, China
b
Department of Physics, Tsinghua University, Beijing 100084, China
a r t i c l e i n f o a b s t r a c t
Article history:
Received
11 June 2014
Received
in revised form 24 August 2014
Accepted
4 September 2014
Available
online 8 September 2014
Communicated
by R. Wu
Keywords:
Kondo
effect
Luttinger liquid
Shot
noise
We study the shot noise of a strongly correlated quantum dot weakly coupled to Luttinger liquid leads in
the Kondo regime by means of the extended equation of motion method. A general zero-frequency shot
noise formula with good convergence is derived. The shot noise exhibits a non-monotonic dependence
on voltage for weak intralead interaction. There is a peak around the Kondo temperature at low voltage
when the interaction is very weak, and its height decreases rapidly with the intralead interaction
increasing. When the interaction is moderately strong the peak disappears and the shot noise scales
as a power law in bias voltage, indicating that the intralead electron interaction suppresses the shot
noise. It is possible that the measurements of the shot noise spectrum can extract the information of the
intralead interaction.
© 2014 Elsevier B.V. All rights reserved.
1. Introduction
As techniques in fabricating devices of nanometer scale develop,
the research on shot noise has become a very active field in meso-
scope
physics [1–7]. The shot noise is caused by the discreteness of
charge carriers and is unavoidable even at zero temperature. It is
sensitive to the second-order correlations of the current and thus
provides additional information about conduction process. Shot-
noise
measurements have proven to be a valuable tool to investi-
gate
many-body effects in mesoscopic transport. For example, shot
noise experiments can determine the kinetics of electrons and re-
veal
information on the correlations of electronic wave function.
Therefore, it can provide some valuable information unavailable by
the usual conductance measurements [1].
A
number of experiments [2–7] tried to exploit the control-
lable
physical characteristics of a quantum dot (QD) in order to
acquire important information of Kondo systems unavailable from
bulk systems. The study of shot noise through strongly corre-
lated
QD devices in the Kondo regime has received increasing
attention [8–15]. These theoretical studies focused on the sys-
tems
with a QD coupled to the three-dimensional interacting elec-
tron
leads which could be described by Landau’s Fermi liquid (FL)
theory. However, one-dimensional electron systems, where inter-
actions
between electrons are of great importance in transport,
*
Corresponding author.
E-mail
address: khy@bjut.edu.cn (K.-H. Yang).
cannot be described by the FL model. No matter how weak the
fermion interactions are, they cannot be taken into account per-
turbatively
[16–19]. The low-energy properties of one-dimensional
metals have been investigated successfully within the framework
of the Luttinger liquid (LL) theory [16–19]. It is expected that in
such systems the shot noise will behave differently from those
with FL leads.
For
a classical conductor the zero-frequency shot noise S(0)
is characterized by the Poisson value S(0) = 2eI, where I is the
average current. In a mesoscopic conductor, the shot noise is in-
fluenced
by quantum statistics and interactions between charged
carriers. In the shot-noise measurements of single-wall-nanotubes
(SWNT), the power law dependence at low bias voltages was
found, which exhibited the LL behavior [20–22]. Researches deal-
ing
with the shot noise in LL systems have been few [23–33],
especially in the Kondo regime. For example, with the help of mas-
ter
equation approach, the shot noise in the sequential tunneling
regime was studied [27–29]. The idea of using the Bethe ansatz
to describe transport through a quantum impurity was pursued
in works [30,31] leading to the shot noise [30] and third cumu-
lants
of the current [31]. However, the properties of the shot noise
in the Kondo regime has not been touched in previous works, al-
though
the Kondo problems have been investigated in LL systems
[32,33]. This paper intends to do the theoretical work. The method
we use is the equation of motion (EOM) approach of the many-
body
Green’s function technique. The EOM treatment is a self-
consistent
procedure. The decoupling scheme used in determining
http://dx.doi.org/10.1016/j.physleta.2014.09.007
0375-9601/
© 2014 Elsevier B.V. All rights reserved.
K.-H. Yang et al. / Physics Letters A 378 (2014) 3136–3143 3137
the dot retarded Green function contains the same order of corre-
lations [34,35].
The
numerical results show that intralead electron interac-
tion
suppresses the shot noise. For weak intralead interaction, the
height of the peak around the Kondo temperature T
K
is decreased
by the intralead interaction, while the peak position remains al-
most
unchanged, which manifests the one-channel Kondo (1CK)
effect. This can help to obtain reliable estimate of the Kondo tem-
perature
by shot-noise measurements. With the increase of the
intralead interaction, the peak will disappear, indicating the tran-
sition
from the 1CK effect to two-channel Kondo (2CK) effect. In
the limit of the strong intralead interaction, the shot noise scales
as a power law in bias voltage. We also calculate the Fano factor
F = S/2eI, the ratio of the noise power spectral density S to the
full shot noise value. The intralead interaction enhances the Fano
factor, implying that the reduction rate of the current is greater
than that of its noise. This result also reveals that the Fano factor
can be controlled by tuning the LL parameters. In the high voltage
regime, the Fano factor manifests bias-voltage-dependent power-
law
scaling. The present work enriches the existing studies of the
noise in the strongly correlated Kondo regime. We believe that it
will be informative for future experimental effort.
The
structure of the paper is as the following. In Section 2,
we present the model Hamiltonian of the system. Then, a general
formula of the shot noise is derived by using the EOM method.
Numerical results are analyzed in Section 3. Section 4 gives our
summary.
2. Hamiltonian and formulation
2.1. Model Hamiltonian
The device under consideration consists of a QD coupled to two
semi-finite LL leads. Its Hamiltonian is
H = H
leads
+ H
D
+ H
T
. (1)
The first-term describes the left (L) and right (R) electrodes,
H
leads
= H
L
+ H
R
. To derive it we follow the procedure in Ref. [36].
First, we write down the kinetic energy of the electrons with open
boundary conditions. Then, the electron operators are bosonized.
An outline is presented in Appendix A. Finally, the lead Hamilto-
nian
can be written in the bosonized form [37] as:
H
α
=
¯
h
∞
0
k
v
cα
a
†
k
α
a
kα
+ v
sα
c
†
k
α
c
kα
dk (α = L, R), (2)
where the operator a
k,α
(c
k,α
) is an annihilation operator of bosons
describing charge (spin) density fluctuations propagating with ve-
locity
v
c(s)α
. In this paper, we set
¯
h = 1.
The
second-term H
D
in Eq. (1) describes the QD and has the
form
H
D
=
σ
ε
d
d
†
σ
d
σ
+ Ud
†
↑
d
↑
d
†
↓
d
↓
, (3)
where ε
d
denotes the discrete energy-levels of the QD which can
be tuned by a gate voltage, and U is the on-dot Coulomb inter-
action.
Whereas d
†
σ
(d
σ
) is the creation (annihilation) operator of
electrons with spin σ , and the corresponding occupation number
is n
σ
= d
†
σ
d
σ
. The third-term in Eq. (1) describes the tunneling
processes between the QD and electrodes with the tunneling ma-
trix
components t
α
:
H
T
=
ασ
t
α
d
†
σ
ψ
ασ
+H.c.
.
(4)
The operator ψ
α
at the boundary could be written in a bosonized
form [37]:
ψ
ασ
(t) =
2
πα
exp
∞
0
dke
−α
k/2
a
kα
e
−iω
cαk
t
−a
†
k
α
e
iω
cαk
t
√
2K
c
k
+σ
c
kα
e
−iω
sαk
t
−c
†
k
α
e
iω
sαk
t
√
2kK
s
,
(5)
where α
is a short-distance cutoff with the same order of magni-
tude
of the reciprocal of the Fermi wave number k
F
, ω
cαk
= v
cα
k
and
ω
sαk
= v
sα
k. The intralead electron interaction parameter for
the α lead is K
c
for the charge sector and K
s
for the spin sector.
Due to the repulsive electron–electron interactions, K
c
is less than
1 while K
s
is fixed as 1because of the SU(2) spin symmetry.
2.2. The shot noise formula
The cur rent operator flowing from the α lead to the QD can be
evaluated from the time evolution of the occupied number opera-
tor
of the lead as
I
ασ
=e
dN
ασ
dt
=
ie
t
α
d
†
σ
ψ
ασ
−
t
α
ψ
†
ασ
d
σ
=−
2e Re
t
α
G
<
dασ
(t, t)
, (6)
where G
<
dασ
(t, t
) = iψ
†
ασ
(t
)d
σ
(t) is the lesser Green’s function
(GF) b etween the dot and α lead. To calculate it we construct the
complex time GF,
G
dασ
τ , τ
=−
i
T
c
d
σ
(τ )ψ
†
ασ
τ
,
(7)
where T
c
is the contour time-ordering operator and τ and τ
are
complex times running along a complex contour. Then we find
G
dασ
(τ , τ
) =t
α
c
dτ
1
G
dσ
(τ , τ
1
)g
ασ
(τ
1
, τ
), where
G
dσ
(τ , τ
1
) =−i
T
c
d
σ
(τ )d
†
σ
(τ
1
)
H
(8)
is the full Green’s function of the QD, and
g
ασ
τ
1
, τ
=−
i
T
c
ψ
ασ
(τ
1
)ψ
†
ασ
τ
H
α
(9)
is the local GF at the end point of the isolated α lead. After using
Langreth theorem of analytic continuation [38,39], the lesser GF
appearing in Eq. (6) is expressed as
G
<
dασ
t, t
=
dt
1
G
r
d
σ
(t, t
1
)g
<
ασ
t
1
, t
+
G
<
dσ
(t, t
1
)g
a
ασ
t
1
, t
,
(10)
where the “retarded” and “lesser” GFs G
r,<
dσ
for the QD are de-
fined
as G
r
d
σ
≡ iθ(t − t
){d
σ
(t), d
†
σ
(t
)} and G
<
dσ
≡ id
†
σ
(t
)d
σ
(t).
Besides, in order to describe the nonequilibrium state of elec-
trons,
some other lesser GFs are also defined for later use,
such as G
<
αdσ
(t, t
) ≡ id
†
σ
(t
)ψ
ασ
(t), G
<
dασ
(t, t
) ≡ iψ
†
ασ
(t
)d
σ
(t),
G
<
αβσ
(t, t
) ≡ iψ
†
βσ
(t
)ψ
ασ
(t), (α, β = L, R), as well as their cor-
responding
greater, advanced, and retarded GFs, e.g., G
r
d
ασ
≡
iθ(t −t
){d
σ
(t), ψ
†
ασ
(t
)}.
The
Langreth theorem helps us to get
G
<
Ldσ
t, t
=
dt
1
t
L
g
<
Lσ
(t, t
1
)G
a
d
σ
t
1
, t
+
g
r
L
σ
(t, t
1
)G
<
dσ
t
1
, t
(11)
and
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