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Research on photodiode integrated with wide

spectrum focusing reflector using nonperiodic

subwavelength gratings

Tao Liu (刘涛), Yongqing Huang (黄永清)*, Jiarui Fei (费嘉瑞), Gang Wu (武刚),

Xiaokai Ma (马晓凯), Xiaofeng Duan (段晓峰), Kai Liu (刘凯), and Xiaomin Ren (任晓敏)

Institute of Information Photonics and Optical Communications,

Beijing University of Posts and Telecommunications, Beijing 100876, China

*Corresponding author: yqhuang@bupt.edu.cn

Received December 18, 2017; accepted March 16, 2018; posted online April 27, 2018

The fabrication and characterization of p-i-n photodiodes integrated with wide spectrum focusing reflectors us-

ing nonperiodic strip and concentric-circular subwavelength gratings are presented. The experimental results

show that the gratings can reflect and focus the incident light on the absorber of the photodiode, and thus

can simultaneously achieve high speed and high efficiency. For the gratings’ integrated photodiodes, the respon-

sivity is improved over a wide spectral range, and when the absorber was 600 nm and the mesa diameter was

40 μm, a responsivity of 0.46 A/W at a wavelength of 1.55 μm and a 3 dB bandwidth of 21.6 GHz under a reverse

bias of 3 V were simultaneously obtained.

OCIS codes: 130.3120, 230.5170, 250.0040.

doi: 10.3788/COL201816.051301.

Highspeed and high-efficiency p-i-n photodiodes (PDs) are

critical components for optical communication systems.

Typically, there is a trade-off between bandwidth and

quantum efficiency for a p-i-n PD. The two major

speed-limiting factors in p-i-n photodiodes that cause

the trade-off are the transit time and resistor-capacitor

(RC) time. The RC time limit can be alleviated either

by employing a smaller device area or by increasing the

depletion width, thereby decreasing the capacitance per

unit area. However, an increased depletion width conse-

quently increases the transit time. On the other hand, a

smaller device area and a thinner absorption layer will

reduce the efficiency of p-i-n PDs. To overcome this limi-

tation, the traditional structure of resonant cavity en-

hanced p-i-n PDs

[1–4]

has been proposed. This structure

can achieve a high speed, a high efficiency, and a narrow

spectral linewidth. In addition, a PD integrated with a

single bottom reflector such as a distributed Bragg

reflector

[5,6]

, periodic subwavelength gratings

[7]

, or metal

mirror

[8]

can obtain a high speed and high efficiency simul-

taneously because the effective absorption length of the

devices has doubled.

It is worth noting that the spot size becomes larger due

to scattering when the beam passes through the PD.

Therefore, a PD integrated with a focusing reflector means

that the coupling efficiency between the optical fiber and

the PD can be improved compared with the normal reflec-

tor integrated PD. It is known to all that conventional

focusing reflectors require an aspheric shape and bulky

thickness, presenting difficulties for standard microfabri-

cation techniques. Subwavelength gratings as reflectors

are easy monolithically fabricated with other optoelec-

tronic devices

[9–11]

. In addition, subwavelength gratings

as broadband high-reflectivity reflectors with focusing

abilities have been reported, such as nonperiodic strip sub-

wavelength gratings (S-SWGs)

[12]

and nonperiodic concen-

tric circular subwavelength gratings (CC-SWGs)

[13–15]

.In

this Letter, we present the S-SWGs and CC-SWGs inte-

grated with p-i-n PDs to simultaneously achieve a high

speed and high efficiency.

The cross-sectional view of the p-i-n PD integrated with

nonperiodic subwavelength gratings is shown in Fig.

1.It

can be seen from the figure that the p-i-n PD has a 600 nm

0.53

0.47

As absorption layer, a 300 nm heavily doped

p-type In

0.52

0.48

As electron barrier, a 100 nm heavily

doped In

0.53

0.47

As p-contact layer, a 600 nm heavily

doped InP n-contact layer, and a 350 μm InP substrate.

The metal electrodes are deposited on heavily doped

p- and n-contact layers to form a good ohmic contact.

The gratings consist of a 500 nm silicon bar layer, a

500 nm buried oxide layer, and a silicon substrate, which

Fig. 1. Cross-sectional view of a p-i-n photodiode integrated

with nonperiodic subwavelength gratings.

COL 16(5), 051301(2018) CHINESE OPTICS LETTERS May 10, 2018

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