In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room temperature. By programming the proper compliance current, bipolar resistive switching performances of TiN/MgZnO/ZnO/Pt devices were stabilized; the dispersion of switching voltages and resistance states of devices were suppressed simultaneously. In view of filamentary model, the elimination of secondary and multiple nanofilaments in higher compliance current was suggested to be responsible for the
