第
32
卷第
6
期
2009
年
12
月
电子器件
Vo
l.
32
No.6
De
c.2009
Chinese
Journal
αElectron
De
vi
出
S
Application of Charge Pumping Technology
on
High-Voltage
MOSFET
Reliability
Investigation
铃
YU
Yueyun
1.
2 ,
TANG
Yi
1
普
，
WAN
Xinggong
1
,
REN
Zheng
1
,
HU
Shaojian
1
,
ZHOUWei
1
,
LI
Xi
2
,
SHI
Yanling
2
c
川
ese
，
刷町
ear
，
盯
rch
a
ωd
川
D
问
e
阳叫叫回时
l
坤
o
咱
p
附
m
叫
n
刚
t
αω
伽伽
ω
nt
耐
úe
肌
e
叫
r
，
S
阳阳
ngh
阳川
a
2.
Ea
沁圳
st
α
i
阳
Normal
ui
协'n
i
巾
t
田
A
居
Je
rs
旷
ers
内
rSI
且
It
η
y
,
Shanghai
20
∞
0
∞
062
，
α
g
阳
na
Abstract:
The
application of charge pumping technology
on
High-Voltage(HV)
14 V
MOSFET
reliability
investigation is described. Device
after
HCI
stress
is analyzed
by
a developed asymmetric charge pumping
technology.
With
this
method
,
the
damage location and degree are found and
the
variation of interface
traps
caused by
HCI
are
quantified
Therefore
,
the
charge pumping technology can provide
important
information
for
the
device optimization
and
process improvement.
Key
words: charge
pumping(
CP)
; interface
trap
density, high-voltage(
HV)
;
transistors;
HCI
EEACC: 0170N ; 2570D
电荷泵技术在高压
Mω
晶体管可靠性研究中的应用祷
禹明均
1
，
2
唐逸
1\
万星拱
1
，任铮
1
，胡少坚
1
，周伟
l
，李曦
2
，石艳玲
2
G
上海集成电路研发中心，上海
20
川、
2.
华东师范大学，上海
200062
I
摘
要:主要阐述了电荷泵技术在
14
V
HV
MOS
晶体管可靠性研究中的应用。使用了一种改进的电荷泵技术分析了经过
热载流子加压后的器件特性。使用这种方法，我们可以精确描述器件损伤的位置和程度，以及可以精确评估由于
HCI
效应引
起的界面缺陷的变化，为器件优化与工艺改进提供重要参考信息。
关键词:电荷泵;界面缺陷密度;高压
MOS;
热载流子注入
中固分类号
:TN432
文献标识码:
文章编号
:1005-9490(2009)06-1023
-0
4
In
recent years, High-Voltage (
HV)
tra
p.-
sistors(V
DD
>10
V)
have been widely used in driv-
er circuits
such
as liquid-crystal display ICs
[1].
However, hot-carrier injection (
HCI)
degradation
has become a reliability concerned for
HV
MOS-
FETs.
HCI
phenomena in
MOSFETs
are more
and
more serious because of
MOSFETs'
scaling
down
without decrease of
their
voltage.
HCI
can induce a
lot of
traps
in
the
gate
oxide layer and
at
the
Si-
收稿日期:
2009-08-01
修改日期:
2009-08-13
Si0
2
interface.
It
is one of
the
major inducements of
device degradatio
n.
50
how
to
quantify
the
interface
trap
density accurately
and
how
to
describe
the
spatial distribution need
to
be deeply investigated.
It
is beneficial
to
understand
the
HV
transistors'
HCI
degradation mechanis
m.
Charge
pumping(CP)
technology has advanta-
ges over
other
interface
trap
density measurements
because
it
can evaluate
the
MOSFET
degradation
项目来源:
This
work
was
supported
by
Foundation
of
Sha
nghai
Sc
ience
&.
Technology
Co
rnmittee
Grants
075007033
and
08706200802.
上海市科委启明星项目资助
(07~B14018
，
08706200802)
作者简介:禹现陶
0984-)
，女，华东师范大学硕士研究生，微电子学与固体电子学，主要从事器件可靠性建模的研究
F
石艳玲
0969-)
，女，华东师范大学教授，微电子学与固体电子学，现主要从事
VLSI
工艺技术以及器件可靠性建模
的研究。
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