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High-performance fiber-integrated multifunctional

graphene-optoelectronic device with

photoelectric detection and optic-phase

modulation

LINQING ZHUO,

PENGPENG FAN,

SHUANG ZHANG,

YUANSONG ZHAN,

YANMEI LIN,

YU ZHANG,

DONGQUAN LI,

ZHEN CHE,

WENGUO ZHU,

3,5

HUADAN ZHENG,

JIEYUAN TANG,

JUN ZHANG,

YONGCHUN ZHONG,

WENXIAO FANG,

GUOGUANG LU,

JIANHUI YU,

* AND ZHE CHEN

2,3

Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,

Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China

Engineering Research Center on Visible Light Communication of Guangdong Province, Department of Optoelectronic Engineering,

Jinan University, Guangzhou 510632, China

Key Laboratory of Visible Light Communications of Guangzhou, Jinan University, Guangzhou 510632, China

Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability

and Environmental Testing Research Institute, Guangzhou 510610, China

e-mail: zhuwg88@163.com

*Corresponding author: jianhuiyu@jnu.edu.cn

Received 7 July 2020; revised 4 October 2020; accepted 5 October 2020; posted 13 October 2020 (Doc. ID 402108); published 30 November 2020

In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene

leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage

for the phase modulator. Here, an integration of the monolayer graphene onto the side-polished optical fiber is

demonstrated, which is capable of providing a cost-effective strategy to enhance the light–graphene interaction,

allowing us to obtain a highly efficient optical absorption in graphene and achieve multifunctions: photodetection

and optical phase modulation. As a photodetector, the device has ultrahigh responsivity (1.5 × 10

A∕W) and

high external quantum efficiency (>1.2 × 10

%). Additionally, the polybutadiene/polymethyl methacrylate

(PMMA) film on the graphene can render the device an optical phase modulator through the large thermo-optic

effect of the PMMA. As a phase modulator, the device has a relatively low half-wave voltage of 3 V with a 16 dB

extinction ratio in Mach–Zehnder interferometer configuration.

https://doi.org/10.1364/PRJ.402108

1. INTRODUCTION

Nowadays, optoelectronic devices are moving towards minia-

turization and integration. On-chip optical interconnects, espe-

cially silicon photonics, provide a promising platform for

miniaturized optoelectronic integration [1]. However, it is usu-

ally required to couple the silicon photonic devices with optical

fibers for the photonic signal transmission. The mode-

mismatch and the large index difference between the silicon

waveguide (width ∼0.5 μm, 3.42) and single-mod e fiber (core

diameter ∼8 μm, 1.463) lead to a relatively high coupling loss

[2]. The incompatibility of material characteristics and process-

ing technology of silicon and optical fiber requires long

assembly time and high cost to achieve accurate coupling

[3]. The integration of an optoelectronic device onto

optical fiber is potentially expected to solve the issue of incom-

patibility between chip and optical fiber. The fiber-integrated

optoelectronic devices, such as an fiber end face-integrated

photodetector based on CsPbBr

-graphene [4], an electro-optic

modulator by growing graphene on photonic crystal fiber (PCF)

[5], and all-optical modulator based on graphene-clad microfiber

[6], are compatible with current fiber-optic networks. However,

the microfiber suffers from poor mechanical properties; the

grown of graphene–PCF needs precise control and it is difficult

to fabricate electrodes on the curved fiber surface. The side-

polished fiber (SPF), usually polished by a single-mode fiber,

has the natural advantage of seamless connecting with the cur-

rent optical fiber system, has reliable mechanical properties, and

the polished surface provides a flat platform for device integra-

tion. The strength of evanescent field interaction with matter is

determined by the distance from the polished surface to the fiber

core [7], and the long side-polished region (>5mm) helps to

strengthen the light–matter interaction.

Research Article

Vol. 8, No. 12 / December 2020 / Photonics Research 1949

It is a ver y challenging task to integrate multifunctions into

one device because different functions are generall y based on

different mechanisms, materials, and structures [8].

However, the emergence of two-dimensional (2D) materials

sheds substantial light on multifunctional devices [9–12]. In

2016, an optoelectronic device based on vertical MoS

∕Si het-

erojunction was fabricated with the functionalities of both pho-

todetection and light emission [9]. The photodetection and

programmable charge storage have been integrated into a gra-

phene-MoS

hybrid device [10]. The graphene-based silicon

waveguide can be used for both optical modulation and photo-

detection [11]. But there is little research on integrating multi-

functions in an optical fiber. Our group has demonstrated a

graphene multifunctional device with electro-optical modula-

tion and photodetection based on coreless side-polished fiber

(CSPF), which, however, suffers from low photoresponsivity

and specific modulation wavelength [12]. What is more, the

electrodes of the device are not integrated onto the fiber but

onto the glass substrate, so it is not really an all-fiber device.

Photodetectors and modulators are indispensable devices in

photonic systems [13]. The commercial photodetectors are

generally based on semiconductors such as Si, Ge, and

InGaAs, and the phase modulators are generally based on a

LiNbO

crystal. Restricted by the incompatible material char-

acteristics and processing technology of semiconductor and

crystal, to date, there is no device that can integrate a photo-

detector and phase modulator into one device. The “half-wave”

voltage V

can be used to describe the modulation capacity of

an electro-optic phase modulator that makes ΔΦ  π [14],

and the V

is 3–5 V in commercial devices [15]. With the de-

velopment of 2D materials, electro-optic graphene-based phase

modulators have been proved to be effective in silicon wave-

guides, but they suffer from large optical losses

(>12 dB∕cm )[16–19]. Therefore, integration of graphene

with SPF is expected to achieve low transmission loss

phase modulators and high-performance photodetectors.

Implementing a high-performance multifunction device can

make the integrated optical system adaptable and meet the

needs of the coming fifth-generation (5G) era.

Graphene, due to its excellent optical and electronic prop er-

ties, holds great prospects for broadband and ultrafast optoelec-

tronic devices, and its flexibility makes all-fiber integration

possible. Different kinds of graphene-based optoelectronic de-

vices have been demonstrated, ranging from optical polarizer

[20], modulator [ 21,22], and switch [23], to photodetector

[24,25]. However, pure monolayer graphene photodetectors

suffer from low photorespon sivity, while the photoresponsi vity

does not exceed 32 A/W [ 12,24,26– 32]. The two major restric-

tions for the low photoresponsivity are the low optical absorp-

tion (≈2.3%) and short photocarrier lifetime of monolayer

graphene [23,33]. Significantly improving the responsivity of

pure graphene photodetectors is a prerequisite for their wide-

spread application [34]. Some attempts have been adopted to

improve the photoresponsivity of the graphene photodetector,

including modifying graphene with quantum dots [35,36], mi-

crocavities [37 ], and surface plasmons [38–40]. Although these

attempts can improve responsiveness, the introduction of quan-

tum dots will prolong the response time, the microcavity will

restrict the wavelength bandwidth, and surface plasmons will

increase absorption loss. Hence, developing pure graphene

photodetectors has the potential to achieve a broadband and

high-speed detection, and the top priority is to find a way

to achieve high responsivity.

In this paper, we demonstrate a multifunctional device that

can work at room temperature by integrating a hybrid

graphene/polybutadiene (PB)/polymethyl methacrylate

(PMMA) film onto an SPF. There is no need to dope graphene

and compound other materials; the extra-long side-polished re-

gion and the high refractive index PMMA work together to

enhance the light and graphene interaction, resulting in ultra-

high responsivity over a broadband range of 980 to 1610 nm in

a low cost and efficient way. At 1550 nm, the all-fiber graphene

device (AFGD) possesses a responsivity of 1.5 × 10

A∕W and

a response time of ∼93 ms, although the carrier mobility of

graphene we used is just 422.4cm

· V

−1

· s

−1

. The influence

of residual thickness of the SPF is investigated in detail. With

the assistance of the thermo-optic effect of PMMA, the AFGD

can work as an optical phase modulator. Based on the Mach–

Zehnder interferometer (MZI) configuration, a maximum

phase shift of 3π is obtained at a bias voltage of 6 V with

an extinction ratio up to 16 dB; the half-wave voltage V

3 V. What is more, in order to improve the air stability of gra-

phene, we added the PB layer to protect graphene against water

and impurity. This simple, high-performance, and easy-to-in-

tegrate multifunction device provides a reliable way to realize

photon transport, detection, and phase modulation in a single

optical fiber.

2. RESULTS AND DISCUSSION

A. Fabrication

The structure of the AFGD is shown in Fig. 1(a). The whole

device is integrated onto the side-polished region of the SPF. By

wheel side-polishing technique, a single-mode fiber (SMF-28e)

is polished into an SPF with a D-shaped cross section by re-

moving part of the optical fiber [41]. The single-mode fiber

has a core diameter of 8 μm and a cladding diameter of

125 μm. In order to protect graphene and improve the stability

of AFGD, we spin-coat a thin PB layer on chemical vapor de-

posited (CVD)-grown graphene before coating the PMMA

film. The nonpolar PB layer effectively pre vents Fermi-level

change in the graphene [42] and reduces the charged impurity

scattering from a polar adjacent layer or the residue of PMMA

small molecules [43]. After etching Cu foil, a narrow strip of

hybrid graphene/PB/PMMA film is wet-transferred onto the

side-polished region of the SPF. Before that, we prepare a

50 nm Au film by physical vapor deposition on the SPF

and scrape a gap of ∼25 μm in the middle of the Au film with

a needle to expose the fiber core. Thus, the fiber mode can leak

out and interact with the graphene/PB/PMMA film. The as-

fabricated Au microstrip electrodes (length ∼6mm, width

∼50 μm) are placed on the side-polished region. Figure 1(b)

shows the AFM image of hybrid graphene/PB/PMMA film,

indicating that the thickness of the hybrid film is

∼245.2nm. The AFM image of graphene/PMMA film with-

out PB is shown by Fig. 9 in Appendix A, from which one can

1950 Vol. 8, No. 12 / December 2020 / Photonics Research

Research Article

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