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High-performance fiber-integrated multifunctional graphene-optoe...
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In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase modulator. Here, an integration of the monolayer graphene onto the side-polished optical fiber is demonstrated, which is capable of providing a cost-effective strategy to enhance the light–graphene interaction, allowing us to obtain a highly efficient optical absorpt
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High-performance fiber-integrated multifunctional
graphene-optoelectronic device with
photoelectric detection and optic-phase
modulation
LINQING ZHUO,
1
PENGPENG FAN,
1
SHUANG ZHANG,
1
YUANSONG ZHAN,
2
YANMEI LIN,
1
YU ZHANG,
1
DONGQUAN LI,
2
ZHEN CHE,
1
WENGUO ZHU,
3,5
HUADAN ZHENG,
2
JIEYUAN TANG,
2
JUN ZHANG,
1
YONGCHUN ZHONG,
3
WENXIAO FANG,
4
GUOGUANG LU,
4
JIANHUI YU,
1,
* AND ZHE CHEN
2,3
1
Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,
Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
2
Engineering Research Center on Visible Light Communication of Guangdong Province, Department of Optoelectronic Engineering,
Jinan University, Guangzhou 510632, China
3
Key Laboratory of Visible Light Communications of Guangzhou, Jinan University, Guangzhou 510632, China
4
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability
and Environmental Testing Research Institute, Guangzhou 510610, China
5
e-mail: zhuwg88@163.com
*Corresponding author: jianhuiyu@jnu.edu.cn
Received 7 July 2020; revised 4 October 2020; accepted 5 October 2020; posted 13 October 2020 (Doc. ID 402108); published 30 November 2020
In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene
leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage
for the phase modulator. Here, an integration of the monolayer graphene onto the side-polished optical fiber is
demonstrated, which is capable of providing a cost-effective strategy to enhance the light–graphene interaction,
allowing us to obtain a highly efficient optical absorption in graphene and achieve multifunctions: photodetection
and optical phase modulation. As a photodetector, the device has ultrahigh responsivity (1.5 × 10
7
A∕W) and
high external quantum efficiency (>1.2 × 10
9
%). Additionally, the polybutadiene/polymethyl methacrylate
(PMMA) film on the graphene can render the device an optical phase modulator through the large thermo-optic
effect of the PMMA. As a phase modulator, the device has a relatively low half-wave voltage of 3 V with a 16 dB
extinction ratio in Mach–Zehnder interferometer configuration.
© 2020 Chinese Laser Press
https://doi.org/10.1364/PRJ.402108
1. INTRODUCTION
Nowadays, optoelectronic devices are moving towards minia-
turization and integration. On-chip optical interconnects, espe-
cially silicon photonics, provide a promising platform for
miniaturized optoelectronic integration [1]. However, it is usu-
ally required to couple the silicon photonic devices with optical
fibers for the photonic signal transmission. The mode-
mismatch and the large index difference between the silicon
waveguide (width ∼0.5 μm, 3.42) and single-mod e fiber (core
diameter ∼8 μm, 1.463) lead to a relatively high coupling loss
[2]. The incompatibility of material characteristics and process-
ing technology of silicon and optical fiber requires long
assembly time and high cost to achieve accurate coupling
[3]. The integration of an optoelectronic device onto
optical fiber is potentially expected to solve the issue of incom-
patibility between chip and optical fiber. The fiber-integrated
optoelectronic devices, such as an fiber end face-integrated
photodetector based on CsPbBr
3
-graphene [4], an electro-optic
modulator by growing graphene on photonic crystal fiber (PCF)
[5], and all-optical modulator based on graphene-clad microfiber
[6], are compatible with current fiber-optic networks. However,
the microfiber suffers from poor mechanical properties; the
grown of graphene–PCF needs precise control and it is difficult
to fabricate electrodes on the curved fiber surface. The side-
polished fiber (SPF), usually polished by a single-mode fiber,
has the natural advantage of seamless connecting with the cur-
rent optical fiber system, has reliable mechanical properties, and
the polished surface provides a flat platform for device integra-
tion. The strength of evanescent field interaction with matter is
determined by the distance from the polished surface to the fiber
core [7], and the long side-polished region (>5mm) helps to
strengthen the light–matter interaction.
Research Article
Vol. 8, No. 12 / December 2020 / Photonics Research 1949
2327-9125/20/121949-09 Journal © 2020 Chinese Laser Press
It is a ver y challenging task to integrate multifunctions into
one device because different functions are generall y based on
different mechanisms, materials, and structures [8].
However, the emergence of two-dimensional (2D) materials
sheds substantial light on multifunctional devices [9–12]. In
2016, an optoelectronic device based on vertical MoS
2
∕Si het-
erojunction was fabricated with the functionalities of both pho-
todetection and light emission [9]. The photodetection and
programmable charge storage have been integrated into a gra-
phene-MoS
2
hybrid device [10]. The graphene-based silicon
waveguide can be used for both optical modulation and photo-
detection [11]. But there is little research on integrating multi-
functions in an optical fiber. Our group has demonstrated a
graphene multifunctional device with electro-optical modula-
tion and photodetection based on coreless side-polished fiber
(CSPF), which, however, suffers from low photoresponsivity
and specific modulation wavelength [12]. What is more, the
electrodes of the device are not integrated onto the fiber but
onto the glass substrate, so it is not really an all-fiber device.
Photodetectors and modulators are indispensable devices in
photonic systems [13]. The commercial photodetectors are
generally based on semiconductors such as Si, Ge, and
InGaAs, and the phase modulators are generally based on a
LiNbO
3
crystal. Restricted by the incompatible material char-
acteristics and processing technology of semiconductor and
crystal, to date, there is no device that can integrate a photo-
detector and phase modulator into one device. The “half-wave”
voltage V
π
can be used to describe the modulation capacity of
an electro-optic phase modulator that makes ΔΦ π [14],
and the V
π
is 3–5 V in commercial devices [15]. With the de-
velopment of 2D materials, electro-optic graphene-based phase
modulators have been proved to be effective in silicon wave-
guides, but they suffer from large optical losses
(>12 dB∕cm )[16–19]. Therefore, integration of graphene
with SPF is expected to achieve low transmission loss
phase modulators and high-performance photodetectors.
Implementing a high-performance multifunction device can
make the integrated optical system adaptable and meet the
needs of the coming fifth-generation (5G) era.
Graphene, due to its excellent optical and electronic prop er-
ties, holds great prospects for broadband and ultrafast optoelec-
tronic devices, and its flexibility makes all-fiber integration
possible. Different kinds of graphene-based optoelectronic de-
vices have been demonstrated, ranging from optical polarizer
[20], modulator [ 21,22], and switch [23], to photodetector
[24,25]. However, pure monolayer graphene photodetectors
suffer from low photorespon sivity, while the photoresponsi vity
does not exceed 32 A/W [ 12,24,26– 32]. The two major restric-
tions for the low photoresponsivity are the low optical absorp-
tion (≈2.3%) and short photocarrier lifetime of monolayer
graphene [23,33]. Significantly improving the responsivity of
pure graphene photodetectors is a prerequisite for their wide-
spread application [34]. Some attempts have been adopted to
improve the photoresponsivity of the graphene photodetector,
including modifying graphene with quantum dots [35,36], mi-
crocavities [37 ], and surface plasmons [38–40]. Although these
attempts can improve responsiveness, the introduction of quan-
tum dots will prolong the response time, the microcavity will
restrict the wavelength bandwidth, and surface plasmons will
increase absorption loss. Hence, developing pure graphene
photodetectors has the potential to achieve a broadband and
high-speed detection, and the top priority is to find a way
to achieve high responsivity.
In this paper, we demonstrate a multifunctional device that
can work at room temperature by integrating a hybrid
graphene/polybutadiene (PB)/polymethyl methacrylate
(PMMA) film onto an SPF. There is no need to dope graphene
and compound other materials; the extra-long side-polished re-
gion and the high refractive index PMMA work together to
enhance the light and graphene interaction, resulting in ultra-
high responsivity over a broadband range of 980 to 1610 nm in
a low cost and efficient way. At 1550 nm, the all-fiber graphene
device (AFGD) possesses a responsivity of 1.5 × 10
7
A∕W and
a response time of ∼93 ms, although the carrier mobility of
graphene we used is just 422.4cm
2
· V
−1
· s
−1
. The influence
of residual thickness of the SPF is investigated in detail. With
the assistance of the thermo-optic effect of PMMA, the AFGD
can work as an optical phase modulator. Based on the Mach–
Zehnder interferometer (MZI) configuration, a maximum
phase shift of 3π is obtained at a bias voltage of 6 V with
an extinction ratio up to 16 dB; the half-wave voltage V
π
is
3 V. What is more, in order to improve the air stability of gra-
phene, we added the PB layer to protect graphene against water
and impurity. This simple, high-performance, and easy-to-in-
tegrate multifunction device provides a reliable way to realize
photon transport, detection, and phase modulation in a single
optical fiber.
2. RESULTS AND DISCUSSION
A. Fabrication
The structure of the AFGD is shown in Fig. 1(a). The whole
device is integrated onto the side-polished region of the SPF. By
wheel side-polishing technique, a single-mode fiber (SMF-28e)
is polished into an SPF with a D-shaped cross section by re-
moving part of the optical fiber [41]. The single-mode fiber
has a core diameter of 8 μm and a cladding diameter of
125 μm. In order to protect graphene and improve the stability
of AFGD, we spin-coat a thin PB layer on chemical vapor de-
posited (CVD)-grown graphene before coating the PMMA
film. The nonpolar PB layer effectively pre vents Fermi-level
change in the graphene [42] and reduces the charged impurity
scattering from a polar adjacent layer or the residue of PMMA
small molecules [43]. After etching Cu foil, a narrow strip of
hybrid graphene/PB/PMMA film is wet-transferred onto the
side-polished region of the SPF. Before that, we prepare a
50 nm Au film by physical vapor deposition on the SPF
and scrape a gap of ∼25 μm in the middle of the Au film with
a needle to expose the fiber core. Thus, the fiber mode can leak
out and interact with the graphene/PB/PMMA film. The as-
fabricated Au microstrip electrodes (length ∼6mm, width
∼50 μm) are placed on the side-polished region. Figure 1(b)
shows the AFM image of hybrid graphene/PB/PMMA film,
indicating that the thickness of the hybrid film is
∼245.2nm. The AFM image of graphene/PMMA film with-
out PB is shown by Fig. 9 in Appendix A, from which one can
1950 Vol. 8, No. 12 / December 2020 / Photonics Research
Research Article
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