在室温下通过铁磁体/有机-无机杂化钙钛矿界面的自旋极化电子传输资源-CSDN文库

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这篇文章探讨了在室温下通过铁磁体和有机-无机杂化钙钛矿界面的自旋极化电子传输现象。文章的主要知识点涵盖了有机-无机杂化钙钛矿材料(OIHPs)在自旋电子学领域中的应用潜力，自旋极化电子在钙钛矿基自旋电子设备中的传输机制，以及铁磁体/钙钛矿界面的作用。以下是对该领域深入解析： 1. 有机-无机杂化钙钛矿材料(OIHPs)：OIHPs是指在钙钛矿结构中，有机分子和无机离子相结合的材料。这类材料因其独特的光电特性，如优异的光吸收和载流子迁移率，在光电子领域受到广泛关注。它们被认为是构建下一代光电转换设备，如太阳能电池、发光二极管(LED)和激光器的重要候选材料。 2. 自旋电子学(Spintronics)：自旋电子学是一门研究电子的自旋状态及其对电子输运性质影响的科学。与传统的电子学只关注电子的电荷性质不同，自旋电子学同时考虑电子的电荷和自旋，以此实现更高密度的存储、更快的计算速度和更低的能量消耗。 3. 自旋极化电子传输：在自旋电子学中，自旋极化电子传输指的是电子的自旋方向被有序排列并沿着某个方向传输的过程。室温下实现有效的自旋极化电子传输对于自旋电子学应用的商业化至关重要，因为它涉及到能耗、信号的稳定性和操作温度等实际应用因素。 4. 铁磁体/钙钛矿界面：在自旋电子学中，铁磁体与半导体界面的作用至关重要。界面可以影响电子的注入、自旋极化和传输特性。研究中铁磁体与有机-无机杂化钙钛矿界面的相互作用，旨在揭示界面处自旋极化电子的行为，并探索其在室温下自旋传输的潜力。 5. 垂直钙钛矿自旋阀(PeSV)：文章中提到了使用镍(Ni)作为铁磁电极和钙钛矿材料CH3NH3PbI3−xClx构建的垂直钙钛矿自旋阀结构。PeSV是指在自旋电子学中，由自旋极化电极和非磁性材料层构成的自旋注入和检测设备。这种结构能够展示出磁电阻效应，并用于研究自旋极化电子的传输性质。 6. 面内各向异性磁阻(AMR)和自旋阀相关磁阻(MR)：AMR是指材料电阻率随磁场方向变化的物理现象。研究中通过AMR和MR展示了显著的磁性开关行为，这表明自旋极化电子的传输受到了界面形成的调控。界面两侧的自旋量子化轴的铁磁耦合是导致这种现象的关键因素。 7. 自旋积累的检测：文章还利用了电容-频率(C-f)测量在磁场下检测Ni/CH3NH3PbI3−xClx界面处的自旋积累现象。通过测量不同自旋配置下的变化，证实了界面处自旋积累的存在。 8. 自旋敏感电子顺磁共振(EPR)：利用自旋敏感电子顺磁共振技术，可以检测到界面处磁矩(μ)的显著变化。通过这种现象，可以进一步理解自旋极化电子在界面处的传输机制。总结来说，这项工作强调了铁磁体/有机-无机杂化钙钛矿界面在室温下自旋极化电子传输中的作用，并指出了该界面在未来的杂化光自旋电子学应用中可能扮演的关键角色。这项研究不仅加深了我们对钙钛矿基自旋电子设备的理解，还为未来开发室温自旋电子学器件提供了重要指导。

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www.advmatinterfaces.de

COMMUNICATION

1900718 (1 of 7)

2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Spin-Polarized Electronic Transport through Ferromagnet/

Organic–Inorganic Hybrid Perovskite Spinterfaces at Room

Temperature

Kai Wang,* Qin Yang, Jiashun Duan, Caixia Zhang, Fenggui Zhao, Haomiao Yu,

and Bin Hu*

DOI: 10.1002/admi.201900718

Organic–inorganic hybrid perovskites

(OIHPs) have gained unprecedented

attention due to their high power con-

version efﬁciencies (PCE) for solar

cell applications.

[1–3]

The prototypical

halide perovskite semiconductor meth-

ylammonium lead iodide chloride

(CH

PbI

3−x

) is by far one of the

most successful photovoltaic candidates

for achieving championed PCE because of

its direct–indirect bandgap with optimal

gap energy (≈1.5 eV), low binding energy

for efﬁcient exciton dissociation, high

absorption coefﬁcient within the wide

solar spectrum, and long electronic charge

transport distance (≈1−10 μm).

[4–7]

fact, its octahedral crystalline framework

together with the randomly oriented and

caged organic constituent (i.e., CH

)

is expected to offer semiconducting, fer-

roelectric, and even spin-related charac-

teristics simultaneously.

[8–11]

Nevertheless,

a large number of studies have focused at

the semiconducting properties associated

optoelectronic phenomena by overviewing

the presently afﬁliated research, and are

concerned with the electronic charge

transport behavior, mainly in solar cells and light-emitting

devices (LEDs).

[12]

It remains challenging and intriguing to con-

sider using spin-polarized electrons as information carriers/

bits for data transmission and processing in order to exten-

sively explore novel and multifunctional properties in OIHPs

based optospintronic devices.

[13,14]

As we know, the organic–inorganic halide perovskite such

as CH

PbI

3−x

contains the heavy elements such as lead

(Pb) and iodine (I). Both elements are expected to offer rela-

tively large spin–orbit coupling (SOC) effect and contribute to

the nondegenerated energy band splitting.

[7,15–17]

Theoretically,

the effect has been predicted to speed up hot electron and hole

relaxations while allowing a rapid transition to long-lived triplet

states. As a result, it helps to extend charge carrier lifetime.

[18]

In spintronics, SOC may give rise to the spin dephase for spin

injection and transport. On the other hand, the intrinsic physical

properties such as high carrier concentration and mobility for

PbI

3−x

may make the spin injection more efﬁcient

by the electrical means via a ferromagnet and avert conductivity

Organic–inorganic hybrid perovskites (OIHPs) have been explosively

investigated mainly due to their potential applications in optoelectronics.

Despite the electronic charge transport, phenomena regarding the spin-

polarized electronic transport in OIHPs-based spintronic devices and

the role of ferromagnet/OIHP spinterfaces remain unclear. In this work,

the spin injection, accumulation, transport, and detection at room tem-

perature for a vertical perovskite spin valve (PeSV) consisting of Ni/

PbI

3−x

/Ni is reported. An in-plane anisotropic magnetoresist-

ance (AMR) and a PeSV related magnetoresistance (MR) show remarkable

magnetic switching behaviors due to the formation of Ni/CH

PbI

3−x

spinterfaces, and the ferromagnetic coupling between two spin quantiza-

tion axes of the spinterfaces. With assists of capacitance–frequency (C − − f )

measurements under magnetic ﬁelds, the spin accumulation that occurs at

the Ni/CH

PbI

3−x

interface can be detected at the spin parallel (↑↑)

and antiparallel (↑↓) conﬁgurations. Owing to a strong orbital interaction

at the Ni/CH

PbI

3−x

hybrid interface, the spin-sensitive electron par-

amagnetic spectroscopy (EPR) reveals signiﬁcant change of the magnetic

moment (

). It is believed that the solution processed CH

PbI

3−x

and the formation of the Ni/CH

PbI

3−x

spinterface may hold an

exceptionally important role for future hybrid optospintronic applications.

Dr. K. Wang, Q. Yang, C. Zhang, F. Zhao, Dr. H. Yu, Prof. B. Hu

Key Laboratory of Luminescence and Optical Information

Ministry of Education

School of Science

Beijing Jiaotong University

Beijing 100044, China

E-mail: kaiwang@bjtu.edu.cn; bhu@utk.edu

J. Duan

Wuhan National Laboratory for Optoelectronics

Huazhong University of Science and Technology

Wuhan 430074, China

Prof. B. Hu

Department of Materials Science and Engineering

University of Tennessee

Knoxville, TN 37996, USA

The ORCID identiﬁcation number(s) for the author(s) of this article

can be found under https://doi.org/10.1002/admi.201900718.

Hybrid Perovskite Spinterfaces

Adv. Mater. Interfaces 2019, 1900718

www.advancedsciencenews.com

2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

1900718 (2 of 7)

www.advmatinterfaces.de

mismatch problem.

[19]

In addition, the unique electronic struc-

ture of CH

PbI

3−x

was demonstrated to exhibit Rashba–

Dresselhaus SOC due to the lack of structural inversion sym-

metry, causing signiﬁcantly spin-dependent band splitting even

in the absence of magnetic ﬁeld.

[9,10,17,20,21]

The effect was pre-

dicted to suppress effective masses for the electron and hole;

as a consequence, the electronic charge or spin gains a high

speed.

[10,22]

Furthermore, it has been observed that the surface of

nonmagnetic CH

PbI

3−x

can interact with ferromagnetic

Co, leading to an electric–magnetic coupling phenomenon.

[23]

As a consequence, spin-dependent interfacial density of states

(DOS) are formed due to orbital overlaps. A spin valve based

LED was demonstrated for MAPbBr

with circularly polarized

electroluminescence at low temperatures (10 K).

[12]

More impor-

tantly, the spin lifetime (

) of ≈936 ps was extracted by the

Hanle method from the same device. The success on such cir-

cularly polarized electroluminescence has opened a new avenue

toward controlling light emission through spin states. The

spin–lattice relaxation time of the polycrystalline CH

PbI

thin ﬁlm was also measured through the circular pump-probe

laser spectroscopy showing its potential applications in ultra-

fast spin switches.

[24]

Moreover, a large optical Stark effect and a

quantum-conﬁned Stark effect were demonstrated in lead halide

perovskites and layered perovskites respectively.

[25,26]

In this work, we have explored the formation of Ni/

PbI

3−x

spinterfaces in order to understand the

spin-polarized electronic transport and spin valve (SV) based

magnetoresistance (MR) at room temperature. A large-area perov-

skite spin valve (PeSV) consisting of Ni/CH

PbI

3−x

/Ni

cross-bar structure was fabricated. Spin injection and detection

were carried out at room temperature. From magnetotransport

measurements, some remarkable changes of the anisotropic

magnetoresistance (AMR) have been observed for the poly-

crystalline CH

PbI

3−x

ﬁlm and Ni spinterfaces by com-

paring with AMR of the pristine polycrystalline Ni thin ﬁlm. At

ambient condition, a pronounced PeSV related MR effect was

detected by the magnetic coupling between the spin quantiza-

tion axes of the two spinterfaces. The capacitance–frequency

(C–f) spectroscopic method was adopted to verify spin accumu-

lation at the Ni/CH

PbI

3−x

hybrid interface. The electron

paramagnetic resonance (EPR) spectroscopy was used for exten-

sively identifying the formation of such spinterfaces based on

the change of magnetic moment (

) at room temperature.

Figure 1a shows the UV–vis absorption and steady-state photo-

luminescence (PL) spectra at room temperature, which depict

the optical properties of the polycrystalline CH

PbI

3−x

ﬁlm. The onset of the absorption spectrum coincides with the

peak value of the PL peak at 768 nm elucidating the typically

optical characteristic of CH

PbI

3−x

[27]

The time-resolved

photoluminescence measurement shows the electron–hole

lifetime of ≈180 ns in Figure 1b, indicating the low density of

defects.

[28]

Figure 1c illustrates the surface morphology of the

350 nm thick CH

PbI

3−x

ﬁlm with distinct crystalline

grains. The photovoltaic performance based on the solar cell

structure ITO (glass)/PEDOT:PSS (40 nm)/CH

PbI

3−x

(350 nm)/PCBM (30 nm)/PEI (10 nm)/Ag (100 nm) was also

measured. As it is provided in Figure 1d, the optimal PCE

reaches 15.4% with V

= 1.07 V, J

= 19.4 mA cm

−2

, and

Adv. Mater. Interfaces 2019, 1900718

Figure 1. Some basic material and device characterizations. a) UV–vis absorption and steady-state PL spectra. b) A time-resolved PL spectrum.

c) A scanning electron microscopic (SEM) image of 350 nm thick CH

PbI

1−x

polycrystalline ﬁlm. d) Photovoltaic response of a solar cell com-

prising indium tin oxide (ITO) (glass)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) (40 nm)/CH

PbI

3−x

(350 nm)/[6,6 ]-

phenyl-C61-butyric acid methyl ester (PCBM) (30 nm)/poly(ethyleneimine) (PEI) (10 nm)/Ag (100 nm); V

, J

, FF, and PCE stand for the open-circuit

voltage, short-circuit current, ﬁlled factor, and power conversion efﬁciency respectively.

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