IRF540-数据手册1
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1/8February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
IRF540
N-CHANNEL 100V - 0.055 Ω - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.055Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
IRF540 100 V <0.077
Ω
22 A
1
2
3
TO-220
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area. 1) I
SD
≤
22A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12A, V
DD
= 30V
SALES TYPE
MARKING PACKAGE PACKAGING
IRF540 IRF540& TO-220 TUBE
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
100 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
22 A
I
D
Drain Current (continuous) at T
C
= 100°C
15 A
I
DM
(
•)
Drain Current (pulsed) 88 A
P
tot
Total Dissipation at T
C
= 25°C
85 W
Derating Factor 0.57 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 9 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 220 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
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