Ref: CLWLSC2.4 1
WLSC
Wire-bondable vertical Low-profile Si Capacitors down to 100 μm
Rev 2.4
Key features
• Ultra low profile 100 μm.
• Low leakage current.
• High stability (temperature and voltage).
• Negligible capacitance loss through aging.
• Compatible with standard wire bonding assembly
(ball and wedge).
(please refer to our Assembly Application Note for more details)
Key applications
• Any demanding applications such as radar, wireless
infrastructure communication, data broadcasting…
• Standard wire bonding approach (top & bottom gold
metallization), thanks to a perfect pad flatness.
• Decoupling / DC noise and harmonic filtering / Matching
networks (e.g: GaN power amplifier, LDMOS).
• High reliability applications.
• Downsizing. Low profile applications (100 μm).
• Fully compatible with single layer ceramic capacitors and
Metal Oxide Semiconductor.
The WLSC (100 μm thick) capacitors target RF High Power applications for wireless communication (e.g: 5G),
radar and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network,
and harmonic / noise filtering functions. The unique technology of integrated passive devices in silicon developed
by Murata Integrated Passive Solutions, can solve most of the problems encountered in demanding applications.
These Si capacitors in ultra–deep trenches have been developed with a semiconductor process which enables the
integration of high capacitance density from 1.55 nF/mm² to 250 nF/mm² (with a breakdown voltage of respectively
450 V to 11 V).
Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies
- thanks to a full control of the production process with high temperature curing (above 900°C) generating a
highly pure oxide. This technology provides industry-leading performance particularly in terms of capacitor
stability over the full operating DC voltage & temperature range. In addition, intrinsic properties of the silicon
show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This
Silicon based technology is ROHS compliant.
参考文献:CLWLSC2.4
低至100 μm的线键合垂直低轮廓硅电容器
牧师2.4
关键特性
超低规格100 μm。
漏电流小。
高稳定性(温度和电压)。
老化造成的电容损耗可忽略不计。
与标准的线键合组件(球和楔)兼容。
(详情请参阅我们的装配应用说明)
关键应用程序
任何要求苛刻的应用，如雷达，无线基础设施通信
，数据广播…
标准的金属丝粘合方法(顶部和底部的黄金金属化)，
由于完美的焊盘平整度。
去耦/直流噪声和谐波滤波/匹配网络(例如:GaN功率放
大器，LDMOS)。
高可靠性应用。
裁员。低轮廓应用(100 μm)。
与单层陶瓷电容器和金属氧化物半导体完全兼容。
WLSC (100 μ m厚)电容器针对无线通信(例如5G)，雷达和数据广播系统的RF高功率应用。WLSC电容器适用于直流去耦、匹
配网络、
以及谐波/噪声滤波功能。形成了独特的硅基集成无源器件技术
通过村田集成无源解决方案，可以解决在苛刻的应用中遇到的大多数问题。这些超深沟槽中的硅电容器采用半导体工艺开
发，可实现高电容密度的集成，从1.55 nF/mm²到250 nF/mm²(击穿电压分别为)
450v至11v)。
我们的SiCap技术具有高可靠性，比其他电容器技术高出10倍，这要归功于对生产过程的完全控制，高温固化(900°C以上)产
生高纯度的氧化物。这项技术提供了行业领先的性能，特别是在全工作直流电压和温度范围内的电容器稳定性方面。此外
，硅的本征性质表现为低介电吸收和低至零的压电效应，导致无记忆效应。这种基于硅的技术符合ROHS标准。
翻译仅供参考，如需更准确的信息，请参考英文版
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