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高速双二极管

开关二极管

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高速共阴极开关二极管，正向导通电压为0.7V。

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DATA SHEET

Product speciﬁcation

Supersedes data of 1997 Nov 24

1999 May 05

DISCRETE SEMICONDUCTORS

BAV70

High-speed double diode

ook, halfpage

M3D088

1999 May 05 2

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 70 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching in thick and

thin-film circuits.

DESCRIPTION

The BAV70 consists of two

high-speed switching diodes with

common cathodes, fabricated in

planar technology, and encapsulated

in the small SOT23 plastic SMD

package.

PINNING

PIN DESCRIPTION

1 anode (a1)

2 anode (a2)

3 common cathode

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.

handbook, halfpage

Top view

MAM383

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

RRM

repetitive peak reverse voltage − 85 V

continuous reverse voltage − 75 V

continuous forward current single diode loaded; note 1;

see Fig.2

− 215 mA

double diode loaded; note 1;

see Fig.2

− 125 mA

FRM

repetitive peak forward current − 450 mA

FSM

non-repetitive peak forward current square wave; T

=25°C prior to

surge; see Fig.4

t=1µs − 4A

t=1ms − 1A

t=1s − 0.5 A

tot

total power dissipation T

amb

=25°C; note 1 − 250 mW

stg

storage temperature −65 +150 °C

junction temperature − 150 °C

1999 May 05 3

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

forward voltage see Fig.3

= 1 mA 715 mV

= 10 mA 855 mV

=50mA 1 V

= 150 mA 1.25 V

reverse current see Fig.5

=25V 30 nA

=75V 2.5 µA

=25V; T

= 150 °C60 µA

=75V; T

= 150 °C 100 µA

diode capacitance f = 1 MHz; V

= 0; see Fig.6 1.5 pF

reverse recovery time when switched from I

= 10 mA to

= 10 mA; R

= 100 Ω;

measured at I

= 1 mA; see Fig.7

4ns

forward recovery voltage when switched from I

= 10 mA;

= 20 ns; see Fig.8

1.75 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-tp

thermal resistance from junction to tie-point 360 K/W

th j-a

thermal resistance from junction to ambient note 1 500 K/W

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