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MOSFET Modeling & BSIM3 User's Guide,英文版,程玉华,胡正明著
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集成电路数字和模拟设计行业采用的最精确的模型 BSIM3V3,用户指导手册,可用于HSPICE,模拟电路,的基于物理的深亚微米MOSFET 模型,适用于数字和模拟电路设计,由Berkeley 加州大学的器件组开发
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MOSFET MODELING &
BSIM3 USER’S GUIDE
MOSFET MODELING &
BSIM3 USER’S GUIDE
by
Yuhua Cheng
Conexant Systems, Inc.
and
Chenming Hu
University of California, Berkeley
KLUWER ACADEMIC PUBLISHERS
NEW YORK, BOSTON ,
DORDRECHT
,
LONDON
,
MOSCOW
©2002 Kluwer Academic Publishers
New York, Boston, Dordrecht, London, Moscow
All rights reserved
No part of this eBook may be reproduced or transmitted in any form or by any means, electronic,
mechanical, recording, or otherwise, without written consent from the Publisher
Created in the United States of America
Visit Kluwer Online at: http://www.kluweronline.com
and Kluwer's eBookstore at: http://www.ebooks.kluweronline.com
Print ISBN
0-792-38575-6
eBook ISBN
0-306-47050-0
Contents
Contents
..................................................................................................
v
Preface
....................................................................................................
xiii
Chapter 1
Introduction
......................................................................
1
1.1
Compact MOSFET Modeling for Circuit Simulation
....................................
1
1.2
The Trends of Compact MOSFET Modeling
.......................................................
5
1.2.1
Modeling new physical effects
................................................................................
5
1.2.2
High frequency (HF) analog compact models
........................................................
6
1.2.3
Simulation robustness and efficiency
...............................................................
7
1.2.4
Model standardization
........................................................................................
8
References
....................................................................................................
8
Chapter 2
Significant Physical Effects In Modern MOSFETs
...
13
2.1
MOSFET Classification and Operation
.......................................................
13
2.1.1 Strong inversion region (Vgs>Vth)
..................................................................
17
2.1.2
Weak and moderate inversion or the subthreshold region
..............................
18
2.2
Effects Impacting the Threshold Voltage
.....................................................
18
2.2.1
Non-uniform doping effects
..............................................................................
19
2.2.2 Normal short channel effects
...........................................................................
23
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