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NXP 74VHC(T)125 datasheet
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2014-01-17
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Datasheet for NXP 74VHC(T)125 logic gate
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1. General description
The 74VHC125; 74VHCT125 are high-speed Si-gate CMOS devices and are pin
compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with
JEDEC standard JESD7-A.
The 74VHC125; 74VHCT125 provides four non-inverting buffer/line drivers with 3-state
outputs. The 3-state outputs (nY) are controlled by the output enable input (nOE). A HIGH
at nOE causes the outputs to assume a high-impedance OFF-state.
The 74VHC125; 74VHCT125 are identical to the 74VHC126; 74VHCT126 but have active
LOW enable inputs.
2. Features
n Balanced propagation delays
n All inputs have a Schmitt-trigger action
n Inputs accepts voltages higher than V
CC
n Input levels:
u The 74VHC125 operates with CMOS logic levels
u The 74VHCT125 operates with TTL logic levels
n ESD protection:
u HBM JESD22-A114E exceeds 2000 V
u MM JESD22-A115-A exceeds 200 V
u CDM JESD22-C101C exceeds 1000 V
n Multiple package options
n Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Ordering information
74VHC125; 74VHCT125
Quad buffer/line driver; 3-state
Rev. 02 — 13 October 2009 Product data sheet
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74VHC125D −40 °C to +125 °C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
SOT108-1
74VHCT125D
74VHC125PW −40 °C to +125 °C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
74VHCT125PW
74VHC125BQ −40 °C to +125 °C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5 × 3 × 0.85 mm
SOT762-1
74VHCT125BQ
74VHC_VHCT125_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 October 2009 2 of 15
NXP Semiconductors
74VHC125; 74VHCT125
Quad buffer/line driver; 3-state
4. Functional diagram
5. Pinning information
5.1 Pinning
Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one buffer)
mna228
1A 1Y
2
1
3
1OE
2A 2Y
5
4
6
2OE
3A 3Y
9
10
8
3OE
4A 4Y
12
13
11
4OE
mna229
1
EN1
1
3
2
4
6
5
10
8
9
13
11
12
mna227
nOE
nA
nY
(1) The die substrate is attached to this pad using
conductive die attach material. It can not be used as a
supply pin or input.
Fig 4. Pin configuration SO14 and TSSOP14 Fig 5. Pin configuration DHVQFN14
74VHC125
74VHCT125
1OE V
CC
1A 4OE
1Y 4A
2OE 4Y
2A 3OE
2Y 3A
GND 3Y
001aak044
1
2
3
4
5
6
7
8
10
9
12
11
14
13
001aak045
74VHC125
74VHCT125
Transparent top view
2Y 3A
2A 3OE
2OE 4Y
1Y 4A
1A 4OE
GND
3Y
1OE
V
CC
6 9
5 10
4 11
3 12
2 13
7
8
1
14
terminal 1
index area
GND
(1)
74VHC_VHCT125_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 October 2009 3 of 15
NXP Semiconductors
74VHC125; 74VHCT125
Quad buffer/line driver; 3-state
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] P
tot
derates linearly with 8 mW/K above 70 °C.
[3] P
tot
derates linearly with 5.5 mW/K above 60 °C.
[4] P
tot
derates linearly with 4.5 mW/K above 60 °C.
Table 2. Pin description
Symbol Pin Description
1
OE, 2OE, 3OE, 4OE 1, 4, 10, 13 output enable input (active LOW)
1A, 2A, 3A, 4A 2, 5, 9, 12 data input
1Y, 2Y, 3Y, 4Y 3, 6, 8, 11 data output
GND 7 ground (0 V)
V
CC
14 supply voltage
Table 3. Function table
[1]
Control Input Output
nOE nA nY
LLL
HH
HXZ
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
V
I
input voltage −0.5 +7.0 V
I
IK
input clamping current V
I
< −0.5 V
[1]
−20 - mA
I
OK
output clamping current V
O
< −0.5 V or V
O
>V
CC
+ 0.5 V
[1]
- ±20 mA
I
O
output current V
O
= −0.5 V to (V
CC
+ 0.5 V) - ±25 mA
I
CC
supply current - 75 mA
I
GND
ground current −75 - mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
SO14 package
[2]
- 500 mW
TSSOP14 package
[3]
- 500 mW
DHVQFN14 package
[4]
- 500 mW
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