- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 900 V
Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 2,5 3,0 3,5 V
Zero Gate Voltage Drain Current I DSS VDS=900V Tch=25°C 10 500 μA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nA
Drain Source On-State Resistance R DS(on) ID=2,5A VGS=10V 2,0 2,8 W
Forward Transconductance g fs ID=2,5A VDS=25V 3,0 6,0 S
Input Capacitance C iss VDS=25V 1200 1800 pF
Output Capacitance C oss VGS=0V 120 180 pF
Reverse Transfer Capacitance C rss f=1MHz 40 60 pF
Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 25 40 ns
t r ID=5A 25 40 ns
Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 85 130 ns
t f RGS=10 W 45 70 ns
Avalanche Capability I AV L = 100μH Tch=25°C 5 A
Continous Reverse Drain Current I DR 5 A
Pulsed Reverse Drain Current I DRM 20 A
Diode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 0,93 1,4 V
Reverse Recovery Time t rr IF=IDR VGS=0V 400 ns
Reverse Recovery Charge Q rr -dIF/dt=100A/μs Tch=25°C 1,5 μC
